IRF9Z24NPBF - P-Channel 55V 12A HEXFET MOSFET | Infineon
MPN: IRF9Z24NPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.62 | $620.00 |
IRF9Z24NPBF Overview
What is a P-Channel Power MOSFET? A power MOSFET is a metal-oxide-semiconductor field-effect transistor designed to switch and amplify high currents at high voltages. The P-Channel variant conducts when a negative voltage (relative to the source) is applied to the gate, sourcing current to a load that is tied to ground. P-Channel parts are commonly used as high-side switches in negative-rail or battery-isolation applications because they eliminate the need for a charge pump or bootstrap circuit to drive an N-Channel high-side switch.
Key features include low on-state resistance of 0.175 ohm maximum at Vgs=-10V, gate charge of 12.7 nC typical, and an avalanche-rated single-pulse drain current capability. The TO-220AB package provides a low thermal resistance of 1.67 C/W junction-to-case, enabling high-power dissipation with simple through-hole heatsinking. The package is fully RoHS compliant with lead-free matte-tin plating.
The IRF9Z24NPBF uses Infineon's proprietary stripe-cell HEXFET planar process, which combines a vertical DMOS structure with a polysilicon gate. This architecture balances conduction loss, switching speed, and avalanche ruggedness, and it remains in volume production because of its mature, well-characterized behavior in motor drive, solenoid, and relay-replacement circuits.
Typical applications include DC motor speed control (H-bridge low-side), solenoid and relay drivers, power-OR'ing and load switching in -48V telecom battery plants, and high-side switching in automotive and industrial negative-rail systems. The wide gate-threshold range makes it directly compatible with 5V and 12V logic-level gate drivers.
A key design consideration is that the maximum -55V Vds is absolute - design margin should keep transient Vds below -50V to avoid avalanche stress. Always include a gate-source Zener or pull-down resistor (>=10 kohm) to prevent inadvertent turn-on during supply transients.
This page synthesizes distributor pricing, drop-in TO-220AB alternatives, and practical thermal/avalanche design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IRF9Z24NPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF9Z24NPBF (same form factor and footprint).
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF9Z24N
β Drop-Inπ Reference alternative (not in catalog)
IRF9Z24NPBF
β Drop-Inβ In Stock
$0.62 / Unit
View Datasheet βIRF9540NPBF
β Drop-Inβ In Stock
$0.86 / Unit
View Datasheet βNDP6020P
β Drop-Inπ Reference alternative (not in catalog)
FQP47P06
β Drop-Inπ Reference alternative (not in catalog)
IRF9Z24NPBF Maximum Ratings & Electrical Characteristics
| FET Type | P-Channel |
| Drain-to-Source Voltage (Vdss) | -55 V |
| Continuous Drain Current (Id) @ Tc=25C | -12 A |
| Gate-to-Source Voltage (Vgs) max | Β±20 V |
| Rds(on) max @ Vgs=-10V | 0.175 ohm |
| Gate Charge (Qg) typ | 12.7 nC |
| Power Dissipation (Pd) @ Tc=25C | 45 W |
| Thermal Resistance Junction-to-Case (RthJC) | 1.67 C/W |
| Operating Junction Temperature | -55C to +175C |
| Package | TO-220AB (3-pin) |
| Mounting Type | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix) |
| Avalanche Energy Rated | Yes (single-pulse) |
| Technology | HEXFET (planar DMOS, Gen 5) |
IRF9Z24NPBF Pin Configuration
| Pin 1 | Gate β Gate control input (drive to 0V relative to source for full enhancement) |
| Pin 2 | Drain β Drain terminal - connected to load |
| Pin 3 | Source β Source terminal and tab - typically at the most negative potential |
Safe Operating Area (DC, Tj=175C)
Typical Applications
IRF9Z24NPBF is suitable for 6 applications: DC Motor Speed Control (H-Bridge Low-Side), Solenoid and Relay Driver (High-Side, Negative Rail), Automotive Load Switching (Negative-Rail Accessories), Power OR-ing and Battery Isolation, Linear Voltage Regulation (Hot-Swap / E-Fuse), Audio Amplifier Output Stage (Class-A Bias).
DC Motor Speed Control (H-Bridge Low-Side)
The IRF9Z24NPBF is well-suited as the low-side switch in a discrete H-bridge for brushed DC motor speed control. With a -55V Vds rating it tolerates -24V industrial bus transients and the inductive kick of a motor stop. At -12A continuous current it covers sub-200W motor loads when paired with a complementary N-channel high-side or low-side switch. The 0.175 ohm Rds(on) keeps conduction loss under 2.5W at full load, manageable on a TO-220 clip heatsink. Designers should add a 10kohm gate-source pull-down to prevent half-bridge shoot-through during MCU reset.
Recommended
Solenoid and Relay Driver (High-Side, Negative Rail)
In a -24V or -48V battery plant the IRF9Z24NPBF acts as a high-side P-channel switch that energizes a solenoid, relay coil, or indicator lamp without needing a charge pump. Driving the gate to 0V (relative to source at -24V) gives Vgs=-24V, fully enhancing the device. Its -12A rating supports multi-coil arrays in industrial control panels, and the 0.175 ohm Rds(on) keeps dissipation low enough to forgo a heatsink in many relay-driver boards. Always add a flyback diode across inductive loads and derate Id by 50% above Tc=100C.
Recommended
Automotive Load Switching (Negative-Rail Accessories)
The IRF9Z24NPBF is commonly used to switch automotive accessories tied to the chassis ground return path - the so-called ground-side or negative-rail switching topology. With Vds=-55V it handles 12V/24V automotive jump-start transients, and its TO-220AB package is rugged enough for underhood mounting with a clip-on heatsink. Designers benefit from 5V logic-level gate drive, eliminating the need for a gate-driver IC. Add a TVS diode (e.g. 33V) across drain-source to clamp load-dump transients up to 60V, and use 10kohm gate pull-up to ensure the switch defaults OFF.
Recommended
Power OR-ing and Battery Isolation
In redundant -48V telecom power systems, the IRF9Z24NPBF can be used as a low-loss OR-ing switch when reverse-current blocking is needed between two parallel supplies. The P-channel device conducts from source to drain with a low forward drop of Rds(on)*I, replacing Schottky diodes and saving several watts per rail. Its -55V rating covers -48V nominal plus transient margin, and the 12A rating suits branch-circuit OR-ing. Add a gate control circuit that pulls the gate up to source potential to disable the MOSFET, and ensure body-diode reverse-recovery does not cause cross-conduction.
Recommended
Linear Voltage Regulation (Hot-Swap / E-Fuse)
Operating in the linear region (Vds < saturation) the IRF9Z24NPBF forms a simple electronic fuse or inrush current limiter. At -12A and up to -55V it can absorb the inrush of large capacitor banks at board insertion. Designers set a target Id and use a sense resistor + op-amp to gate the MOSFET when current exceeds threshold. The 45W power dissipation rating means the part can absorb 25W for a few hundred milliseconds during a fault, sufficient for hot-swap into a 1000uF capacitor bank at -48V. Always check the SOA curve before designing linear-mode circuits.
Recommended
Audio Amplifier Output Stage (Class-A Bias)
Although uncommon, the IRF9Z24NPBF can be used in a complementary Class-A audio output stage where the P-channel device sources current into the load during the negative half-cycle. Its low Rds(on) of 0.175 ohm ensures low crossover distortion, and the TO-220AB package is easily heatsinked on the chassis of a high-fidelity amplifier. Designers should bias the gate to set the quiescent current (typically 50-200mA per device) and ensure the SOA is not exceeded at low Vds/high Id combinations.
Recommended
Recommended Products Summary
Engineering reference data for IRF9Z24NPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF9Z24N | IRF9540NPBF | NDP6020P | FQP47P06 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | onsemi | onsemi |
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Drain-to-Source Voltage (Vds) | -55 V | -55 V | -100 V | -60 V | -60 V |
| Continuous Drain Current (Id) | -12 A | -12 A | -23 A | -50 A | -47 A |
| Rds(on) max @ Vgs=-10V | 0.175 ohm | 0.175 ohm | 0.20 ohm | 0.040 ohm | 0.026 ohm |
| Power Dissipation (Pd) | 45 W | 45 W | 94 W | 150 W | 120 W |
| RoHS / Lead-Free | Yes (PBF) | No (leaded) | Yes (PBF) | Yes | Yes |
Key Differentiators
- Mature, well-characterized fifth-generation HEXFET silicon (vs Generic P-Channel MOSFETs)
- Lead-free (Pb-free) RoHS-compliant plating (PBF suffix) (vs IRF9Z24N (leaded))
- Higher current handling than -55V P-Channel competitors (vs NDP6020P (onsemi, -60V/-50A))
Design Notes
Estimated: At Vds=-30V and Id=-12A the IRF9Z24NPBF dissipates P = Vds * Id = 360W momentarily during turn-off of a fully-on state; this far exceeds the 45W continuous rating, so switching must be fast (< 100ns) to stay within SOA. For continuous linear-mode operation (e-fuse, hot-swap), keep dissipation under 25W or use a larger TO-247 package like IRFP4710PBF. Always mount the tab with thermal compound to a heatsink rated at <= 5 C/W for sustained 10W operation.
Through-hole TO-220 mounting requires 1.6 mm or thicker PCB and pad diameters >= 1.7 mm for the three pins. Keep drain trace away from gate-source PCB capacitance to prevent Miller-induced turn-on; route the gate trace as a twisted pair or coax if the gate driver is more than 50 mm from the MOSFET. For high di/dt switching, use a ground plane on the source side and minimize drain-trace loop area to reduce ringing and EMI.
Critical pitfall #1: never drive the gate above the Β±20V Vgs rating - use a 16V Zener from gate to source for protection. Critical pitfall #2: the IRF9Z24NPBF body diode has a slow reverse-recovery time (typical for HEXFET), so it is unsuitable for continuous hard-switching above 50 kHz in half-bridge topologies - choose a part with fast body diode (e.g. IRF9Z24N has the same slow diode). Critical pitfall #3: do not block more than -55V; load-dump transients in 24V automotive systems can exceed 60V without a TVS clamp.
Compliance Information
Lead-free (Pb-free) per PBF suffix and Infineon product page. RoHS compliant. Not AEC-Q100 qualified - for automotive applications requiring qualification, select a Q-grade part. Halogen-free per Infineon declaration.
