BSP171IATMA1 - P-CH 60V 1.9A SOT-223 MOSFET | Infineon
MPN: BSP171IATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.12 | $1.12 |
| 10 | $0.92 | $9.20 |
| 100 | $0.71 | $71.00 |
| 500 | $0.55 | $275.00 |
| 1,000 | $0.42 | $420.00 |
| 3,000 | $0.34 | $1,020.00 |
BSP171IATMA1 Overview
A P-channel MOSFET (P-FET) is a type of field-effect transistor in which the channel is doped to conduct via holes rather than electrons. P-FETs simplify high-side switching because the gate can be driven relative to ground (no charge pump needed for basic on/off), making them the standard choice for load switches and power-ORing in battery-powered and 12 V/24 V systems. Within the broader hierarchy, P-FETs sit under MOSFETs -> transistors -> discrete semiconductors -> active components.
Key features include a low threshold voltage for direct 3.3 V/5 V logic-level gate drive, low on-state resistance per unit area for a SOT-223 footprint, and a thermally efficient tab pin that doubles as a heat-spreader for surface-mount assembly. The 4-pin SOT-223 (3 source/drain pins + tab tied to drain) provides a Kelvin-friendly land pattern with low parasitic source inductance.
The BSP171IATMA1 uses Infineon's SIPMOS small-signal process, an industry-proven planar P-channel technology optimized for low gate charge and robust avalanche energy. The combination of -60 V VDS and modest gate charge Qg supports PWM frequencies above 100 kHz in compact DC-DC and motor-driver designs.
Typical applications include load switching in USB Type-C power delivery, high-side switches for industrial sensor rails, reverse-battery protection in 12 V/24 V systems, motor-driver H-bridges, and battery management charge/discharge paths. Designers also use it for level shifting and power-ORing between redundant supplies.
When designing with this device, gate-drive resistor selection (typ. 100 ohm) and gate-source pull-down (typ. 100 kohm) prevent unwanted turn-on during supply transients. The SOT-223 tab must be soldered to a copper pad of at least 50 mm^2 to stay within the 1.8 W Ta rating.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for BSP171IATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BSP170P
β Drop-Inπ Reference alternative (not in catalog)
NTF6P02T3G
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FDD4141
β Drop-Inπ Reference alternative (not in catalog)
BSP171P
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
AO3401A
β Drop-Inπ Reference alternative (not in catalog)
BSP171IATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | P-Channel |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) at TA=25C | 1.9 A |
| Continuous Drain Current (ID) at TC=25C | 3.2 A |
| Power Dissipation (PD) at TA=25C | 1.8 W |
| Power Dissipation (PD) at TC=25C | 5 W |
| Package | PG-SOT223-4-U01 (SOT-223, 3+Tab) |
| Mounting Type | Surface Mount |
| Technology | SIPMOS (planar P-channel) |
| Gate Drive | Logic-level (Vgs(th) compatible with 3.3 V / 5 V) |
| Operating Temperature | -55 C to +150 C (junction) |
| RoHS Status | Compliant |
| Pin Count | 4 (3 leads + tab) |
| Polarity | P-Channel (enhancement mode) |
| Tab Connection | Internally connected to drain |
BSP171IATMA1 Pin Configuration
| Pin 1 | Gate β Gate drive input; logic-level compatible with 3.3 V / 5 V |
| Pin 2 | Drain β Drain terminal; also internally connected to tab (pin 4) |
| Pin 3 | Source β Source terminal; connect to battery/system positive for high-side switch |
| Pin 4 | Tab (Drain) β Thermal tab electrically tied to drain; solder to PCB copper pour |
Safe Operating Area (DC)
Typical Applications
BSP171IATMA1 is suitable for 7 applications: USB Type-C VBUS Load Switch, Reverse-Battery Protection (12V/24V Automotive), Industrial 24V Sensor Power Switch, Battery Management Charge/Discharge Path, DC Motor H-Bridge High-Side Switch, Power OR-ing for Redundant Supplies, Level Shifter and Signal Inversion.
USB Type-C VBUS Load Switch
The BSP171IATMA1's -60 V VDS, 1.9 A continuous ID, and logic-level gate drive make it a strong fit for USB Type-C VBUS load switching at 5 V/9 V profiles. The -60 V rating far exceeds the 20 V USB-PD envelope, leaving margin for hot-plug transients and ESD coupling. Place the source on the system 5 V rail, the drain on the VBUS output, and drive the gate directly from a Type-C controller GPIO - no gate-driver IC needed. The SOT-223 tab carries away the modest dissipation (typ. 0.1 W at 3 A) without external heatsinking. Compared to an N-FET high-side switch, this P-FET topology eliminates the charge pump and reduces BOM cost by one IC.
Recommended
Reverse-Battery Protection (12V/24V Automotive)
The BSP171IATMA1 is a textbook choice for 12 V and 24 V reverse-battery protection. Wire the source to the battery positive, the drain to the downstream load, and tie the gate to ground through a 100 kohm pull-down. During normal operation VGS is approximately -Vbatt and the FET is fully on. When the battery is reversed, VGS becomes positive, the FET turns off, and the load is disconnected in microseconds. The -60 V VDS withstands 24 V load-dump transients (per ISO 7637-2) with ample margin. The SOT-223 footprint keeps the protection circuit under 30 mm^2, suitable for placement near the battery terminal or in-line within the harness.
Recommended
Industrial 24V Sensor Power Switch
Industrial 4-20 mA loop sensors, 24 V proximity switches, and PLC digital outputs benefit from the BSP171IATMA1's high-side switching capability. The -60 V VDS rating covers 24 V industrial bus transients up to 36 V (per IEC 61131-2), while 1.9 A continuous ID can power multi-sensor strings, solenoid drivers, or small relay coils. Logic-level gate drive allows direct interface to 3.3 V/5 V PLC logic or microcontroller GPIO without a gate-driver. The SOT-223 package supports conformal-coated PCBs and operates across the -40 C to +85 C industrial temperature range without derating beyond the published curves.
Recommended
Battery Management Charge/Discharge Path
In single-cell Li-ion and 2-3 cell battery packs, the BSP171IATMA1 serves as the low-side protection switch in conjunction with a dedicated battery management IC. Its low RDS(on) at VGS=-4.5 V minimizes conduction loss during high-current discharge, while the -60 V rating provides margin against charger miswiring and inductive kick from motor loads. Use it for power tools, e-bike battery packs, and portable medical devices where moderate current (1-2 A) and high reliability are required. The SOT-223 footprint also supports automated optical inspection (AOI) on high-volume production lines.
Recommended
DC Motor H-Bridge High-Side Switch
The BSP171IATMA1 can be paired with an N-channel MOSFET to form a half-bridge that drives small DC motors up to 1.5 A continuous in H-bridge or forward-converter topologies. As a high-side switch, the P-FET simplifies gate drive (no bootstrap capacitor needed) and eliminates the shoot-through risk that complicates all-N-FET half-bridges. The 1.8 W power dissipation budget supports motors in the 3-12 V range. Use the gate-source 100 kohm pull-down to ensure fast turn-off during PWM transitions, and add a 100 ohm gate resistor to control ringing on long motor leads.
Recommended
Power OR-ing for Redundant Supplies
The BSP171IATMA1 is well-suited to redundant-supply OR-ing in telecom and industrial systems where two DC sources must power a load without back-feeding each other. Connect source of each P-FET to its supply rail and tie the drains together at the load; the P-FET with the higher rail voltage conducts while the other is reverse-biased and off. The -60 V rating covers 48 V telecom rails, and the 1.9 A ID handles typical 12-24 V distribution currents. Add a small Schottky diode across source-drain if the load is highly capacitive, to prevent body-diode conduction during switch-over.
Recommended
Level Shifter and Signal Inversion
Although less common than dedicated level-shifter ICs, the BSP171IATMA1 can perform simple logic-level translation from 3.3 V to 5 V (or vice versa) when translation speed is non-critical (under 1 MHz). Tie the gate to the lower-voltage rail through a pull-down, the source to the higher-voltage rail, and the drain (with a 10 kohm pull-up to the higher rail) becomes the translated output. This discrete approach costs less than a dedicated translator IC for simple GPIO bridges in cost-sensitive consumer products. The -60 V rating provides immunity to supply noise and ESD on the high-voltage rail.
Recommended
Recommended Products Summary
Engineering reference data for BSP171IATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSP170P | NTF6P02T3G | FDD4141 | AO3401A |
|---|---|---|---|---|---|
| Package | SOT-223 (PG-SOT223-4-U01) | SOT-223 - same | SOT-223 - same | SOT-223 - same | SOT-23 - different |
| Brand | Infineon | Infineon - same | onsemi | onsemi | Alpha & Omega Semiconductor |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -60 V | -60 V | -60 V | -60 V | -30 V |
| Continuous Drain Current (ID) | 1.9 A (Ta=25C) | 1.5 A | 2.3 A | 2.0 A | 4.0 A |
| Power Dissipation (PD) | 1.8 W (Ta) / 5 W (Tc) | 1.8 W (Ta) | 2.0 W (Ta) | 1.6 W (Ta) | 1.4 W |
| Gate Drive | Logic-level (3.3V / 5V) | Logic-level | Logic-level | Logic-level | Logic-level |
| Technology | SIPMOS (planar P-channel) | SIPMOS | Trench P-channel | Trench P-channel | Trench P-channel |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Logic-level gate drive with -60 V VDS in SOT-223 (vs AO3401A)
- Proven Infineon SIPMOS process technology (vs NTF6P02T3G)
- SOT-223 thermal performance at -60 V (vs FDD4141)
Design Notes
Estimated: at 1.5 A continuous drain current and RDS(on) of approximately 0.25 ohm (VGS=-10 V, TJ=25 C), conduction loss is ~0.56 W. The SOT-223 package has a junction-to-ambient thermal resistance of approximately 80 C/W on a standard JEDEC test board (1 oz copper, 100 mm^2), giving a junction temperature rise of 45 C above ambient at full 1.5 A load. For reliable operation above 1 A continuous, solder the tab to at least 50 mm^2 of copper. Reducing ambient temperature or improving airflow extends the safe operating current to the rated 1.9 A (TA).
Always include a gate-source pull-down resistor (typically 100 kohm) on the BSP171IATMA1 to prevent unwanted turn-on from Miller coupling or supply transients. Without the pull-down, a high dV/dt on the drain can inject charge through Cgd and momentarily raise VGS above the threshold, causing partial turn-on and shoot-through in H-bridge configurations. Place a 100 ohm gate resistor in series to dampen LC ringing from gate-source capacitance and PCB trace inductance.
Use a Kelvin source connection if switching speeds exceed 100 kHz or currents exceed 1 A. The SOT-223 source pin and the tab pin are internally connected, but tying the gate return to the source pin (not the tab) avoids including the tab-to-source bond wire inductance in the gate-drive loop. For the drain, connect the load directly to the tab to minimize parasitic inductance in the high-current path. A four-layer board with a solid ground plane beneath the FET dramatically improves thermal and EMI performance.
Estimated: PCB layout recommendations for the BSP171IATMA1 follow standard SOT-223 best practices. Minimize the gate-drive loop area to less than 25 mm^2 by placing the gate resistor adjacent to the gate pin. Use 1 oz copper on the top layer for the tab thermal pad and stitch 0.3 mm thermal vias on a 1.2 mm grid to the inner ground plane. This via array can reduce theta-JA from ~80 C/W to ~35 C/W, effectively tripling the safe continuous current at the same temperature rise.
Compliance Information
RoHS and lead-free confirmed by all major distributors; halogen-free status not explicitly stated in distributor data and marked unknown. Not AEC-Q100 qualified - select an automotive-grade P-FET if AEC-Q100 is required.
