M29W400FB55N3E vs M29W400FB55N3F Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W400FB55N3E disebabkan oleh Micron Technology dan M29W400FB55N3F disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29W400FB55N3E M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E ✓ Aktif
Micron Technology
M29W400FB55N3F M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F ✓ Aktif

Pengandingan Spesifikasi

Parametr M29W400FB55N3E M29W400FB55N3F
Merek Micron Technology Micron Technology
Kategori EEPROM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan NOR Flash (parallel) NOR Flash
Density 4 Mbit (4194 kbits) —
Organisasi 512K x 8 bit / 256K x 16 bit 512K x8 / 256K x16
Access Time 55 ns 55 ns
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V
Antaramuka Parallel, 8-bit/16-bit (BYTE# selectable) Parallel (asynchronous)
Block Architecture 19 memory blocks, 1 boot block (bottom, FB) Boot block with hardware sector protection
Programming Time 10 us per byte/word typical —
Boot Block Hardware Protection Yes —
Suhu Operasi -40C to +125C [DATA_NEEDED: operating temperature range]
Kemasan 48-TSOP I, 12 x 20 mm 48-pin TSOP I (12 x 20 mm)
Pins 48 —
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tray Tape & Reel (TR)
Status RoHS Compliant —
Speed Grades in Family 55 ns, 70 ns —
Saiz Ingatan — 4 Mbit
Program/Erase Supply — Single 2.7 V to 3.6 V
Byte/Word Select — BYTE# pin
Program Suspend/Erase Suspend — Supported
Lead-Free / RoHS — Yes (F suffix = lead-free RoHS-compliant)
Endurance — [DATA_NEEDED: program/erase cycles per block]
Data Retention — [DATA_NEEDED: retention years]

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