IRF3415STRLPBF - 150V 43A N-Channel HEXFET MOSFET D2PAK | Infineon
MPN: IRF3415STRLPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.1 | $21.00 |
| 100 | $1.75 | $175.00 |
| 500 | $1.48 | $740.00 |
| 1,000 | $1.22 | $1,220.00 |
IRF3415STRLPBF Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch and amplify signals in power electronics. It is a type of discrete semiconductor belonging to the broader hierarchy: MOSFET -> transistor -> discrete semiconductor -> electronic component. N-channel MOSFETs such as the IRF3415STRLPBF conduct current when a positive gate-to-source voltage exceeds the threshold, enabling low-side or high-side switching topologies in DC-DC converters, motor drives, and load switches.
Key features include an ultra-low on-resistance of 42 mOhm at VGS=10V, avalanche-rated single-pulse capability, and a fast switching speed characteristic of the HEXFET fifth-generation process. The D2PAK surface-mount package offers a thermal resistance (junction-to-case) suitable for high-power dissipation, with the tab acting as an integrated heatsink when soldered to a sufficient copper area. Power dissipation is rated at 3.8 W at TA=25C and 200 W at TC=25C, indicating strong thermal performance in continuous-conduction applications.
The fifth-generation HEXFET technology utilizes advanced processing to achieve extremely low on-resistance per silicon area, combining fast switching speed with rugged avalanche-rated operation. This makes the IRF3415STRLPBF an efficient and reliable solution for high-frequency switching power supplies, where low conduction and switching losses directly translate into improved system efficiency and reduced thermal stress.
Typical applications include switch-mode power supplies (SMPS), DC-DC converters, motor control circuits, solenoid drivers, and high-current load switches in industrial and automotive systems. The 150 V rating also makes it suitable for 48 V telecom and e-mobility bus architectures.
When designing with this device, ensure the gate drive voltage reaches at least 10 V for full enhancement and minimum RDS(on). The D2PAK tab must be soldered to a sufficient copper pour area to keep junction temperature within the 175 C maximum rating under worst-case load.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing engineers a one-stop reference for sourcing and substitution decisions.
Drop-in alternatives for IRF3415STRLPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF3415SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRF3415STRRPBF
β Drop-Inπ Reference alternative (not in catalog)
VBL1154N
β Drop-Inπ Reference alternative (not in catalog)
IRF3415STRLPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | HEXFET (IR MOSFET, fifth generation) |
| Drain-to-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at Tc=25C | 43 A |
| Pulsed Drain Current (IDM) | 170 A |
| On-Resistance RDS(on) max at VGS=10V | 42 mOhm |
| Gate-to-Source Voltage (VGS) max | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | 133.3 nC |
| Power Dissipation (PD) at Ta=25C | 3.8 W |
| Power Dissipation (PD) at Tc=25C | 200 W |
| Operating Junction Temperature | -55C to +175C |
| Package | D2PAK (TO-263-3, TO-263AB) |
| Mounting Type | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix) |
| Packaging | Tape & Reel (STRL) |
| Avalanche Rated | Yes |
IRF3415STRLPBF Pin Configuration
| Pin 1 | Gate β MOSFET gate input (drive to 10 V for full enhancement) |
| Pin 2 | Drain (Tab) β Drain connection; internally bonded to the metal tab for thermal dissipation |
| Pin 3 | Source β Source connection; reference for gate drive |
Safe Operating Area (DC, TJ=25C)
Typical Applications
IRF3415STRLPBF is suitable for 6 applications: Switch-Mode Power Supply (SMPS) Primary Switch, DC Motor Drive / H-Bridge, Solenoid and Relay Driver, 48V Telecom and E-Mobility Bus Switch, Uninterruptible Power Supply (UPS) Inverter, Battery Management System (BMS) Discharge Path.
Switch-Mode Power Supply (SMPS) Primary Switch
The IRF3415STRLPBF serves as the main primary-side switching element in 100-120 V input AC-DC and DC-DC converter topologies. Its 150 V VDS rating provides ample margin for rectified 85-265 VAC input rails with 2x safety factor on the bulk capacitor voltage, while the 42 mOhm RDS(on) minimizes conduction loss in continuous-conduction-mode (CCM) PFC and hard-switched full-bridge converters. Total gate charge of 133.3 nC supports switching frequencies up to ~100 kHz without excessive gate-drive loss, and the avalanche-rated single-pulse capability absorbs the leakage inductance energy during turn-off in clamped inductive switching. Designers should verify thermal rise on the D2PAK tab under worst-case load and provide a 30x30 mm minimum copper pour for heatsinking.
Recommended
DC Motor Drive / H-Bridge
In brushed DC motor H-bridge circuits the IRF3415STRLPBF handles the high-side and low-side switching positions, switching 43 A continuous motor current at up to 150 V bus. The low 42 mOhm RDS(on) minimizes I2R losses in continuous motor-drive duty, while the ruggedized HEXFET die tolerates back-EMF avalanche events during motor braking. The D2PAK surface-mount package enables compact PCB-side integration in robotic and industrial actuator modules. For PWM frequencies of 20-50 kHz the 133.3 nC gate charge is comfortably within the drive capability of low-cost gate drivers. The exposed tab doubles as both drain connection and primary thermal path when soldered to a 1 oz copper pour.
Recommended
Solenoid and Relay Driver
The IRF3415STRLPBF switches inductive solenoid, valve, and relay coils in industrial automation, drawing on its 43 A continuous drain current rating and avalanche-energy robustness to absorb flyback voltage spikes without external snubbers in low-energy applications. In a low-side switch configuration a 12 V or 24 V gate drive signal from a microcontroller or logic-level isolator directly switches the solenoid, with the MOSFET's 42 mOhm RDS(on) holding voltage drop below 100 mV at typical 2 A coil currents. The 150 V VDS rating provides 5x headroom over 24 V nominal supplies even with reflected inductive transients. Surface-mount D2PAK packaging simplifies automated assembly for high-volume industrial controller boards.
Recommended
48V Telecom and E-Mobility Bus Switch
In 48 V telecommunications and mild-hybrid electric vehicle power distribution the IRF3415STRLPBF provides a hot-swap and load-switch capability at the board level. Its 150 V VDS rating comfortably exceeds the 48 V nominal bus plus 80 V transient spikes defined in ISO 7637 and ETSI EN 300 132-2 standards. The 43 A continuous rating supports high-current POL converters feeding downstream 12 V or 5 V rails. The fifth-generation HEXFET die delivers low conduction loss (42 mOhm RDS(on) at 10 V VGS) which is critical for always-on power path efficiency. Engineers should add a TVS or transient suppressor across the drain-source for additional surge protection beyond the MOSFET's own avalanche rating.
Recommended
Uninterruptible Power Supply (UPS) Inverter
In line-interactive and online UPS inverter stages the IRF3415STRLPBF switches the low-frequency 50/60 Hz inverter leg at 150 V class, with the 43 A continuous rating supporting 2-3 kVA single-phase output. The 42 mOhm RDS(on) ensures low thermal stress during steady-state inverter operation, while the fifth-generation HEXFET technology provides clean switching waveforms with low EMI. The D2PAK surface-mount package enables compact PCB construction in tower UPS form factors. Gate-drive circuits typically use a low-cost bootstrap half-bridge driver such as the IR2109SPBF; designers should size gate resistors for 100-200 ns rise/fall times to balance switching loss and EMI.
Recommended
Battery Management System (BMS) Discharge Path
The IRF3415STRLPBF is used in the discharge FET position of multi-cell battery packs where its 150 V VDS rating covers 12S Li-ion stacks at 50.4 V nominal with substantial transient headroom. The 43 A continuous current rating matches typical 1-2 kW e-bike, power-tool, and small-EV discharge requirements, while the 42 mOhm RDS(on) keeps conduction loss acceptable during sustained high-current discharge. The ruggedized HEXFET die tolerates the reverse-battery and load-dump transients common in battery-pack environments. Designers should pair the MOSFET with an NTC thermistor and active short-circuit protection to limit the worst-case SOA excursion during output short events.
Recommended
Recommended Products Summary
Engineering reference data for IRF3415STRLPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF3415SPBF | IRF3415STRRPBF | VBL1154N | IRFB4115PBF |
|---|---|---|---|---|---|
| Package | D2PAK (TO-263-3) | D2PAK (TO-263-3) - same | D2PAK (TO-263-3) - same | D2PAK (TO-263-3) - same | TO-220 (through-hole, different footprint) |
| Brand | Infineon | Infineon | Infineon | VBsemi | Infineon |
| VDS Max | 150 V | 150 V | 150 V | 150 V (class) | 150 V |
| Mounting Type | Surface Mount (D2PAK) | Surface Mount (D2PAK) | Surface Mount (D2PAK) | Surface Mount (D2PAK) | Through-Hole (TO-220) |
| Pricing (qty 1000) as of 2026-09-15 | $1.22 | $1.05 (tube, est.) | $1.22 (same die) | $0.65 - $0.90 (Chinese brand) | $1.85 - $2.20 (TO-220) |
| RoHS / Lead-Free | Yes (PBF suffix) | Yes (PBF suffix) | Yes (PBF suffix) | Yes | Yes (PBF suffix) |
Key Differentiators
- Fifth-generation HEXFET technology balances low RDS(on) and switching speed (vs IRFB4115PBF)
- D2PAK surface-mount package for automated assembly (vs IRF3415PBF (TO-220))
- 150 V VDS rating with avalanche single-pulse ruggedness (vs VBL1154N (Chinese-brand alternative))
Design Notes
The D2PAK package dissipates up to 200 W at TC=25C, but this requires the tab be soldered to a substantial copper area with thermal vias. Estimated: at ID=20 A and RDS(on)=42 mOhm, conduction loss is I^2R = 20x20x0.042 = 16.8 W. On a 30x30 mm 1 oz copper pour on FR-4 (theta_JA approximately 35-40 C/W), this would raise junction temperature 175 C above ambient - approaching the 175 C limit. Provide a copper pour of at least 50x50 mm or forced-air cooling to keep Tj below 125 C at full load for reliability margin.
Solder the D2PAK exposed tab directly to a copper pour on the top layer; use thermal vias (typically 6-12 of 0.3 mm diameter) to conduct heat to inner and bottom copper layers for additional spreading. The gate pin should have a 10 kOhm pull-down resistor to ensure the MOSFET stays off during MCU reset or power-up. Place the gate-drive resistor (typically 10-47 ohm) as close to the gate pin as possible to minimize parasitic inductance. Keep the gate-drive loop area small to avoid false triggering from dV/dt-induced Miller currents.
Do not drive the gate from a 3.3 V microcontroller directly - the IRF3415STRLPBF VGS(th) is 2.0-4.0 V and is only fully enhanced at VGS=10 V. Driving from 5 V logic may leave the MOSFET in the linear region, dissipating excessive power. Use a dedicated gate driver or gate-drive bootstrap circuit providing 10-12 V at the gate. Also, never exceed VGS of Β±20 V even momentarily - ESD or gate-drive transients can punch through the thin gate oxide and permanently destroy the device.
Minimize the high-current loop area between the MOSFET drain, load, and source return path to reduce parasitic inductance and switching-related voltage overshoot. For switching frequencies above 50 kHz, use a ground plane on an inner layer. Place the gate-drive circuitry on the opposite side of the PCB from the power loop to avoid ground bounce coupling into the gate signal. For hard-switched inductive loads, add a freewheeling diode with adequate reverse-recovery rating across the inductive load before the MOSFET drain-source.
When using the IRF3415STRLPBF in a half-bridge configuration with the IR2109SPBF or similar gate driver, add a small RC snubber (e.g., 10 ohm + 1 nF) across the drain-source of each MOSFET to damp the high-frequency ringing caused by the diode reverse recovery and stray inductance. This ringing can otherwise exceed the VDS rating and cause avalanche stress. Also, ensure the bootstrap capacitor of the high-side gate driver is sized according to the gate charge (133.3 nC) and refresh frequency - typically 100 nF to 1 uF for operation up to 100 kHz.
Compliance Information
RoHS compliant per PBF suffix; lead-free finish. Not AEC-Q100 qualified - for automotive applications choose an AU-prefix variant. Halogen-free status not explicitly stated in retrieved data.
