SS0530 vs BSS126H6327XTSA2 比較
詳細並排比較 SS0530 由 Panjit 與 BSS126H6327XTSA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | SS0530 | BSS126H6327XTSA2 |
|---|---|---|
| 品牌 | Panjit | Infineon |
| 類別 | Diodes | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Panjit International Inc. | — |
| Part Number | SS0530 (ordering code SS0530_R1_00001) | — |
| Device Type | Schottky Barrier Diode | — |
| Configuration | Single | Single |
| 封裝 | SOD-123 | SOT-23-3 (PG-SOT23) |
| 安裝類型 | Surface Mount | Surface Mount |
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 30 V | — |
| Maximum DC Blocking Voltage (VR) | 30 V | — |
| Maximum Average Rectified Forward Current (IF(AV)) | 0.5 A | — |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 5.0 A | — |
| Forward Voltage Drop (Vf) | [DATA_NEEDED: Vf at rated IF] | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: IR at rated VR] | — |
| 工作接面溫度範圍 | -55 C to +150 C (typical for SOD-123 Schottky, verify per datasheet) | — |
| Storage Temperature Range | -55 C to +150 C (typical) | — |
| Diode Family / Part Series | SS0520-SS0540 (Low-Vf Schottky) | — |
| RoHS 狀態 | Compliant (Pb-free matte tin finish) | Compliant |
| Packaging | Tape and Reel (R1) | — |
| FET Type | — | N-Channel Depletion Mode |
| Drain-Source Voltage (VDS) Max | — | 600 V |
| Continuous Drain Current (ID) at Ta | — | 21 mA |
| Power Dissipation (PD) at Ta | — | 500 mW |
| On-Resistance (RDS(on)) Max | — | 500 ohm (typical for depletion-mode) |
| Gate-Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max/min] |
| Technology | — | SIPMOS (DMOS) |
| 工作溫度範圍 | — | -55C to +150C (junction, typical) |
| 腳位數 | — | 3 |
| Channel Mode | — | Depletion (normally-on at VGS = 0) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes (Infineon 'green' package) |