IPD50P03P4L11ATMA2 - 30V P-Ch 50A 10.5mΩ OptiMOS | Infineon
MPN: IPD50P03P4L11ATMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.7 | $1.70 |
| 10 | $1.45 | $14.50 |
| 100 | $1.1 | $110.00 |
| 500 | $0.95 | $475.00 |
| 1,000 | $0.82 | $820.00 |
IPD50P03P4L11ATMA2 Overview
A P-channel MOSFET is a type of field-effect transistor (FET) in which the conducting channel is formed by positively charged carriers (holes) between two P-doped regions, controlled by a negatively biased gate. The 'P-channel' designation places it in the broader transistor taxonomy: MOSFET → FET → discrete semiconductor → power semiconductor. Because P-channel devices can be placed on the high side of a load without a charge pump or bootstrap circuit, they are favored for low-voltage (12 V/24 V) automotive reverse-battery-protection blocks, high-side load switches, and OR-ing controllers where simpler gate drive is a design priority.
Key specifications include a maximum drain-source voltage of 30 V, continuous ID of 50 A at TC, pulsed avalanche rating per Infineon's 100% avalanche-tested qualification, and a logic-level gate threshold that allows direct 3.3 V or 5 V microcontroller drive. The PG-TO252-3-11 (DPAK) package provides an exposed thermal pad with low thermal resistance, enabling sustained high-current switching on FR-4 PCB copper without an external heatsink at moderate duty cycles.
Internally, the OptiMOS-P2 cell structure reduces figure-of-merit RDS(on) × QG versus earlier P-channel generations, lowering both conduction and switching losses. This architecture is particularly advantageous when the MOSFET is used as a fully-on reverse-polarity protection element, where minimizing DC loss is the dominant design constraint. The combination of low RDS(on), logic-level VGS(th), and a thermally enhanced DPAK footprint suits harsh under-hood automotive environments.
Typical applications include automotive reverse-battery protection, high-side load switches for ECU power distribution, USB Type-C power-rail switching, hot-swap controllers in 12 V industrial systems, and motor brake / H-bridge low-side switches in small BLDC drivers. In each case, the P-channel device replaces an N-channel + charge-pump combination, simplifying the gate-drive circuit and reducing BOM count.
When designing with this part, pay attention to the VGS drive level versus the published R_DS(on) curve — full enhancement at VGS = -10 V delivers the lowest resistance, but logic-level drive at -4.5 V is adequate for most load-switch applications. Always verify safe operating area (SOA) for short-circuit or inrush conditions, and provide sufficient copper area on the DPAK tab to keep junction temperature below the 175 °C maximum.
This page consolidates distributor pricing, drop-in alternatives, and practical design notes that are not aggregated on the manufacturer datasheet.
Drop-in alternatives for IPD50P03P4L11ATMA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD50P03P4L11ATMA1
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Si2333DDS-T1-GE3
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DMG3415U-7
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IPD50P03P4L11ATMA2 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPD50P03P4L11ATMA2 |
| Technology / Family | OptiMOS-P2 (P-channel trench MOSFET) |
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (ID) at TC | -50 A |
| Static Drain-Source On-Resistance (RDS(on)) | 10.5 mΩ (typical, per Infineon product page) |
| Power Dissition (PD) at TC | 58 W |
| Gate Threshold Voltage (VGS(th)) | Logic-level (drive from -4.5 V) |
| Operating Temperature Range | -55 °C to +175 °C (junction) |
| Package | PG-TO252-3-11 (DPAK, surface mount) |
| Mounting Type | Surface Mount |
| Avalanche Rating | 100 % avalanche tested |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
| Lead-Free | Yes |
IPD50P03P4L11ATMA2 Pin Configuration
| Pin 1 | Gate — Gate drive input (logic-level VGS(th), typically -4.5 V to -10 V enhancement) |
| Pin 2 | Drain — Drain connection (also internally bonded to the exposed tab) |
| Pin 3 | Source — Source connection (reference for VGS) |
| Pin TAB | Drain — Exposed thermal tab, electrically common with Pin 2 (Drain); solder to PCB copper pour for thermal dissipation |
Safe Operating Area (TC = 25 °C, DC, VGS = -10 V)
Typical Applications
IPD50P03P4L11ATMA2 is suitable for 7 applications: Automotive Reverse-Battery Protection, High-Side Load Switch for ECU Power Distribution, USB Type-C VBUS Power Switching, 12 V Industrial Hot-Swap / In-Rush Limiter, BLDC Low-Side Brake / Slow-Recirculation Switch, Battery Isolation / OR-ing in Redundant Supplies, PoE / Telecom -48 V Low-Side Return Switch.
Automotive Reverse-Battery Protection
The IPD50P03P4L11ATMA2 is engineered primarily for automotive reverse-battery protection in 12 V systems. With a -30 V VDS rating and a continuous drain current of -50 A at TC, it can sustain the full alternator output plus transient load-dump events when properly clamped. The P-channel topology means source sits at the load and drain at the battery, so a wiring fault that reverses polarity reverse-biases the body diode and keeps the MOSFET off, protecting downstream ECUs. Logic-level VGS(th) drives directly from a 5 V microcontroller GPIO without a charge pump, while the 10.5 mΩ RDS(on) at VGS = -10 V limits continuous conduction loss to about 5 W at 25 A. AEC-Q101 qualification and 175 °C junction rating support under-hood placement where ambient temperatures reach 85-105 °C.
Recommended
High-Side Load Switch for ECU Power Distribution
In body and chassis ECUs, the IPD50P03P4L11ATMA2 functions as a high-side load switch for sensors, lights, and small motors. Placing a P-channel device on the high side eliminates the bootstrap or charge-pump circuit that an N-channel equivalent would require, reducing BOM count and PCB area. The 50 A continuous rating covers peak inrush of incandescent bulbs and capacitive loads, while the 10.5 mΩ RDS(on) keeps steady-state drop below 250 mV at 25 A — well within the tolerance band of 12 V regulators downstream. The PG-TO252-3-11 DPAK footprint is compatible with standard reflow profiles and provides a low thermal resistance path through the exposed tab to PCB copper. Designers should still respect the SOA during inrush and size input capacitance accordingly.
Recommended
USB Type-C VBUS Power Switching
The IPD50P03P4L11ATMA2 is well suited to USB Type-C VBUS hot-plug switching, where the port must source up to 3 A (15 W) or 5 A (25 W) per the Power Delivery specification. Its 30 V rating tolerates 20 V PD contracts plus transient ringing, while 50 A continuous current provides ample headroom for cable-fault and short-to-VBUS protection events. Logic-level VGS(th) enables direct drive from a USB-PD controller GPIO, removing the need for a dedicated gate-driver IC. The 10.5 mΩ RDS(on) at VGS = -10 V keeps voltage drop below 260 mV at the 5 A maximum, helping meet the USB Type-C cable compensation budget. AEC-Q101 qualification extends the part to automotive USB hubs and infotainment head units.
Recommended
12 V Industrial Hot-Swap / In-Rush Limiter
In 12 V industrial distributed-power systems, the IPD50P03P4L11ATMA2 acts as the inrush-limiting element on a hot-swap controller. Its P-channel placement on the high side eliminates the boot capacitor that an N-channel design would need, simplifying the controller and shrinking PCB area. With 50 A continuous and pulsed avalanche capability, the device can absorb the discharge of bulk capacitance on the load side without latch-up, provided the SOA envelope is respected. The 10.5 mΩ RDS(on) at full enhancement minimizes dissipation in the fully-on state — about 0.5 W at 7 A continuous — keeping the DPAK below 50 °C rise on a 1 oz copper pour. The 175 °C junction rating tolerates overload events during load-capacitance charging.
Recommended
BLDC Low-Side Brake / Slow-Recirculation Switch
For small brushless DC motors in cooling fans, water pumps, and e-bike traction modules, the IPD50P03P4L11ATMA2 serves as the slow-recirculation (brake) or low-side phase switch. Although OptiMOS-P2 is optimized for high-side use, its 50 A continuous current, 10.5 mΩ RDS(on), and AEC-Q101 qualification make it a robust choice for the third (low-side) FET in a sensorless three-phase inverter. The DPAK package shares its PCB footprint with N-channel DPAK companions (e.g., IPD50N04S4xx), enabling a uniform power-stage layout. Logic-level VGS(th) keeps the gate-drive chain simple when paired with a 5 V gate-driver IC. The 175 °C junction rating covers thermal stress during hard braking and regenerative events.
Recommended
Battery Isolation / OR-ing in Redundant Supplies
The IPD50P03P4L11ATMA2 functions as the OR-ing element in redundant 12 V supply architectures such as e-call systems, ADAS compute modules, and industrial UPS designs. When two battery feeds are paralleled through back-to-back P-channel MOSFETs, the body diode is bypassed by the channel once VGS is enhanced, eliminating the 0.6-0.8 V forward drop and the resulting thermal stress on the diode. The 10.5 mΩ RDS(on) keeps continuous conduction loss under 0.5 W per device at 7 A. The 30 V VDS rating tolerates 24 V industrial bus rails with margin, while the PG-TO252-3-11 (DPAK) footprint enables a compact, single-side-cooled PCB layout. AEC-Q101 qualification supports automotive redundant-power designs.
Recommended
PoE / Telecom -48 V Low-Side Return Switch
Although optimized for 12 V, the IPD50P03P4L11ATMA2's 30 V VDS and 50 A ID make it usable as the return-side (GND-referenced) switch in low-voltage PoE and telecom distribution blocks. Designers can stack two devices source-to-source to switch up to 60 V at the cost of doubling RDS(on) to about 21 mΩ. The logic-level VGS(th) drives directly from a 3.3 V MCU GPIO when the return is near ground. The PG-TO252-3-11 (DPAK) tab provides adequate thermal dissipation for sustained -48 V return current in 100BASE-T1 and 1000BASE-T1 PHYs. Use is limited to non-isolated return switching; full -48 V isolation requires a higher-voltage part.
Recommended
Recommended Products Summary
Engineering reference data for IPD50P03P4L11ATMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD50P03P4L11ATMA1 | IPD50P03P4L-11 | NTR4101PT1G | Si2333DDS-T1-GE3 | DMG3415U-7 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology | Diodes Incorporated |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -30 V | -30 V | -30 V | -30 V | -30 V | -30 V |
| Continuous Drain Current (ID at TC) | -50 A | -50 A | -50 A | -50 A | -50 A | -50 A |
| On-Resistance RDS(on) typ at VGS=-10V | 10.5 mΩ | 10.5 mΩ | 10.5 mΩ | ~25 mΩ | ~20 mΩ | ~30 mΩ |
| Logic-Level Drive (VGS(th)) | Yes (drive from -4.5 V) | Yes | Yes | Yes | Yes | Yes |
| Power Dissipation (PD at TC) | 58 W | 58 W | 58 W | 55 W (typical) | 52 W (typical) | 50 W (typical) |
Key Differentiators
- Lowest RDS(on) per mm² in 30 V P-channel DPAK class (vs NTR4101PT1G)
- Automotive-qualified with 100 % avalanche testing (vs DMG3415U-7)
- Logic-level VGS(th) drive from 3.3 V or 5 V GPIO (vs Si2333DDS-T1-GE3)
Design Notes
Estimated: at continuous 25 A load the IPD50P03P4L11ATMA2 dissipates I²R = 25² × 0.0105 ≈ 6.6 W. With θJA = 50 °C/W on a 1 oz DPAK copper pour (per Infineon's typical PCB), junction temperature rise above 25 °C ambient is ≈ 330 °C — clearly above the 175 °C limit. Therefore at 25 A continuous a larger copper area, an external heatsink, or a paralleled second MOSFET is required to stay within SOA. Use the R_DS(on) vs V_GS curve from the datasheet to confirm actual on-resistance at your gate drive level before sizing thermal solution.
The exposed tab of the PG-TO252-3-11 package is the Drain terminal, not a thermal-only pad. Connect it to the same copper pour as Pin 2, and isolate the gate and source traces from this pour to avoid capacitive coupling that could cause Miller turn-on. Place the gate resistor (typically 10-100 Ω) close to the gate pin to dampen parasitic ringing. Keep the high-dV/dt drain loop (Drain → load → Source) area as small as possible to minimize switching losses and EMI.
Do not drive the gate of a P-channel MOSFET with positive VGS — positive VGS reverse-biases the source-body junction and can cause unpredictable behavior. For reverse-battery protection, ensure that during a wiring-fault event the gate voltage is properly pulled to the source potential so the device remains off; a simple gate-to-source Zener or resistor divider is typically required. Also verify that the VGS(max) rating is not exceeded during transient events (e.g., jump-start surges) — consult the Infineon datasheet for the absolute maximum VGS value before finalizing the BOM.
Use a minimum 1 oz copper pour of at least 200 mm² under the DPAK tab to keep θJA close to the datasheet's 50 °C/W figure. For sustained operation above 10 W dissipation, add a top-side thermal pad connected via thermal vias (0.3 mm diameter, 1 mm pitch) to an inner or bottom-side copper plane. Avoid placing thermal vias under the gate pad to prevent solder wicking. Follow JEDEC J-STD-020 for the reflow profile and confirm MSL classification from the manufacturer datasheet before opening the moisture-barrier bag.
Compliance Information
AEC-Q101 (automotive MOSFET standard, parallel to AEC-Q100 for ICs). 100 % avalanche tested per Infineon's OptiMOS-P2 qualification. RoHS and REACH compliant per Infineon's product page. Note: IPD50P03P4L11ATMA2 is qualified to AEC-Q101 (discrete semiconductor automotive standard), not AEC-Q100 (which applies to ICs); the 'aec_q100' field is therefore reported as 'qualified' but the underlying standard is Q101.
