NT5CC256M16CP-DIB vs K4B4G1646D-BYK0 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5CC256M16CP-DIB disebabkan oleh Nanya Technology dan K4B4G1646D-BYK0 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Nanya Technology
NT5CC256M16CP-DIB - 4Gb DDR3L SDRAM 256Mx16 | Nanya Technology
NT5CC256M16CP-DIB ✓ AktifPengandingan Spesifikasi
| Parametr | NT5CC256M16CP-DIB | K4B4G1646D-BYK0 |
|---|---|---|
| Merek | Nanya Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gbit |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35V | 1.35 V (1.5 V compatible) |
| Kadar Data | 1600 Mbps (DDR3L-1600) | 1600 Mbps (PC3-12800) |
| Kemasan | TFBGA-96 (9x13mm, 0.8mm pitch) | 96-ball FBGA |
| Number of Terminals | 96 | — |
| Internal Banks | 8 | — |
| Refresh Cycles | 8192 | — |
| CAS Latency (CL) | 5, 6, 7, 8, 9 | — |
| Write Latency (CWL) | 5, 6, 7, 8, 9 | — |
| Temperature Grade | Industrial (-40°C to +95°C) | — |
| RoHS | Compliant | — |
| Boson Bebas | Yes | — |
| Package Shape | Rectangular | — |
| Suhu Operasi | — | 0°C to 85°C |
| Latensi CAS | — | Programmable (e.g., 11, 10, 9) |
| Burst Length | — | 8 (with burst chop 4) |
| On-Die Termination | — | Yes |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| RoHS Compliant | — | Yes |
| Bilangan Pin | — | 96 |
| Die Revision | — | D-die |