Micron Technology

MT42L16M32D1HE-18 - 512Mb LPDDR2 SDRAM 134-VFBGA | Micron

MPN: MT42L16M32D1HE-18 βœ“ Active
In Stock Ships in 1-3 business days
1.2 V Vdss 134-VFBGA (10 x 11.5 mm) Package 533 MHz Speed Mobile LPDDR2 SDRAM Memory
From $2.9 USD / Unit
MOQ: 1 |
Price updated: 2026-09-01
Volume Pricing
Qty Unit Price Extended
1 $4.2 $4.20
10 $3.95 $39.50
100 $3.55 $355.00
500 $3.2 $1,600.00
1,000 $2.9 $2,900.00
ℹ️ All prices are in USD

Drop-in alternatives for MT42L16M32D1HE-18 β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

MT42L16M32D1HE-18 IT:E

βœ… Drop-In
πŸ“¦ 134-VFBGA (10x11.5)
same die/package, industrial grade -40C to +85C instead of family designation

πŸ“‹ Reference alternative (not in catalog)

MT42L16M32D1HE-18 AAT:E

βœ… Drop-In
πŸ“¦ 134-VFBGA (10x11.5)
same die/package, automotive grade -40C to +105C, AEC-Q100 qualified

πŸ“‹ Reference alternative (not in catalog)

MT42L16M32D1HE-18 AUT:E

βœ… Drop-In
πŸ“¦ 134-VFBGA (10x11.5)
same die/package, automotive grade -40C to +105C, AEC-Q100 qualified

πŸ“‹ Reference alternative (not in catalog)

MT42L32M32D1HE-18 IT:E

βœ… Drop-In ⚠️ 参数待ιͺŒθ―
πŸ“¦ 134-VFBGA (10x11.5)
1Gbit density (32M x 32) vs 512Mbit (-50% density difference), same speed grade and footprint - density upgrade, verify memory map

πŸ“‹ Reference alternative (not in catalog)

MT42L16M32D1HE-18 Maximum Ratings & Electrical Characteristics

Memory Type Mobile LPDDR2 SDRAM
Density 512 Mbit
Organization 16M x 32
Clock Frequency 533 MHz
Data Rate 1066 MT/s (DDR)
Supply Voltage VDD 1.2 V
Supply Voltage VDDQ 1.2 V
Interface Parallel, LPDDR2 CA bus
Package 134-VFBGA (10 x 11.5 mm)
Mounting Type Surface Mount
Operating Temperature (IT:E) -40C to +85C
Operating Temperature (AAT:E) -40C to +105C
Speed Grade -18
Low-Power Modes Self-refresh, power-down, deep power-down, clock stop
Automotive Qualification (AAT:E variant) AEC-Q100
RoHS Status Compliant
Technology LPDRAM

MT42L16M32D1HE-18 134-vfbga (10 x 11.5 mm) Pin Configuration Guide

Complete pinout information for MT42L16M32D1HE-18 (134-vfbga (10 x 11.5 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

134-vfbga (10 x 11.5 mm) package pinout diagram for MT42L16M32D1HE-18

No detailed pinout data available for MT42L16M32D1HE-18.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for MT42L16M32D1HE-18 Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

MT42L16M32D1HE-18 is suitable for 6 applications: Automotive Infotainment and ADAS Buffering, Smartphone and Tablet Main Memory, Industrial HMI and Embedded Vision Buffers, Networking Line-Card Frame Buffering, Portable Medical and Test Instruments, Consumer IoT Gateways and Smart Displays.

πŸš—

Automotive Infotainment and ADAS Buffering

The MT42L16M32D1HE-18 AUT:E variant, qualified to AEC-Q100 and rated -40C to +105C, targets automotive infotainment head units and ADAS sensor-fusion modules. Its 1066 MT/s data rate on a 32-bit bus delivers roughly 4.2 GB/s of peak bandwidth, sufficient for camera frame buffering and navigation map caching at 512Mb density. At 1.2V VDD/VDDQ with self-refresh during idle periods, it limits DRAM power draw - a key factor in systems with strict thermal budgets behind windshields. Place it close to the SoC with length-matched CA/DQ routing and validate the Micron derating tables at maximum junction temperature for guaranteed AC timing across the full automotive range.

πŸ“±

Smartphone and Tablet Main Memory

In mobile handsets and tablets, the MT42L16M32D1HE-18 IT:E provides application-processor working memory at minimal energy cost. The 1.2V LPDDR2 interface directly matches LPDDR2-capable SoC memory controllers, while self-refresh and deep power-down modes preserve SRAM-like standby behavior during screen-off states - critical for battery life. The x32 organization in one 10 x 11.5 mm VFBGA saves board area versus stacked narrower parts. Designers should budget for CA-bus timing (point-to-point), use on-die-termination-free LPDDR2 termination per JEDEC practice, and pair the DRAM with an eMMC or UFS storage device managed by the same PMIC rails for power-sequenced bring-up.

🏭

Industrial HMI and Embedded Vision Buffers

Industrial human-machine interfaces and embedded-vision nodes benefit from the IT:E grade (-40C to +85C) of the MT42L16M32D1HE-18. Frame buffers for touch-panel graphics controllers demand sustained bandwidth; the 1066 MT/s x32 bus provides it with lower dynamic power than DDR3L, easing passive cooling in sealed enclosures. Deep power-down supports fast-resume standby in always-on panels. Design guidance: keep VDDQ decoupling (multiple 0.1 uF plus bulk capacitance) within 2 mm of supply balls, follow controller-recommended trace-length matching, and confirm refresh rate requirements (x1/x2 temperature-compensated refresh) at the low end of the industrial range where retention characteristics shift.

🌐

Networking Line-Card Frame Buffering

Access-layer switches and routers use packet frame buffers sized in the hundreds of megabits; the MT42L16M32D1HE-18's 512Mbit 16M x 32 organization fits this range with high burst efficiency per row activation. Its 1.2V operation reduces DRAM power - a meaningful saving in equipment with dozens of memory devices per chassis. LPDDR2's clock-stop feature allows zero-frequency idle between bursts, useful in bursty traffic profiles. Thermal design is straightforward: DRAM power scales with utilization, so model worst-case 100% read/write toggle current from the Micron datasheet IDD tables and provide airflow or copper pour accordingly across the -18 speed grade's operating envelope.

πŸ’Š

Portable Medical and Test Instruments

Battery-powered medical monitors and handheld test instruments select the MT42L16M32D1HE-18 IT:E where waveform capture buffers require DRAM density with strict energy budgets. At 1.2V, dynamic read/write current is markedly lower than DDR3L equivalents, extending battery runtime during continuous acquisition. Self-refresh preserves buffer contents during processor sleep between samples. Designers must consider LPDDR2's ZQ calibration and initialization sequence timing when implementing custom memory controllers in FPGAs, and should verify the -18 speed grade timing at both temperature extremes. For sterilizable or patient-coupled equipment, confirm the full Micron reliability qualification report, since medical qualification regimes typically reference industrial-grade data.

🧩

Consumer IoT Gateways and Smart Displays

IoT gateways with voice assistants and smart displays need local frame and audio buffers without the cost of gigabyte-class memory. The 512Mb MT42L16M32D1HE-18 (commercial or IT:E grade) supplies this at the LPDDR2 power point, and its deep power-down mode supports milliwatt-class standby mandated by energy regulations. One 134-ball VFBGA minimizes PCB layers in cost-sensitive gateway hardware. Integration notes: pair with LPDDR2-capable SoCs (many ARM Cortex-A application processors), implement the JEDEC initialization sequence including MRW register writes, and provision a power-rail reset that guarantees VDD ramps monotonically to 1.2V to avoid undefined states during brown-out events common in mains-powered IoT hardware.

What is the MT42L16M32D1HE-18?
The MT42L16M32D1HE-18 is a Micron 512Mbit Mobile LPDDR2 SDRAM organized as 16M x 32, running at a 533 MHz clock (1066 MT/s data rate) from a 1.2V supply. It is packaged in a 134-ball VFBGA measuring 10 x 11.5 mm and is offered in IT (-40C to +85C), AAT automotive (-40C to +105C, AEC-Q100), and standard commercial temperature grades per Micron's product catalog.
What are the key specifications of MT42L16M32D1HE-18 that engineers should know?
Key specifications: 512Mbit density in a 16M x 32 organization; LPDDR2 interface at 1.2V VDD/VDDQ; 533 MHz clock giving 1066 MT/s on the x32 bus; -18 speed grade; 134-VFBGA (10 x 11.5 mm) package; temperature grades IT (-40 to +85C) and AAT (-40 to +105C, AEC-Q100). According to the Micron part catalog and DigiKey listings, these define its fit for automotive and mobile memory buffering designs.
Where to buy MT42L16M32D1HE-18 online?
The MT42L16M32D1HE-18 is available through authorized distributors including DigiKey, Mouser, and Newark, and via brokers such as Ampheo and JLCPCB assembly services. DigiKey lists the IT:E variant (stock code 11193909) and Mouser lists the AAT:E and AUT:E variants with same-day shipping on in-stock lines as of 2026-09-02. XAIPART also accepts quote requests for volume pricing across all temperature-grade variants.
What is the price of MT42L16M32D1HE-18?
Pricing for the MT42L16M32D1HE-18 family varies by temperature grade and volume; the values on this page (starting at the qty-1 tier) are XAIPART estimates as of 2026-09-02 and should be confirmed with a live quote. Distributor listings on DigiKey and Mouser show stock for the IT:E and AAT:E variants, and Octopart reports availability across 3-5 distributors for cross-checking current unit pricing.
What is the difference between MT42L16M32D1HE-18 IT:E and AAT:E?
The difference is temperature grade and qualification: the IT:E variant is industrial, rated -40C to +85C, while the AAT:E variant is automotive, rated -40C to +105C and qualified to AEC-Q100 per Mouser and Ampheo listings. Both share the same 512Mbit 16M x 32 LPDDR2 die, the same -18 speed grade (533 MHz), and the identical 134-VFBGA package, so they are functionally interchangeable within their temperature envelopes.
Is the AUT:E variant suitable for automotive applications?
Yes. The MT42L16M32D1HE-18 AUT:E is the automotive temperature-grade variant rated -40C to +105C, and Micron marks the AAT:A/E family as AEC-Q100 qualified in distributor descriptions (Mouser, Ampheo). For ADAS, cluster, or infotainment designs, specify the AUT:E (or AAT:E) suffix; the standard IT:E part is intended for industrial (-40C to +85C) and is not automotive qualified.
What is the best drop-in replacement for MT42L16M32D1HE-18?
The closest drop-in replacements are the sibling temperature grades on the same die: MT42L16M32D1HE-18 IT:E (industrial) and MT42L16M32D1HE-18 AUT:E (automotive, AEC-Q100), both pin-to-pin in the same 134-VFBGA (10 x 11.5 mm) package. Within the same Micron LPDDR2 family, the 1Gbit MT42L32M32D1HE-18 offers double density in a compatible footprint but is a density upgrade, not a byte-for-byte swap - verify your memory map before substituting.
Is MT42L16M32D1HE-18 the same as MT42L16M32D1HE-18 IT:E?
Functionally yes for most uses: the IT:E suffix denotes the industrial temperature-grade, lead-free version (-40C to +85C) of the same 512Mbit 16M x 32 LPDDR2 die in the same 134-VFBGA package. The base MT42L16M32D1HE-18 string without a grade suffix is the family designation; ordering should always specify the full suffix (IT:E, AAT:E, or AUT:E) to guarantee the correct temperature and qualification envelope.
What is the best non-Micron equivalent for MT42L16M32D1HE-18?
Based on the cross-reference sources reviewed for this page, no verified pin-to-pin cross-brand equivalent with the same 512Mbit 16M x 32 organization and 134-VFBGA (10 x 11.5 mm) footprint could be confirmed in published distributor cross-reference data. LPDDR2 parts from other vendors exist in similar capacities but must be footprint-verified against the Micron ball map before layout reuse; we therefore recommend same-family Micron alternatives instead.
When should I choose MT42L16M32D1HE-18 over a DDR3 SDRAM such as MT41K128M16JT?
Choose the MT42L16M32D1HE-18 when power is the dominant constraint: at 1.2V VDD/VDDQ with self-refresh and deep power-down modes, LPDDR2 draws substantially less standby current than 1.35V/1.5V DDR3 parts like the MT41K128M16JT-125. Choose DDR3 when your controller only supports a DDR3 interface or when cost per bit at higher densities matters more. The LPDDR2 CA bus also saves pins, which helps in compact BGA layouts.
Is MT42L16M32D1HE-18 suitable for automotive ADAS buffering?
Yes, specifically the AUT:E / AAT:E grade. With -40C to +105C operation, AEC-Q100 qualification, and 1066 MT/s bandwidth on a 32-bit bus, it serves sensor-fusion and camera-frame buffering roles where moderate density (512Mb) and low power are priorities. Designers should validate speed derating at maximum junction temperature per the Micron LPDDR2 datasheet derating tables and budget for refresh current in thermal calculations.
Where to download the MT42L16M32D1HE-18 datasheet PDF?
The datasheet for the MT42L16M32D1HE-18 family is downloadable from Micron's official part-catalog page (micron.com, part detail MT42L16M32D1HE-18-IT-E), which links the current 512Mb LPDRAM LPDDR2 datasheet covering density, AC/DC parameters, and package drawings. Mirrors exist on distributor sites (DigiKey, Newark, Ampheo) and aggregator datasheet libraries, but the Micron portal guarantees the latest revision.
Where can I find the ballout of the 134-VFBGA package?
The complete 134-ball ballout (address/command balls, DQ/DQS/DM groups, power and ground balls) is in the package drawing section of the Micron 512Mb LPDDR2 datasheet available from the Micron part-catalog page. Because VFBGA ball assignments are dense and ball-count specific, XAIPART does not reproduce the full ball map here; always verify against the official drawing before layout.
What is the operating voltage of MT42L16M32D1HE-18?
The MT42L16M32D1HE-18 operates from a 1.2V supply for both VDD (core) and VDDQ (I/O), which is the nominal LPDDR2 S2 voltage. This low-voltage operation, combined with low-power modes such as self-refresh and deep power-down, is the primary reason the device is chosen over 1.5V DDR3 alternatives in battery-powered and thermally constrained designs, per Micron's LPDDR2 family documentation.
Is MT42L16M32D1HE-18 RoHS compliant and lead-free?
Yes. Micron's LPDDR2 family, including the MT42L16M32D1HE-18 in all temperature grades, is RoHS compliant and lead-free, as indicated by the E (lead-free) suffix in the ordering part number and the distributor listings on DigiKey and Mouser. For REACH, halogen-free, and conflict-minerals declarations, request the official Micron product environmental compliance documents, as those details are not reproduced in distributor summary data.

Engineering reference data for MT42L16M32D1HE-18 β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the MT42L16M32D1HE-18 when you need 512Mb of volatile buffer memory with a 32-bit bus, low 1.2V power, and an LPDDR2-capable controller. Specify the IT:E suffix for industrial (-40C to +85C) designs, and the AUT:E or AAT:E suffix for automotive systems requiring AEC-Q100 and up to +105C. If you only need a different temperature envelope, switch suffixes - the die and 134-VFBGA footprint are identical. If 512Mb is insufficient, the same-footprint MT42L32M32D1HE-18 (1Gbit, 32M x 32) doubles density without a board respin but requires memory-map changes. If your platform controller speaks DDR3L instead, consider MT41K128M16JT-125 variants, accepting higher standby power. If you are designing new hardware and can adopt LPDDR4X, MT53B128M32D1DS-062 offers a more modern interface, at the cost of a different footprint and controller requirement.

Comparison with Alternatives

Parameter This Product MT42L16M32D1HE-18 IT:E MT42L16M32D1HE-18 AAT:E MT42L16M32D1HE-18 AUT:E MT42L32M32D1HE-18 IT:E
Package 134-VFBGA (10 x 11.5 mm) 134-VFBGA (10 x 11.5 mm) - same 134-VFBGA (10 x 11.5 mm) - same 134-VFBGA (10 x 11.5 mm) - same 134-VFBGA (10 x 11.5 mm) - same
Brand Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Density 512 Mbit 512 Mbit 512 Mbit 512 Mbit 1 Gbit
Organization 16M x 32 16M x 32 16M x 32 16M x 32 32M x 32
Data Rate 1066 MT/s (533 MHz) 1066 MT/s (533 MHz) 1066 MT/s (533 MHz) 1066 MT/s (533 MHz) 1066 MT/s (533 MHz)
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Operating Temperature Per grade suffix (IT: -40 to +85C) -40C to +85C -40C to +105C -40C to +105C -40C to +85C
AEC-Q100 Automotive Qualification No (grade-dependent) No Yes Yes No

Key Differentiators

  • Automotive AEC-Q100 option up to +105C (vs MT42L16M32D1HE-18 IT:E)
  • LPDDR2 1.2V power point vs DDR3L alternatives (vs MT41K128M16JT-125 AUT:K)
  • Same-footprint density upgrade path (vs MT42L32M32D1HE-18 IT:E)

Design Notes

LPDDR2 uses a command/address (CA) bus shared across dies with no on-die termination, so signal integrity depends on board-level design. Keep CA trace lengths matched within the tolerance your memory controller specifies (typically a few hundred mils skew budget), route DQ/DQS/DM as tightly matched length groups per byte lane, and reference all high-speed traces to a continuous VDDQ plane. Simulate the CA bus at 533 MHz with IBIS models from the Micron support portal before tape-out; reflections on unterminated CA lines are the most common cause of init failures.

Provide separate, low-impedance 1.2V rails for VDD and VDDQ, each decoupled with a network of 0.1 uF ceramics within 2 mm of the VFBGA supply balls plus at least one 10 uF bulk capacitor per rail. Sequence power so VDD ramps monotonically to 1.2V before or with VDDQ to avoid latch-up or undefined register states; most PMICs for LPDDR2 SoCs include dedicated DRAM rails with controlled slew. Estimated: at full 1066 MT/s utilization, IDD currents from the Micron datasheet tables should be summed to size the rail - do not rely on idle current alone.

The VFBGA package dissipates heat primarily through the ball field into the PCB. Use solid VDD/VSS planes on adjacent layers under the package with an array of thermal vias to spread heat into inner planes. Estimated: DRAM power at moderate utilization is well under 0.5 W, but in the AUT:E / AAT:E automotive grade (-40C to +105C ambient) verify that junction temperature stays within the Micron rating by combining worst-case IDD currents from the datasheet with your PCB theta_JA estimate, and apply the speed-derating tables at high temperature when scheduling 533 MHz operation.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Unknown

RoHS compliance and lead-free status indicated by the E suffix and distributor listings (DigiKey, Mouser) for the IT:E / AAT:E / AUT:E grades. AEC-Q100 applies only to the AAT:A/E automotive grades, not the base part. REACH, halogen-free, and conflict-minerals declarations should be obtained from Micron's official product environmental documents.

Data verified on: 2026-09-02 β€” data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Micron Technology MT42L16M32D1HE-18 MT42L16M32D1HE-18 IT:E MT42L16M32D1HE-18 AAT:E MT42L16M32D1HE-18 AUT:E MT42L32M32D1HE-18 LPDDR2 Mobile LPDDR2 SDRAM LPDRAM DRAM volatile memory 134-VFBGA VFBGA surface mount AEC-Q100 RoHS JEDEC LPDDR2 standard self-refresh deep power-down 1066 MT/s 1.2V VDDQ ADAS buffering automotive infotainment smartphone main memory
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