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K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung K4B4G1646E-BCNB by Samsung Electronics - elektronik bileşen
Samsung Electronics

K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung

MPN: K4B4G1646E-BCNB ✓ Aktif
1.35 V (1.283 V to 1.45 V) Vdss 96-ball FBGA Package DDR3 SDRAM Memory
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Veri Sayfasını Görüntüle (PDF) Alternatifleri Görüntüle

K4B4G1646E-BCNB Genel Bakış

The Samsung K4B4G1646E-BCNB is a 4Gb DDR3 SDRAM organized as 256Mx16, operating at 1.35V (low voltage) with a data rate of 1866 Mbps. It is ideal for mobile and embedded applications requiring high bandwidth and low power consumption. The device is housed in a 96-ball FBGA package and is RoHS compliant.

Drop-in alternatifler için K4B4G1646E-BCNB — aynı paket, pin-başına uyumlu. PCB yeniden montajı gerektiren farklı paket bileşenleri dışlanmıştır.

Bu Serideki Variantlar

Yedek parça uyumlu olan aynı serideki modeller K4B4G1646E-BCNB (aynı form faktörü ve ayağa oturma) — farklı olan Package, Memory Type, Operating Temperature, Supply Voltage, Burst Length.

Samsung Electronics
Package: 96-FBGA
Supply Voltage: 1.5 V (DDR3L variants 1.35 V)
İle Karşılaştır K4B4G1646E-BCNB →
Samsung Electronics
Package: 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)
Memory Type: DDR3L SDRAM
Operating Temperature: 0°C to +95°C (TC)
İle Karşılaştır K4B4G1646E-BCNB →

MT41K256M16TW-107

Micron Technology
DDR3L SDRAM · 4 Gbit · 256M x 16 · Parallel · 933 MHz (DDR3L-1866) · 20 ns · 1.35 V · 16 bit

Fiyat için iletişime geçin

Veri Şablonunu Görüntüle →

H5TQ4G63AFR-H9C

SK hynix
DDR3 SDRAM · 4 Gb · 256M x 16 · 1.5 V · 0.255 ns · 96-ball TFBGA · RECTANGULAR · 8192

Fiyat için iletişime geçin

Veri Şablonunu Görüntüle →

IS43TR16256A-15HBL-TR

ISSI, Integrated Silicon Solution Inc
DDR3 SDRAM · 4 Gbit · 256M x 16 · 667 MHz · 1333 Mbps · 20 ns · 1.5 V · 96-TWBGA (9x13 mm)

Fiyat için iletişime geçin

Veri Şablonunu Görüntüle →

W632GU6NB

Winbond DDR3 4Gb 256Mx16

📋 Katalogda Olmayan Referans Alternatifi

AS4C256M16D3L-12BCN

Alliance Memory
DDR3L SDRAM · 4 Gbit · 256M x 16 · 16 bit · 800 MHz · 1600 Mbps · 20 ns · 1.35 V

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K4B4G1646E-BCNB Maksimum Değerlendirmeler & Elektriksel Özellikler

Bellek Türü DDR3 SDRAM
Bellek Boyutu 4 Gb
Organizasyon 256M x 16
Besleme Gerilimi 1.35 V (1.283 V to 1.45 V)
Veri Hızı 1866 Mbps
İşletim Sıcaklığı 0C to +95C
Paket 96-ball FBGA
Montaj Türü Surface Mount
RoHS Durumu Compliant
Pin Sayısı 96
Arayüz Türü Parallel
Refresh 8K / 64 ms
Burst Length 8, 4 (fixed)

K4B4G1646E-BCNB Pin Yapısı

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin A1 VDD — Power supply (1.35V)
Pin A2 DQ0 — Data I/O 0
Pin A3 DQ1 — Data I/O 1
Pin B1 VSS — Ground
Pin B2 DQ2 — Data I/O 2
Pin B3 DQ3 — Data I/O 3
Pin C1 VDDQ — DQ power supply
Pin C2 DQS0 — Data strobe 0 (positive)
Pin C3 DQS0# — Data strobe 0 (negative)
Pin D1 VSS — Ground
Pin D2 CLK — Clock input
Pin D3 CLK# — Complementary clock input
Pin E1 CKE — Clock enable
Pin E2 CS# — Chip select
Pin E3 RAS# — Row address strobe
Pin F1 CAS# — Column address strobe
Pin F2 WE# — Write enable
Pin F3 BA0 — Bank address 0
Pin G1 BA1 — Bank address 1
Pin G2 A0 — Address input 0
Pin G3 A1 — Address input 1

Tipik Uygulamalar

K4B4G1646E-BCNB için uygundur 6 uygulamas: Mobile Computing, Embedded Systems, Networking Equipment, Consumer Electronics, Automotive Infotainment, Industrial Automation.

📱

Mobile Computing

Used in laptops and tablets for main memory with low power consumption.

🏭

Embedded Systems

Ideal for industrial single-board computers and IoT gateways.

🌐

Networking Equipment

Used in routers, switches, and network appliances for packet buffering.

📺

Consumer Electronics

Found in smart TVs, set-top boxes, and gaming consoles.

🚗

Automotive Infotainment

Used in car infotainment systems and navigation units.

🏭

Industrial Automation

Deployed in PLCs and HMI panels for data logging and display.

What is the supply voltage range for K4B4G1646E-BCNB?
The supply voltage is 1.35V nominal, with a range of 1.283V to 1.45V for low-voltage DDR3 operation.
What is the maximum data rate of this DDR3 SDRAM?
The K4B4G1646E-BCNB supports a data rate of 1866 Mbps per pin.
What is the memory organization of K4B4G1646E-BCNB?
It is organized as 256M words x 16 bits, totaling 4 Gb.
What package does K4B4G1646E-BCNB come in?
It is housed in a 96-ball FBGA (Fine-pitch Ball Grid Array) package.
Is K4B4G1646E-BCNB RoHS compliant?
Yes, the device is RoHS compliant.
What is the operating temperature range?
The operating temperature range is 0°C to +95°C (case temperature).
Can K4B4G1646E-BCNB be used in mobile applications?
Yes, its low voltage (1.35V) and high density make it suitable for mobile and embedded applications.
What is the difference between DDR3 and DDR3L?
DDR3L operates at 1.35V, while standard DDR3 operates at 1.5V. K4B4G1646E-BCNB is a DDR3L device.
Does K4B4G1646E-BCNB support ECC?
No, this is a non-ECC memory. ECC versions are typically x72 organizations.
What is the burst length supported?
It supports burst lengths of 8 and 4 (fixed).
What is the refresh requirement?
It requires 8K refresh cycles every 64 ms.
Is K4B4G1646E-BCNB compatible with DDR3 sockets?
Yes, it is pin-compatible with standard DDR3 sockets, but voltage levels must match.
What is the typical power consumption?
[DATA_NEEDED: Typical power consumption] Please refer to the datasheet for detailed power numbers.
What is the part number suffix meaning?
The suffix 'E' indicates the generation, 'B' indicates package type (FBGA), 'CNB' indicates speed and temperature grade.
Where can I find the full datasheet?
The datasheet is available on Samsung's semiconductor website at the provided URL.
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