MMA1250EGR2 vs MMA1260EGR2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MMA1250EGR2 disebabkan oleh NXP Semiconductors dan MMA1260EGR2 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MMA1250EGR2 MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP

MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP

MMA1250EGR2 ⚠ Bahagian terakhir untuk beli

Pengandingan Spesifikasi

Parametr MMA1250EGR2 MMA1260EGR2
Merek NXP Semiconductors NXP Semiconductors
Kategori Motion Sensors Motion Sensors
Status Lingkungan Hidup Masa Terakhir Dibeli NRND
Jenis Sensus Accelerometer Accelerometer
Axis Z (perpendicular to package top) —
Full-Scale Range ±5 g —
Jenis Output Analog, ratiometric Analog voltage (ratiometric)
Bandwidth 50 Hz (internal 2-pole low-pass filter) 50 Hz (2-pole low-pass filter)
Sensitivity [DATA_NEEDED: sensitivity in mV/g] 1140 mV/g to 1260 mV/g
Zero-g Output Approximately Vdd/2 (ratiometric) —
Tegangan Pemberi Arus 5.0 V nominal (per legacy MMA1250 datasheet typical conditions) 5.0 V (nominal)
Arus Pemberi Arus [DATA_NEEDED: quiescent current in mA] [DATA_NEEDED: typical supply current]
Suhu Operasi -40 C to +85 C (industrial grade) [DATA_NEEDED: operating temperature range]
Kemasan 16-SOIC (SOP-16), surface mount 16-pin SOIC (SOG)
Jenis Pemasangan Surface Mount Surface Mount
Sensor Technology Micromachined silicon capacitive —
Internal Features Signal conditioning, 2-pole low-pass filter, temperature compensation, self-test —
Status RoHS [DATA_NEEDED: confirm per NXP product page] Compliant (per distributor listings)
Sensing Axis — Z
Acceleration Range — ±1.55 g
Output at 0 g — 2.5 V (nominal, ratiometric)
Self-Test — Yes (electrostatic force activation)
Zero-g Offset Drift — [DATA_NEEDED: zero-g offset over temperature]

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