STF13N95K3 vs IPN95R1K2P7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci STF13N95K3 disebabkan oleh STMicroelectronics dan IPN95R1K2P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr STF13N95K3 IPN95R1K2P7ATMA1
Merek STMicroelectronics Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Breakdown Voltage (BVdss) 950 V —
Continuous Drain Current (ID) at 25°C 13 A —
Continuous Drain Current (ID) at 100°C 8.2 A —
Pulsed Drain Current (IDM) 39 A —
On-Resistance (RDS(on)) at VGS=10V 0.55 ohm (typical) —
Gate-Source Threshold Voltage (VGS(th)) 3 V to 5 V —
Gate Charge (Qg) 45 nC —
Input Capacitance (Ciss) 1900 pF —
Output Capacitance (Coss) 120 pF —
Reverse Transfer Capacitance (Crss) 10 pF —
Avalanche Energy (EAS) 400 mJ —
Gambaran Suhu Operasi -55°C to +150°C -55C to +150C
Kemasan TO-220FP SOT-223-3 (PG-SOT223)
Jenis Pemasangan Through Hole Surface Mount
Status RoHS Compliant Compliant
Boson Bebas Yes —
FET Type — N-Channel
Technology — CoolMOS P7 (Super Junction)
Drain-to-Source Voltage (V_DSS) — 950 V
Continuous Drain Current (I_D) at T_C — 6 A
Maximum On-Resistance R_DS(on) at V_GS=10V — 1200 mOhm (1.2 Ohm)
Gate Drive Voltage (max R_DS(on)) — 10 V
Power Dissipation (T_C) — 7 W
Kiraan Pin — 3 (2 + Tab)
Series — CoolMOS P7
Packaging — Tape & Reel
Part Status — Active

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga