NTMFS4C324NT1G vs BSC010NE2LSIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NTMFS4C324NT1G disebabkan oleh onsemi dan BSC010NE2LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | NTMFS4C324NT1G | BSC010NE2LSIATMA1 |
|---|---|---|
| Merek | onsemi | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | onsemi | Infineon Technologies |
| Part Number | NTMFS4C324NT1G | — |
| Technology | TRENCH 6 N-Channel MOSFET | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max value] | — |
| Continuous Drain Current (ID) at Tc | 136 A | — |
| Continuous Drain Current (ID) at Ta | 30 A | — |
| Pulsed Drain Current (IDM) | 352 A | — |
| Rds(on) at VGS=10V | 1.7 mΩ typical | — |
| Single Pulse Avalanche Energy (EAS) | 549 mJ | — |
| Power Dissipation at Ta | 3.1 W | — |
| Power Dissipation at Tc | 64 W | — |
| Kemasan | 5-DFN (5x6 mm), SO-8FL equivalent | PG-TDSON-8-7 (TDSON-8 EP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | [DATA_NEEDED: Tj max value] | -55C to +150C (TJ) |
| Status RoHS | Compliant | Compliant |
| Tape and Reel Quantity | 1500 pcs | — |
| Series / Family | — | OptiMOS 25V |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 96 W |
| Configuration | — | Single N-Channel |
| Kiraan Pin | — | 8 |
| Gate Drive | — | Logic-level compatible |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |
| Rds(on) at 10V | — | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | — | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |