SQ4532AEY-T1_GE3 - 30V Dual N+P MOSFET AEC-Q101 | Vishay
MPN: SQ4532AEY-T1_GE3 β Last Time Buy| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.68 | $1.68 |
| 10 | $1.42 | $14.20 |
| 100 | $1.19 | $119.00 |
| 500 | $0.98 | $490.00 |
| 1,000 | $0.79 | $790.00 |
| 3,000 | $0.66 | $1,980.00 |
SQ4532AEY-T1_GE3 Overview
A complementary MOSFET array integrates one N-channel and one P-channel MOSFET die in a single package, occupying a position between discrete small-signal transistors and full power-management ICs within the semiconductor hierarchy. By pairing opposite-polarity FETs, the device simplifies half-bridge, load-switch, and push-pull topologies and shortens the high-side/low-side routing path on the PCB.
Key features include a 30 V drain-source rating, a 20 V gate-source rating, AEC-Q101 qualification for automotive environments, and a 175 C maximum operating junction temperature, which is higher than the 150 C limit of many comparable arrays. The device is halogen-free and RoHS compliant, and it is supplied in tape-and-reel packaging for automated assembly.
Architecturally, the two MOSFET dies are fabricated in Vishay Siliconix TrenchFET silicon technology optimized for low on-resistance at moderate currents. The low Rds(on) reduces conduction loss, while the matched complementary pair enables symmetric switching performance in bridge and polarity-protection circuits.
Typical applications include automotive body and power modules, H-bridge and half-bridge motor drivers, DC load switches and reverse-polarity protection, and industrial power management where a single compact package must host both polarities. The 175 C rating suits underhood and high-ambient locations.
A key design consideration is thermal: 3.3 W dissipation requires careful copper-area sizing on the SOIC-8 exposed-lead footprint, and this exact ordering code is subject to Vishay product termination notice PTN-SIL-013-2026.
This page synthesizes verified distributor data, the AEC-Q101 compliance trail, drop-in alternatives, and practical design notes not found on any single manufacturer or distributor page.
Drop-in alternatives for SQ4532AEY-T1_GE3 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
SQ4532CEY-T1_GE3
β Drop-Inπ Reference alternative (not in catalog)
SQ4532AEY-T1_BE3
β Drop-Inπ Reference alternative (not in catalog)
SQ4532CEY-T1_BE3
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
SQ4532AEY-T1_GE3 Maximum Ratings & Electrical Characteristics
| Configuration | Dual complementary N-channel + P-channel MOSFET array |
| Drain-Source Voltage (Vds) | 30 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (N-ch, Tc) | 7.3 A |
| Continuous Drain Current (P-ch, Tc) | 5.3 A |
| On-Resistance (Rds on) | 0.021 ohm |
| Power Dissipation (Tc) | 3.3 W |
| Operating Junction Temperature | -55C to +175C |
| Package | SOIC-8 (MS-012AA / MS-012) |
| Mounting Type | Surface Mount |
| Transistor Technology | Silicon, Metal-Oxide Semiconductor FET (TrenchFET) |
| Automotive Qualification | AEC-Q101 Qualified |
| RoHS Status | Compliant |
| Halogen Free | Yes |
| Packaging | Tape & Reel (T1) |
| Termination Notice | PTN-SIL-013-2026 (LTB 2026-08-23, last ship 2027-02-22) |
SQ4532AEY-T1_GE3 Pin Configuration
| Pin 1 | G(N) β N-channel gate |
| Pin 2 | S(N) β N-channel source (paralleled) |
| Pin 3 | S(N) β N-channel source (paralleled) |
| Pin 4 | G(P) β P-channel gate |
| Pin 5 | G(P) β P-channel gate |
| Pin 6 | S(P) β P-channel source (paralleled) |
| Pin 7 | S(P) β P-channel source (paralleled) |
| Pin 8 | D β Common drain |
Typical Applications
SQ4532AEY-T1_GE3 is suitable for 6 applications: Automotive Load Switches and Body Electronics, H-Bridge DC Motor Drive, Reverse-Polarity and DC Load Protection, Battery Management and Power Path Switching, Industrial Power Distribution and PLC I/O, Telecom and Computing Power ORing and Hot-Swap.
Automotive Load Switches and Body Electronics
In automotive body-control modules, seat controllers, and lighting drivers, a complementary N+P array lets one package implement a high-side switch (P-channel) plus a low-side switch or ground-path control (N-channel). The SQ4532AEY-T1_GE3 fits because AEC-Q101 qualification, the -55 C to +175 C junction range, and the 30 V rating cover 12 V automotive load-dump transients with external clamping. The 0.021 ohm on-resistance keeps conduction loss below about 0.15 W at 2.5 A continuous, easing copper-area sizing in dense ECU layouts. Place the device near the connector, with at least 1 square inch of copper pour and a 30 V or higher TVS on the supply rail. Note the last-time-buy under PTN-SIL-013-2026: new ECUs should design in SQ4532CEY-T1_GE3, which uses identical silicon.
Recommended
H-Bridge DC Motor Drive
Small DC motors in automotive actuators (mirror adjusters, dampers, pumps) need both high-side P-channel and low-side N-channel FETs. The SQ4532AEY-T1_GE3 provides one of each in a single SOIC-8, halving BOM positions and shortening the bridge loop. With 7.3 A (N-ch) and 5.3 A (P-ch) Tc ratings and 0.021 ohm on-resistance, a half-bridge sustains roughly 3 A continuous with about 0.2 W conduction loss per device. Drive gates through 10-50 ohm resistors to balance PWM edge speed against EMI; the 20 V gate rating permits direct drive from 5-12 V logic with a gate clamp. For PWM above 20 kHz, verify switching loss in the datasheet AC curves and enlarge copper under pins 2-3 and 6-7 for heat spreading.
Recommended
Reverse-Polarity and DC Load Protection
A P-channel MOSFET connected source-to-supply and drain-to-load with the gate pulled to ground forms a low-loss reverse-polarity blocker; the companion N-channel device in the SQ4532AEY-T1_GE3 then serves as a load-disconnect or soft-start discharge switch. The 30 V rating suits 12 V rails with transient margin, and the 0.021 ohm on-resistance drops only about 105 mV at 5 A - far less than a Schottky diode, eliminating heatsink needs for most loads. The 175 C junction limit permits high-ambient locations such as underhood relay boxes. Size the PCB pour for the inrush and steady current, and add a zener from gate to source rated below 20 V to protect the gate during transients. Confirm current polarity routing so the internal body diode blocks reverse current as intended.
Recommended
Battery Management and Power Path Switching
Portable and backup battery systems use complementary arrays for charge-path (P-channel) and discharge-path (N-channel) switching. The SQ4532AEY-T1_GE3 covers multi-cell 12 V-class packs with its 30 V drain-source rating, and the 20 V gate rating allows straightforward low-side gate drive from pack controllers. At 0.021 ohm, a 3 A discharge path dissipates about 0.19 W per leg, which a compact SOIC-8 with 1 square inch of copper holds near ambient. The AEC-Q101 qualification extends suitability to automotive 12 V auxiliary batteries and jump-start accessories. In battery designs, watch for the internal body diodes when defining charge/discharge direction, and use the N-channel device for the ground-referenced switch to simplify gate-drive level shifting.
Recommended
Industrial Power Distribution and PLC I/O
Industrial 24 V-class logic sometimes tolerates 30 V-rated devices on protected rails; in PLC digital-output modules and relay-replacement circuits, the SQ4532AEY-T1_GE3 switches solenoids, indicators, and low-power actuators. The 7.3 A/5.3 A Tc ratings support inrush-heavy inductive loads when a soft-start gate ramp is applied, and the halogen-free RoHS construction meets modern panel equipment requirements. The SOIC-8 footprint supports automated assembly on standard industrial boards, and the 175 C rating tolerates control-cabinet hot spots up to about 85 C ambient with proper derating. Pair each device with a freewheeling path or rely on the body diode for inductive clamp, and verify switching frequency versus datasheet gate-charge numbers for thermally safe PWM operation.
Recommended
Telecom and Computing Power ORing and Hot-Swap
Redundant 12 V and intermediate-bus feeds use P-channel FETs for ORing and inrush-limited hot-swap, with an N-channel device available for discharge or status signaling. The SQ4532AEY-T1_GE3 offers 0.021 ohm conduction - at 2 A the ORing path drops about 42 mV and dissipates only 84 mW, improving efficiency versus diode ORing by roughly 0.6 W per rail. The SOIC-8 package suits dense server and telecom line cards, and the halogen-free build aligns with modern backplane material requirements. Implement soft-start with an RC on the gate plus a gate-source zener below 20 V, and verify SOA-style inrush behavior against the datasheet because linear-mode hot-swap events stress the die beyond continuous ratings.
Recommended
Recommended Products Summary
Engineering reference data for SQ4532AEY-T1_GE3 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | SQ4532CEY-T1_GE3 | SQ4532AEY-T1_BE3 | SQ4532CEY-T1_BE3 |
|---|---|---|---|---|
| Package | SOIC-8 (MS-012AA) | SOIC-8 (MS-012AA) - same | SOIC-8 (MS-012AA) - same | SOIC-8 (MS-012AA) - same |
| Brand | Vishay Intertechnology (Vishay Siliconix) | Vishay Intertechnology | Vishay Intertechnology | Vishay Intertechnology |
| Configuration | Dual complementary N + P channel | Dual complementary N + P channel | Dual complementary N + P channel | Dual complementary N + P channel |
| Drain-Source Voltage | 30 V | 30 V | 30 V | 30 V |
| Drain Current (N-ch / P-ch, Tc) | 7.3 A / 5.3 A | 7.3 A / 5.3 A (same die) | 7.3 A / 5.3 A | 7.3 A / 5.3 A (same die) |
| On-Resistance (Rds on) | 0.021 ohm | 0.021 ohm (same die) | 0.021 ohm | 0.021 ohm (same die) |
| Junction Temperature | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C |
| Lifecycle Status | Last time buy (LTB 2026-08-23) | Active (approved successor) | Last time buy (LTB 2026-08-23) | Active (successor family) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified | AEC-Q101 qualified | AEC-Q101 qualified (per family data) |
Key Differentiators
- 175 C maximum junction temperature (vs SQ4532CEY-T1_GE3)
- Complementary N+P integration in one SOIC-8 (vs IRF7341GTRPBF)
- Guaranteed same-silicon successor path (vs Typical competitor arrays)
Design Notes
The datasheet 3.3 W dissipation rating applies at a controlled case temperature; realistic board-level performance depends entirely on copper. Estimated: at 2 W in a theta-JA of about 100 C/W for a minimal 8-SOIC footprint, junction rise approaches 200 C - exceeding the 175 C limit. Provide at least 1 square inch of 2 oz copper connected to the source pins (2-3, 6-7), add thermal vias to inner planes, and derate linearly above about 25 C ambient. For continuous duty above 1.5 W in enclosed automotive modules, simulate or measure board temperature.
The lifecycle risk outweighs the electrical risk for this part: Vishay PTN-SIL-013-2026 sets last-time-buy at 23 August 2026 and last-time-ship at 22 February 2027. Do not start a new design on this exact ordering code; design in SQ4532CEY-T1_GE3, which uses identical silicon and die design. If bridging with remaining stock, note that SQ4532AEY-T1_BE3 shares the same end-of-life dates, so it is not a lasting second source. Also respect the 20 V gate limit with a gate-source zener clamp in automotive transient environments.
Place the SOIC-8 within a few millimeters of the load connector and bulk capacitance to keep the power loop short. Paralleled source pins (2-3 N-ch, 6-7 P-ch) should both be tied to wide copper; do not route current through a single pin. Insert 10-50 ohm gate resistors close to the gate pins to control switching edges, and add a 10k pull-down (N-ch) or pull-up (P-ch) so the FETs stay in a defined state during controller reset. A gate-source TVS or zener below 20 V protects against automotive transients.
Compliance Information
Datasheets.com lists the part as HALOGEN FREE AND ROHS COMPLIANT. Mouser confirms AEC-Q101 qualification (automotive discrete standard). REACH and conflict-minerals status not stated in provided data.
