SS0530 vs BSS126H6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci SS0530 disebabkan oleh Panjit dan BSS126H6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr SS0530 BSS126H6327XTSA2
Merek Panjit Infineon
Kategori Diodes MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Panjit International Inc. —
Part Number SS0530 (ordering code SS0530_R1_00001) —
Device Type Schottky Barrier Diode —
Configuration Single Single
Kemasan SOD-123 SOT-23-3 (PG-SOT23)
Jenis Pemasangan Surface Mount Surface Mount
Maximum Repetitive Peak Reverse Voltage (VRRM) 30 V —
Maximum DC Blocking Voltage (VR) 30 V —
Maximum Average Rectified Forward Current (IF(AV)) 0.5 A —
Non-Repetitive Peak Forward Surge Current (IFSM) 5.0 A —
Forward Voltage Drop (Vf) [DATA_NEEDED: Vf at rated IF] —
Reverse Leakage Current (IR) [DATA_NEEDED: IR at rated VR] —
Gambaran Suhu Hubungan Operasi -55 C to +150 C (typical for SOD-123 Schottky, verify per datasheet) —
Storage Temperature Range -55 C to +150 C (typical) —
Diode Family / Part Series SS0520-SS0540 (Low-Vf Schottky) —
Status RoHS Compliant (Pb-free matte tin finish) Compliant
Packaging Tape and Reel (R1) —
FET Type — N-Channel Depletion Mode
Drain-Source Voltage (VDS) Max — 600 V
Continuous Drain Current (ID) at Ta — 21 mA
Power Dissipation (PD) at Ta — 500 mW
On-Resistance (RDS(on)) Max — 500 ohm (typical for depletion-mode)
Gate-Source Voltage (VGS) Range — [DATA_NEEDED: VGS max/min]
Technology — SIPMOS (DMOS)
Gambaran Suhu Operasi — -55C to +150C (junction, typical)
Kiraan Pin — 3
Channel Mode — Depletion (normally-on at VGS = 0)
Aras MSL — 1 (per JEDEC J-STD-020)
Lead-Free — Yes
Boson Bebas — Yes (Infineon 'green' package)

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