AIKB50N65DF5ATMA1 - 650V 50A TRENCHSTOP 5 IGBT | Infineon
MPN: AIKB50N65DF5ATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.92 | $4.92 |
| 10 | $4.43 | $44.30 |
| 100 | $3.94 | $394.00 |
| 500 | $3.46 | $1,730.00 |
| 1,000 | $3.08 | $3,080.00 |
AIKB50N65DF5ATMA1 Overview
An IGBT (Insulated-Gate Bipolar Transistor) is a power semiconductor that combines the high-input impedance of a MOSFET with the low-saturation-voltage drop of a bipolar transistor, enabling efficient switching at high voltages and currents. It sits in the power-semiconductor hierarchy alongside MOSFETs and sits downstream of gate drivers and upstream of the inductive load it commutates. IGBTs are the workhorse of mid-voltage (400 V to 1700 V), high-current (10 A to 3600 A) power conversion.
Key features of the AIKB50N65DF5ATMA1 include 650 V collector-emitter breakdown voltage, 50 A nominal collector current, very low VCE(sat) for reduced conduction loss, and a co-packaged RAPID-1 soft fast-recovery diode optimized for low EMI and high dv/dt immunity. The TRENCHSTOP 5 thin-wafer technology shrinks switching losses by roughly 20 percent versus previous TRENCHSTOP generations, and the part is qualified to AEC-Q101 for automotive use.
The thin-wafer TRENCHSTOP 5 cell architecture replaces the older NPT field-stop concept with a smaller die that reduces both Eon and Eoff per switching cycle. The integrated RAPID-1 diode is matched to the IGBT's switching speed, suppressing reverse-recovery spikes and lowering electromagnetic emissions in hard-switched bridges such as totem-pole PFC.
Typical applications include on-board chargers for electric vehicles, automotive and industrial PFC stages, totem-pole PFC and bridgeless boost converters, DC/AC inverters for motor drives, photovoltaic string and micro-inverters, and uninterruptible power supplies. The 650 V class rating suits 400 V DC-link designs common in EV powertrains and three-phase industrial drives.
When designing with this part, observe the datasheet's maximum case temperature, keep the gate-drive loop inductance below the recommended limit (typically below 20 nH) and choose a turn-off gate resistor that balances Eoff against dv/dt-induced ringing. The D2PAK footprint requires sufficient PCB copper area for thermal dissipation at full load.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and application-focused design notes not found in the standalone Infineon datasheet.
Drop-in alternatives for AIKB50N65DF5ATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
AIKB50N65DF5
β Drop-Inπ Reference alternative (not in catalog)
AIKBN50N65DF5
β Drop-Inπ Reference alternative (not in catalog)
IPB65R095CFD7ATMA1
β Drop-Inπ Reference alternative (not in catalog)
AIKB50N65DF5ATMA1 Maximum Ratings & Electrical Characteristics
| Collector-Emitter Voltage (VCE) | 650 V |
| Nominal Collector Current (IC, TC=100C) | 50 A |
| Technology | TRENCHSTOP 5 IGBT with RAPID-1 anti-parallel diode |
| IGBT Type | NPT (Non-Punch-Through) |
| Co-packaged Diode | Yes - fast-recovery anti-parallel (RAPID-1 family) |
| Power Dissipation (Ptot) | 305 W |
| Operating Junction Temperature | -40C to +175C |
| Package | PG-TO263-3-2 (D2PAK-3, surface mount) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
| Gate Drive Voltage (recommended) | +/-15 V |
AIKB50N65DF5ATMA1 Pin Configuration
| Pin 1 | Gate β Gate control input; drive with +/-15 V via gate resistor |
| Pin 2 | Collector β Collector terminal; also tied to the exposed metal tab on the back of the D2PAK package |
| Pin 3 | Emitter β Emitter terminal; connect to low-side return of gate driver |
| Pin TAB | Collector (thermal pad) β Exposed metal back tab internally connected to Collector; must be soldered to PCB copper pour for thermal dissipation |
Forward-Bias Safe Operating Area
Typical Applications
AIKB50N65DF5ATMA1 is suitable for 6 applications: On-Board EV Charger (OBC) PFC Stage, Industrial PFC and Boost Converter, DC/AC Inverter for Motor Drives, Photovoltaic String Inverter, Uninterruptible Power Supply (UPS), Welding and Induction Heating Inverter.
On-Board EV Charger (OBC) PFC Stage
The AIKB50N65DF5ATMA1 fits the bridgeless totem-pole PFC front-end of a 3.3 kW to 11 kW on-board EV charger thanks to its 650 V collector-emitter rating, which comfortably covers a 400 V DC-link, and its 50 A nominal collector current that delivers 5 kW of handled power per switch at 100 C case. The co-packaged RAPID-1 fast-recovery anti-parallel diode suppresses reverse-recovery spikes that would otherwise cause severe EMI in unbridged topologies, eliminating the need for an external SiC diode and shrinking the magnetic footprint. AEC-Q101 qualification gives automotive OBC designers the long-term reliability data they need for warranty-critical EV electronics.
Recommended
Industrial PFC and Boost Converter
In a 5 kW to 10 kW industrial power-factor-correction stage fed from a 230 V or 380 V AC mains, the AIKB50N65DF5ATMA1 sustains a 400 V to 450 V DC-link output at switching frequencies of 16 kHz to 40 kHz with very low conduction loss. TRENCHSTOP 5 technology delivers approximately 20 percent lower Ets than the previous TRENCHSTOP 4 generation, which directly improves full-load efficiency by 0.3 to 0.5 percentage points. The D2PAK surface-mount package simplifies automated assembly versus TO-247 alternatives and supports reflow soldering, lowering manufacturing cost for high-volume industrial SMPS.
Recommended
DC/AC Inverter for Motor Drives
The AIKB50N65DF5ATMA1 is well-suited as the low-side switch in 400 V three-phase variable-frequency drives for industrial pumps, fans, and compressors up to about 15 kW. Its 650 V rating tolerates DC-bus transients and reflected back-EMF spikes, while the 50 A continuous current and 305 W dissipation rating handle the locked-rotor inrush without thermal shutdown. The co-packaged RAPID-1 diode eliminates the need for an external freewheeling diode in the inverter leg, reducing parasitic inductance and improving reverse-recovery behavior under hard-switching commutation.
Recommended
Photovoltaic String Inverter
In residential and small-commercial PV string inverters operating from a 600 V to 1000 V DC string voltage, the AIKB50N65DF5ATMA1 anchors the HERIC or H6 transformerless inverter topology with a 650 V breakdown margin that easily tolerates a 1000 V max Voc input. The 50 A current rating supports up to 10 kW per inverter leg at typical 96 to 98 percent peak efficiency. TRENCHSTOP 5 switching losses remain low enough that an aluminum heatsink of roughly 4 square centimeters per switch is sufficient, allowing a slim inverter chassis design preferred for wall-mounted residential products.
Recommended
Uninterruptible Power Supply (UPS)
In a 5 kW to 20 kW online double-conversion UPS, the AIKB50N65DF5ATMA1 acts as the inverter-stage switch converting the 384 V DC battery rail back to 230 V AC mains. The 650 V breakdown voltage leaves 250 V of headroom against the DC-link, while the 50 A continuous rating handles the half-cycle peak currents of a 230 V/16 A output. The TRENCHSTOP 5 thin-wafer architecture keeps switching losses low at the 16 kHz to 25 kHz frequencies typical of UPS designs, supporting a quiet-running product without forced air cooling in some configurations.
Recommended
Welding and Induction Heating Inverter
In a resonant zero-voltage-switching (ZVS) full-bridge inverter for induction heating or small welding machines up to 10 kW, the AIKB50N65DF5ATMA1 handles the 400 V DC-bus resonant load with low Eoff because the TRENCHSTOP 5 tail-current profile is matched to ZVS timing. The 50 A rating supports the resonant tank current of an induction-heating coil, and the PG-TO263-3-2 package enables a planar magnetic layout on a single-sided PCB. AEC-Q101 qualification also makes the part attractive for the harsher thermal-cycling environment inside a portable welder enclosure.
Recommended
Recommended Products Summary
Engineering reference data for AIKB50N65DF5ATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IKW50N65DF5 | AIKB50N65DF5 | AIKBN50N65DF5 | STGWA50N65DM2 | IPB65R095CFD7ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | Infineon Technologies |
| Package | PG-TO263-3-2 (D2PAK) | TO-247-3 (through-hole) | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | TO-247-3 (through-hole) | PG-TO263-3 (D2PAK) - same |
| Collector-Emitter Voltage | 650 V | 650 V | 650 V | 650 V | 650 V | 650 V |
| Nominal Collector/Drain Current | 50 A | 50 A | 50 A | 50 A | 50 A | 30 A (MOSFET) |
| Device Technology | TRENCHSTOP 5 IGBT + RAPID-1 diode | TRENCHSTOP 5 IGBT + RAPID-1 diode | TRENCHSTOP 5 IGBT + RAPID-1 diode | TRENCHSTOP 5 IGBT + RAPID-1 diode | MDmesh DM2 super-junction MOSFET (no diode) | CoolMOS CFD7 super-junction MOSFET |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified | AEC-Q101 qualified | AEC-Q101 qualified | Industrial grade | AEC-Q101 qualified |
| Co-packaged Diode | Yes (RAPID-1 fast-recovery) | Yes (RAPID-1 fast-recovery) | Yes (RAPID-1 fast-recovery) | Yes (RAPID-1 fast-recovery) | No (MOSFET body diode only) | No (MOSFET body diode only) |
Key Differentiators
- Co-packaged RAPID-1 fast-recovery diode eliminated external diode in totem-pole PFC (vs STGWA50N65DM2)
- Surface-mount D2PAK package supports automated reflow assembly (vs IKW50N65DF5)
- AEC-Q101 automotive qualification with TRENCHSTOP 5 efficiency (vs IPB65R095CFD7ATMA1)
Design Notes
Estimated: at full 50 A continuous current, VCE(sat) around 1.6 V, and a switching frequency of 20 kHz, the AIKB50N65DF5ATMA1 dissipates approximately 80 W conduction plus switching losses. The PG-TO263-3-2 D2PAK package requires a copper-pour heatsink of at least 6 to 10 square centimeters on the top layer plus thermal vias to the bottom layer; without sufficient copper area, junction temperature will exceed the 175 C limit. Mount on the largest available copper island and use multiple thermal vias (at least 9 to 16 vias of 0.3 mm diameter) directly under the exposed tab for an effective theta_JA below 40 C/W.
Minimize the gate-drive loop inductance by placing the gate resistor, gate driver, and IGBT gate pin within a tight loop of less than 20 nH total parasitic inductance. Long gate traces cause excessive ringing, overshoot, and potentially false turn-on from Miller-induced dv/dt. Place a 10 kohm pull-down resistor between gate and emitter directly at the IGBT pins to hold the device off during power-up before the gate driver asserts a defined state. Use a Kelvin emitter connection if available - some D2PAK footprints benefit from a separate emitter-sense trace tied to pin 3 rather than the power emitter pad.
Do not operate the AIKB50N65DF5ATMA1 above the 650 V VCE rating even briefly - avalanche breakdown is destructive in IGBTs. Add a TVS clamp or active snubber sized at 80 percent of VCE(max) for inductive-load switching. Do not parallel multiple AIKB50N65DF5ATMA1 devices without external gate-source resistors on each part; IGBTs share poorly because VCE(sat) has a positive temperature coefficient that fights natural current balancing. Finally, never leave the gate floating during power transitions - a floating gate can pick up noise and partially turn on the device, causing shoot-through.
Compliance Information
AEC-Q101 (automotive discrete) qualified per Infineon AIK part-numbering convention; RoHS and REACH compliant; lead-free reflow-compatible; halogen-free per Infineon product environmental documentation.
