NT5CB256M16CP-DI vs NT5CB256M16CP-DII Comparison

Detailed side-by-side comparison of NT5CB256M16CP-DI by Nanya Technology and NT5CB256M16CP-DII by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nanya Technology
NT5CB256M16CP-DI NT5CB256M16CP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CB256M16CP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CB256M16CP-DI ✓ Active
Nanya Technology
NT5CB256M16CP-DII NT5CB256M16CP-DII - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CB256M16CP-DII - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CB256M16CP-DII ✓ Active

Specification Comparison

Parameter NT5CB256M16CP-DI NT5CB256M16CP-DII
Brand Nanya Technology Nanya Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Memory Type DDR3L SDRAM DDR3L SDRAM
Organization 256M x 16 256M x 16
Density 4 Gb 4Gb
Supply Voltage 1.35 V (DDR3L) —
Data Rate 1600 Mbps/pin (max) DDR3L-1600 (PC3L-12800)
Package TFBGA-96 96-ball FBGA (9mm x 13mm)
Number of Banks 8 8
CAS Latency (CL) 5, 6, 7, 8, 9, 10, 11 —
Write Latency (CWL) 5, 6, 7, 8, 9 —
Additive Latency 0-13 —
Operating Temperature Range -40°C to +95°C (industrial), -40°C to +105°C (automotive) -40C to +95C (industrial)
RoHS Compliant Compliant
Lead-Free Yes —
Differential Clock Input Yes (CK, CK#) —
On-Die Termination (ODT) Yes —
Supply Voltage (VDD) — 1.35V (1.283V to 1.45V)
I/O Voltage (VDDQ) — 1.35V (1.283V to 1.45V)
CAS Latency — CL11
tCK (min) — 1.25 ns
Burst Length — 8, 4 (with burst chop)
Interface — SSTL-15
Refresh Interval — 7.8us at 85C, 3.9us at 95C

Datasheets & Resources

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