FDS8884 - 30V 8.5A N-Channel PowerTrench MOSFET | onsemi
MPN: FDS8884 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.62 | $0.62 |
| 10 | $0.52 | $5.20 |
| 100 | $0.38 | $38.00 |
| 500 | $0.31 | $155.00 |
| 1,000 | $0.26 | $260.00 |
FDS8884 Overview
An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts when a positive gate-source voltage is applied. Within the power management hierarchy, MOSFETs sit under discrete power semiconductors and serve as the primary switching elements in voltage regulators, motor drivers, and load switches. PowerTrench devices are onsemi's flagship trench-gate MOSFET technology, engineered to minimize conduction and switching losses simultaneously.
The FDS8884's headline feature set includes low on-resistance of 23 mOhm, which reduces conduction losses (I^2 x RDS(on)); low gate charge, which reduces gate-drive losses at high switching frequencies; and fast switching speed, which shortens transition intervals in PWM converters. The device is rated for 2.5W power dissipation at TA in the 8-SOIC package. These characteristics make it especially well suited for synchronous buck converter applications where it can serve as the control FET or synchronous rectifier.
Architecturally, PowerTrench technology uses a vertical trench-gate structure that packs more channel density per die area than planar designs, lowering RDS(on) x area figure-of-merit. The optimized charge balance also reduces Qgd, limiting Miller plateau duration and shoot-through risk in half-bridge topologies.
Typical applications include synchronous and conventional PWM DC/DC converters, point-of-load power supplies, notebook and desktop VRM circuits, and general-purpose load switching in industrial and consumer electronics.
Design consideration: verify gate drive voltage against the datasheet RDS(on) test condition, since on-resistance rises at reduced VGS; also ensure SOIC-8 thermal copper pour for dissipations approaching the 2.5W rating.
This page synthesizes distributor availability, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for FDS8884 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
FDS8858A
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
FDS8958A
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
FDS8884
β Drop-Inβ In Stock
$0.26 / Unit
View Datasheet βSi4946EY
β Drop-Inπ Reference alternative (not in catalog)
FDS8884 Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Technology | PowerTrench |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 8.5 A (Ta) |
| On-Resistance (RDS(on)) | 23 mOhm |
| Power Dissipation (PD) | 2.5 W (Ta) |
| Package | 8-SOIC |
| Mounting Type | Surface Mount |
| Configuration | Single N-Channel |
| Switching Speed | Fast (optimized for PWM switching) |
| Application Focus | DC/DC converters, synchronous or conventional PWM |
| RoHS Status | Compliant |
| Manufacturer Status | Fairchild design, manufactured by onsemi |
FDS8884 Pin Configuration
| Pin 1 | Source β Source terminal (connected internally to pins 2 and 3) |
| Pin 2 | Source β Source terminal |
| Pin 3 | Source β Source terminal (three source pins reduce lead resistance) |
| Pin 4 | Gate β Gate terminal, voltage-controlled input |
| Pin 5 | Drain β Drain terminal (connected internally to pins 6, 7, 8) |
| Pin 6 | Drain β Drain terminal |
| Pin 7 | Drain β Drain terminal |
| Pin 8 | Drain β Drain terminal (drain connected to die attach / tab area) |
Safe Operating Area (8-SOIC, TA = 25C)
Typical Applications
FDS8884 is suitable for 6 applications: Synchronous Buck DC/DC Converters, Point-of-Load Power Supplies, Motor Drive Switching Stages, Battery-Powered System Load Switches, DC Fan and Lighting Driver Circuits, Telecom and Industrial Power Distribution.
Synchronous Buck DC/DC Converters
The FDS8884 was designed specifically to improve overall efficiency of DC/DC converters using synchronous or conventional PWM controllers. In a synchronous buck converter, it can serve as the synchronous rectifier, where its 23 mOhm RDS(on) minimizes conduction loss during the freewheeling interval, or as the control FET, where its low gate charge reduces switching transition loss at hundreds of kHz. Compared with planar MOSFETs, the PowerTrench trench structure lowers the RDS(on) x Qg figure-of-merit, directly improving converter efficiency and reducing heat sink requirements. Designers should verify both top-switch and bottom-switch duty cycles so each devices thermal dissipation stays within the 2.5W SOIC-8 rating.
Recommended
Point-of-Load Power Supplies
In point-of-load (POL) regulators for motherboards, networking cards, and industrial controllers, the FDS8884 provides an efficient low-side switching element for 30V-class rails. Its 8.5A continuous current rating at TA covers typical 5V/12V intermediate-bus POL outputs, and the 23 mOhm on-resistance keeps conduction losses low even at high duty-cycle operation. The SOIC-8 surface-mount package reflows on standard SMT lines and fits dense POL layouts. Estimated: at 8A load, conduction loss is roughly 1.47W, so a modest copper pour under the drain pins keeps junction temperature within limits. Low gate charge also reduces polysilicon driver losses in multi-phase VRM arrays.
Recommended
Motor Drive Switching Stages
The FDS8884 suits low-voltage DC motor drive bridges and PWM speed-control stages in consumer appliances, robotics, and automotive accessories. Its fast switching speed reduces transition losses during high-frequency PWM speed control, minimizing audible noise and improving throttle-linearity, while the 23 mOhm RDS(on) limits heat build-up during stall or high-torque conditions. The 30V rating covers 12V and 24V motor buses with transient headroom. Designers should add free-wheeling protection (body diode conduction in H-bridge topologies or external Schottky devices) and confirm that inrush currents during motor start remain within the devices safe operating area and pulse current rating.
Recommended
Battery-Powered System Load Switches
As a high-side switch paired with a driver or as a low-side load switch, the FDS8884 offers low conduction drop in battery-powered equipment such as portable instruments, power banks, and IoT gateways. With 23 mOhm on-resistance, a 5A switched load sees only about 115 mV drop and 575 mW dissipation, preserving battery runtime versus higher-resistance alternatives. The devices fast switching enables soft-start control via gate RC networks to limit inrush. The 30V rating also accommodates multi-cell lithium stacks. Designers must respect the VGS maximum when driving from logic rails and may add a small P-channel or driver IC for true high-side operation.
Recommended
DC Fan and Lighting Driver Circuits
In 12V and 24V fan speed control, LED string switching, and backlight driver stages, the FDS8884 acts as a PWM chopper switch. Low gate charge allows small, low-cost gate drivers or direct drive from PWM controllers, reducing bill-of-material cost, while 23 mOhm RDS(on) keeps conduction loss negligible for multi-amp loads - estimated: 4A operation dissipates only 368 mW, allowing compact layouts without heatsinking. Fast switching supports PWM frequencies above the audible band (20 kHz+) for silent operation. The SOIC-8 package suits dense driver PCBs. Ensure gate resistors are chosen to balance EMI from fast edges against switching loss.
Recommended
Telecom and Industrial Power Distribution
The FDS8884 functions as a switching and ORing element in 24V telecom and industrial power distribution boards, where its 30V rating provides transient margin on nominal 24V rails. Its low RDS(on) reduces distribution losses in continuously-on paths - estimated: at 6A continuous, dissipation is about 828 mW, well within SOIC-8 capability with a reasonable copper pour. Fast switching also supports hot-swap and inrush-limiting circuits when combined with a controller. Compliance with RoHS and lead-free manufacturing simplifies deployment in EU-market industrial equipment. Verify surge and fault-current exposure against the datasheet pulsed-drain-current and avalanche specifications.
Recommended
Recommended Products Summary
Engineering reference data for FDS8884 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | FDS8858A | FDS8958A | FDS8884 (UMW) | Si4946EY |
|---|---|---|---|---|---|
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Brand | onsemi (Fairchild design) | onsemi | onsemi | Guangdong Youtai Semiconductor (UMW) | Vishay Intertechnology |
| Technology | PowerTrench | PowerTrench | PowerTrench | Trench MOSFET | TrenchFET |
Key Differentiators
- Lowest conduction loss in the comparison set at 23 mOhm RDS(on) (vs FDS8958A)
- Guaranteed second source with identical footprint (vs FDS8884 (UMW))
- PowerTrench low gate charge vs cross-brand TrenchFET (vs Si4946EY)
Design Notes
The FDS8884 is rated 2.5W at TA in the 8-SOIC package, but real thermal performance depends on PCB copper. Estimated: at the full 8.5A rating, conduction dissipation alone is 8.5^2 x 0.023 = 1.66W, leaving little margin for switching losses. Provide at least 0.5-1 square inch of drain-connected copper pour and use thermal vias near the drain pins. For sustained loads above 5-6A at elevated ambient temperature, consider paralleling two FDS8884 devices or moving to an exposed-pad package.
Verify gate drive voltage against the datasheet RDS(on) test condition. The headline 23 mOhm figure is specified at a defined VGS; driving the gate from a 3.3V logic rail will substantially increase on-resistance and conduction loss. Use a dedicated MOSFET driver (e.g., IRS21834-class half-bridge drivers) for PWM converters to ensure the gate fully enhances within the required transition time, and add a small series gate resistor (typically 4.7-10 Ohm) to control ringing and EMI.
Place the FDS8884 so gate and source loops are minimal: route the gate driver output close to pin 4 and return the driver ground directly to pins 1-3 to minimize common-source inductance, which slows switching and can cause spurious turn-on in half-bridge layouts. Keep the high-current drain path (pins 5-8) short and wide, and place input bulk and high-frequency ceramic capacitors within a few millimeters of the converter power loop to suppress voltage spikes during switching transitions.
Compliance Information
RoHS compliance per onsemi product listing for the 8-SOIC package. REACH, halogen-free, and conflict-minerals declarations should be obtained from the onsemi compliance portal.
