MMA1250EGR2 vs MMA1260EGR2 比較
詳細並排比較 MMA1250EGR2 由 NXP Semiconductors 與 MMA1260EGR2 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MMA1250EGR2 | MMA1260EGR2 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | Motion Sensors | Motion Sensors |
| 生命週期狀態 | 最後購買 | NRND |
| 感測器類型 | Accelerometer | Accelerometer |
| Axis | Z (perpendicular to package top) | — |
| Full-Scale Range | ±5 g | — |
| 輸出類型 | Analog, ratiometric | Analog voltage (ratiometric) |
| Bandwidth | 50 Hz (internal 2-pole low-pass filter) | 50 Hz (2-pole low-pass filter) |
| Sensitivity | [DATA_NEEDED: sensitivity in mV/g] | 1140 mV/g to 1260 mV/g |
| Zero-g Output | Approximately Vdd/2 (ratiometric) | — |
| 供應電壓 | 5.0 V nominal (per legacy MMA1250 datasheet typical conditions) | 5.0 V (nominal) |
| 供應電流 | [DATA_NEEDED: quiescent current in mA] | [DATA_NEEDED: typical supply current] |
| 工作溫度 | -40 C to +85 C (industrial grade) | [DATA_NEEDED: operating temperature range] |
| 封裝 | 16-SOIC (SOP-16), surface mount | 16-pin SOIC (SOG) |
| 安裝類型 | Surface Mount | Surface Mount |
| Sensor Technology | Micromachined silicon capacitive | — |
| Internal Features | Signal conditioning, 2-pole low-pass filter, temperature compensation, self-test | — |
| RoHS 狀態 | [DATA_NEEDED: confirm per NXP product page] | Compliant (per distributor listings) |
| Sensing Axis | — | Z |
| Acceleration Range | — | ±1.55 g |
| Output at 0 g | — | 2.5 V (nominal, ratiometric) |
| Self-Test | — | Yes (electrostatic force activation) |
| Zero-g Offset Drift | — | [DATA_NEEDED: zero-g offset over temperature] |