NT5CB256M16CP-DI vs NT5CB256M16CP-DII Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5CB256M16CP-DI disebabkan oleh Nanya Technology dan NT5CB256M16CP-DII disebabkan oleh Nanya Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | NT5CB256M16CP-DI | NT5CB256M16CP-DII |
|---|---|---|
| Merek | Nanya Technology | Nanya Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Organisasi | 256M x 16 | 256M x 16 |
| Density | 4 Gb | 4Gb |
| Tegangan Pemberi Arus | 1.35 V (DDR3L) | — |
| Kadar Data | 1600 Mbps/pin (max) | DDR3L-1600 (PC3L-12800) |
| Kemasan | TFBGA-96 | 96-ball FBGA (9mm x 13mm) |
| Number of Banks | 8 | 8 |
| CAS Latency (CL) | 5, 6, 7, 8, 9, 10, 11 | — |
| Write Latency (CWL) | 5, 6, 7, 8, 9 | — |
| Additive Latency | 0-13 | — |
| Gambaran Suhu Operasi | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | -40C to +95C (industrial) |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Differential Clock Input | Yes (CK, CK#) | — |
| On-Die Termination (ODT) | Yes | — |
| Supply Voltage (VDD) | — | 1.35V (1.283V to 1.45V) |
| I/O Voltage (VDDQ) | — | 1.35V (1.283V to 1.45V) |
| Latensi CAS | — | CL11 |
| tCK (min) | — | 1.25 ns |
| Burst Length | — | 8, 4 (with burst chop) |
| Antaramuka | — | SSTL-15 |
| Refresh Interval | — | 7.8us at 85C, 3.9us at 95C |