NTMFS4C324NT1G vs BSC010NE2LSIATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng NTMFS4C324NT1G sa pamamagitan ng onsemi at BSC010NE2LSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

onsemi
NTMFS4C324NT1G NTMFS4C324NT1G - 30V N-Ch Trench MOSFET, 1.7mΩ | onsemi

NTMFS4C324NT1G - 30V N-Ch Trench MOSFET, 1.7mΩ | onsemi

NTMFS4C324NT1G ✓ Nakahanda
Infineon
BSC010NE2LSIATMA1 BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon

BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon

BSC010NE2LSIATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro NTMFS4C324NT1G BSC010NE2LSIATMA1
Brand onsemi Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer onsemi Infineon Technologies
Part Number NTMFS4C324NT1G —
Technology TRENCH 6 N-Channel MOSFET OptiMOS (Trench)
Drain-Source Voltage (VDS) 30 V 25 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max value] —
Continuous Drain Current (ID) at Tc 136 A —
Continuous Drain Current (ID) at Ta 30 A —
Pulsed Drain Current (IDM) 352 A —
Rds(on) at VGS=10V 1.7 mΩ typical —
Single Pulse Avalanche Energy (EAS) 549 mJ —
Power Dissipation at Ta 3.1 W —
Power Dissipation at Tc 64 W —
Packhaging 5-DFN (5x6 mm), SO-8FL equivalent PG-TDSON-8-7 (TDSON-8 EP)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon [DATA_NEEDED: Tj max value] -55C to +150C (TJ)
Tindminan RoHS Compliant Compliant
Tape and Reel Quantity 1500 pcs —
Series / Family — OptiMOS 25V
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TA — 38 A
Continuous Drain Current (ID) at TC — 100 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 96 W
Configuration — Single N-Channel
Bilang ng Pin — 8
Gate Drive — Logic-level compatible
Level ng MSL — [DATA_NEEDED: MSL rating]
Rds(on) at 10V — [DATA_NEEDED: Rds(on) at VGS=10V]
Rds(on) at 4.5V — [DATA_NEEDED: Rds(on) at VGS=4.5V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]

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