MT40A1G8WE-075E vs K4A8G165WB-BIWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A1G8WE-075E disebabkan oleh Micron Technology dan K4A8G165WB-BIWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MT40A1G8WE-075E | K4A8G165WB-BIWE |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit (1G x 8) | — |
| Kadar Data | 2666 MT/s (1.33 GHz) | 3200 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply | 2.5V (-125mV, +250mV) | — |
| Operating Temperature (TC) | -40°C to +105°C (industrial) | — |
| Refresh Time (8192 cycles) | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Kemasan | 78-ball FBGA (8x12mm) | 96-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| I/O Type | 1.2V pseudo-open-drain | — |
| VREFDQ | On-die, internal, adjustable | — |
| Burst Length | 8 and 4 | 8, 16 |
| Latensi CAS | Programmable | [DATA_NEEDED: CAS Latency] |
| Status RoHS | Compliant | — |
| AEC-Q100 | Optional (AIT variant) | — |
| Density | — | 8 Gb |
| Organisasi | — | 512M x 16 |
| Tegangan Pemberi Arus | — | 1.2 V |
| Suhu Operasi | — | -40°C to +95°C |
| Antaramuka | — | Parallel |
| Refresh | — | Auto-refresh, Self-refresh |
| On-Die Termination | — | Yes |
| RoHS | — | Compliant |
| Bilangan Pin | — | 96 |