M29W400FB55N3E vs M29W400FB55N3F 比較

詳細並排比較 M29W400FB55N3E 由 Micron Technology 與 M29W400FB55N3F 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29W400FB55N3E M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E ✓ 啟用中
Micron Technology
M29W400FB55N3F M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F ✓ 啟用中

規格比較

參數 M29W400FB55N3E M29W400FB55N3F
品牌 Micron Technology Micron Technology
類別 EEPROM Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 NOR Flash (parallel) NOR Flash
Density 4 Mbit (4194 kbits) —
組織 512K x 8 bit / 256K x 16 bit 512K x8 / 256K x16
Access Time 55 ns 55 ns
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V
介面 Parallel, 8-bit/16-bit (BYTE# selectable) Parallel (asynchronous)
Block Architecture 19 memory blocks, 1 boot block (bottom, FB) Boot block with hardware sector protection
Programming Time 10 us per byte/word typical —
Boot Block Hardware Protection Yes —
工作溫度 -40C to +125C [DATA_NEEDED: operating temperature range]
封裝 48-TSOP I, 12 x 20 mm 48-pin TSOP I (12 x 20 mm)
Pins 48 —
安裝類型 Surface Mount Surface Mount
Packaging Tray Tape & Reel (TR)
RoHS 狀態 Compliant —
Speed Grades in Family 55 ns, 70 ns —
記憶體容量 — 4 Mbit
Program/Erase Supply — Single 2.7 V to 3.6 V
Byte/Word Select — BYTE# pin
Program Suspend/Erase Suspend — Supported
Lead-Free / RoHS — Yes (F suffix = lead-free RoHS-compliant)
Endurance — [DATA_NEEDED: program/erase cycles per block]
Data Retention — [DATA_NEEDED: retention years]

資料表與資源

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