NT5CB256M16CP-DI vs NT5CB256M16CP-DII Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CB256M16CP-DI sa pamamagitan ng Nanya Technology at NT5CB256M16CP-DII sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | NT5CB256M16CP-DI | NT5CB256M16CP-DII |
|---|---|---|
| Brand | Nanya Technology | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Organisasyon | 256M x 16 | 256M x 16 |
| Density | 4 Gb | 4Gb |
| Volte ng Pagbibigay | 1.35 V (DDR3L) | — |
| Rate ng Data | 1600 Mbps/pin (max) | DDR3L-1600 (PC3L-12800) |
| Packhaging | TFBGA-96 | 96-ball FBGA (9mm x 13mm) |
| Number of Banks | 8 | 8 |
| CAS Latency (CL) | 5, 6, 7, 8, 9, 10, 11 | — |
| Write Latency (CWL) | 5, 6, 7, 8, 9 | — |
| Additive Latency | 0-13 | — |
| Hanay ng Temperature na Operasyon | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | -40C to +95C (industrial) |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Differential Clock Input | Yes (CK, CK#) | — |
| On-Die Termination (ODT) | Yes | — |
| Supply Voltage (VDD) | — | 1.35V (1.283V to 1.45V) |
| I/O Voltage (VDDQ) | — | 1.35V (1.283V to 1.45V) |
| Latensya ng CAS | — | CL11 |
| tCK (min) | — | 1.25 ns |
| Burst Length | — | 8, 4 (with burst chop) |
| Interface | — | SSTL-15 |
| Refresh Interval | — | 7.8us at 85C, 3.9us at 95C |