K4B4G1646D-BHMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
N.º da peça: K4B4G1646D-BHMA ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $4.5 | $4,50 |
| 10 | $4.1 | $41,00 |
| 100 | $3.7 | $370,00 |
| 500 | $3.3 | $1.650,00 |
| 1.000 | $2.9 | $2.900,00 |
K4B4G1646D-BHMA Visão geral
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high data rates. DDR3L is commonly used in mobile devices, embedded systems, and servers where power efficiency is critical.
Key features include a 4Gb density, 256M x 16 organization, 1866 Mbps data rate, and 1.35V operation. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also features auto refresh and self refresh modes, and is compatible with JEDEC DDR3L standards. The 96-ball FBGA package provides a compact footprint suitable for space-constrained designs.
Technically, the K4B4G1646D-BHMA uses a D-die process, which offers improved performance and power characteristics compared to earlier dies. It supports DLL (Delay-Locked Loop) enabled mode for precise timing, and includes features like write leveling and read leveling for signal integrity. The device operates over a temperature range of -40°C to +95°C (TC), making it suitable for industrial applications.
Typical applications include personal computing devices, mobile phones, tablets, digital cameras, printers, networking equipment, industrial machinery, medical devices, automotive electronics, and solid-state drives. Its low voltage and high density make it ideal for power-sensitive portable devices and high-performance computing platforms.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 1866 Mbps. Also, verify the timing parameters for your specific application, as DDR3L timing is critical for reliable operation.
Alternativas drop-in para K4B4G1646D-BHMA — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com K4B4G1646D-BHMA (mesmo formato e footprint) — diferindo em Package, Data Rate, Operating Temperature, Supply Voltage, CAS Latency.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
K4B4G1646E-BMK0
✅ Drop-In✓ Em estoque
$6.5 / unidade
Ver ficha técnica →K4B4G1646D-BMK0
✅ Drop-In✓ Em estoque
$5.9 / unidade
Ver ficha técnica →K4B4G1646D-BPH90
✅ Drop-In✓ Em estoque
$7.6 / unidade
Ver ficha técnica →K4B4G1646D-BFMA
✅ Drop-In✓ Em estoque
$6.5 / unidade
Ver ficha técnica →K4B4G1646E-BYMA
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$14.3182 / unidade
Ver ficha técnica →MT41K256M16HA-125
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$6.3636 / unidade
Ver ficha técnica →H5TC4G63AFR-PBA
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$3.9773 / unidade
Ver ficha técnica →IS43TR16256AL-125KBL
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$5.6 / unidade
Ver ficha técnica →K4B4G1646D-BHMA Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Density | 4 Gb |
| Organização da memória | 256M x 16 |
| Taxa de dados | 1866 Mbps |
| Tensão de alimentação | 1.35 V (1.283 V to 1.45 V) |
| Encapsulamento | 96-ball FBGA |
| Temperatura de operação | -40°C to +95°C (TC) |
| Latência CAS | 13 (at 1866 Mbps) |
| Burst Length | 8 and 4 |
| Number of Terminals | 96 |
| Lead-Free | Yes |
| Livre de halogênio | Yes |
| RoHS Compliant | Yes |
| Die Version | D-die |
| Refresh Mode | Auto and Self Refresh |
Configuração de pinos do K4B4G1646D-BHMA
| Pino A1 | VDD — Power supply |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDD — Power supply |
| Pino A8 | DQ4 — Data input/output 4 |
| Pino A9 | DQ5 — Data input/output 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data input/output 6 |
| Pino A12 | DQ7 — Data input/output 7 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ8 — Data input/output 8 |
| Pino B3 | DQ9 — Data input/output 9 |
| Pino B4 | VDD — Power supply |
| Pino B5 | DQ10 — Data input/output 10 |
| Pino B6 | DQ11 — Data input/output 11 |
| Pino B7 | VSS — Ground |
| Pino B8 | DQ12 — Data input/output 12 |
| Pino B9 | DQ13 — Data input/output 13 |
| Pino B10 | VDD — Power supply |
| Pino B11 | DQ14 — Data input/output 14 |
| Pino B12 | DQ15 — Data input/output 15 |
| Pino C1 | VDDQ — DQ power supply |
| Pino C2 | VSSQ — DQ ground |
| Pino C3 | VDDQ — DQ power supply |
| Pino C4 | VSSQ — DQ ground |
| Pino C5 | VDDQ — DQ power supply |
| Pino C6 | VSSQ — DQ ground |
| Pino C7 | VDDQ — DQ power supply |
| Pino C8 | VSSQ — DQ ground |
| Pino C9 | VDDQ — DQ power supply |
| Pino C10 | VSSQ — DQ ground |
| Pino C11 | VDDQ — DQ power supply |
| Pino C12 | VSSQ — DQ ground |
| Pino D1 | A0 — Address input 0 |
| Pino D2 | A1 — Address input 1 |
| Pino D3 | A2 — Address input 2 |
| Pino D4 | A3 — Address input 3 |
| Pino D5 | A4 — Address input 4 |
| Pino D6 | A5 — Address input 5 |
| Pino D7 | A6 — Address input 6 |
| Pino D8 | A7 — Address input 7 |
| Pino D9 | A8 — Address input 8 |
| Pino D10 | A9 — Address input 9 |
| Pino D11 | A10/AP — Address input 10 / Auto-precharge |
| Pino D12 | A11 — Address input 11 |
| Pino E1 | A12 — Address input 12 |
| Pino E2 | A13 — Address input 13 |
| Pino E3 | A14 — Address input 14 |
| Pino E4 | BA0 — Bank address 0 |
| Pino E5 | BA1 — Bank address 1 |
| Pino E6 | BA2 — Bank address 2 |
| Pino E7 | RAS# — Row address strobe |
| Pino E8 | CAS# — Column address strobe |
| Pino E9 | WE# — Write enable |
| Pino E10 | CS# — Chip select |
| Pino E11 | CKE — Clock enable |
| Pino E12 | ODT — On-die termination |
| Pino F1 | CK — Clock positive |
| Pino F2 | CK# — Clock negative |
| Pino F3 | VDD — Power supply |
| Pino F4 | VSS — Ground |
| Pino F5 | VDD — Power supply |
| Pino F6 | VSS — Ground |
| Pino F7 | VDD — Power supply |
| Pino F8 | VSS — Ground |
| Pino F9 | VDD — Power supply |
| Pino F10 | VSS — Ground |
| Pino F11 | VDD — Power supply |
| Pino F12 | VSS — Ground |
| Pino G1 | DM0 — Data mask 0 |
| Pino G2 | DM1 — Data mask 1 |
| Pino G3 | DQS0 — Data strobe 0 |
| Pino G4 | DQS0# — Data strobe 0 complement |
| Pino G5 | DQS1 — Data strobe 1 |
| Pino G6 | DQS1# — Data strobe 1 complement |
| Pino G7 | DQS2 — Data strobe 2 |
| Pino G8 | DQS2# — Data strobe 2 complement |
| Pino G9 | DQS3 — Data strobe 3 |
| Pino G10 | DQS3# — Data strobe 3 complement |
| Pino G11 | VDD — Power supply |
| Pino G12 | VSS — Ground |
| Pino H1 | VSS — Ground |
| Pino H2 | VDD — Power supply |
| Pino H3 | VSS — Ground |
| Pino H4 | VDD — Power supply |
| Pino H5 | VSS — Ground |
| Pino H6 | VDD — Power supply |
| Pino H7 | VSS — Ground |
| Pino H8 | VDD — Power supply |
| Pino H9 | VSS — Ground |
| Pino H10 | VDD — Power supply |
| Pino H11 | VSS — Ground |
| Pino H12 | VDD — Power supply |
Aplicações típicas
K4B4G1646D-BHMA é adequado para 6 aplicaçãos: Embedded Systems, Networking Equipment, Mobile Devices, Industrial Machinery, Medical Devices, Automotive Electronics.
Embedded Systems
The K4B4G1646D-BHMA is ideal for embedded systems requiring high-density, low-power memory. Its 4Gb density and 1.35V operation reduce power consumption, making it suitable for industrial controllers, IoT gateways, and single-board computers. The 1866 Mbps data rate ensures fast data processing, while the 96FBGA package fits compact PCB designs. According to Samsung, it is designed for high-density memory applications in embedded systems.
Recomendado
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the K4B4G1646D-BHMA provides high-bandwidth memory for packet buffering and routing tables. Its 1866 Mbps data rate supports high-throughput data processing, and the 1.35V operation reduces power in always-on network devices. The 96FBGA package allows for dense memory arrays on network line cards. According to Samsung, it is suitable for networking equipment.
Recomendado
Mobile Devices
The K4B4G1646D-BHMA is well-suited for mobile devices like smartphones and tablets due to its low 1.35V operation, which extends battery life. The 4Gb density provides ample memory for multitasking and multimedia applications. The 1866 Mbps data rate ensures smooth performance for apps and games. Its compact 96FBGA package is ideal for space-constrained mobile PCBs. According to Samsung, it is used in mobile phones and tablets.
Recomendado
Industrial Machinery
The K4B4G1646D-BHMA operates over -40°C to +95°C, making it suitable for industrial machinery that experiences extreme temperatures. Its high density and 1866 Mbps data rate support real-time control and data logging. The 1.35V operation reduces power in industrial systems. The 96FBGA package provides reliable solder joints for harsh environments. According to Samsung, it is used in industrial machinery.
Recomendado
Medical Devices
In medical devices such as patient monitors and diagnostic equipment, the K4B4G1646D-BHMA provides reliable, high-density memory for data acquisition and processing. Its low 1.35V operation is critical for battery-powered portable medical devices. The 1866 Mbps data rate supports real-time signal processing. The 96FBGA package is compact for medical device PCBs. According to Samsung, it is used in medical devices.
Recomendado
Automotive Electronics
The K4B4G1646D-BHMA is suitable for automotive electronics such as infotainment systems and ADAS, where high-density memory and low power are essential. Its wide temperature range (-40°C to +95°C) meets automotive requirements. The 1866 Mbps data rate supports high-bandwidth applications like navigation and camera processing. The 96FBGA package is robust for automotive environments. According to Samsung, it is used in automotive electronics.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para K4B4G1646D-BHMA — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | K4B4G1646E-BMK0 | K4B4G1646D-BMK0 | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C |
Principais diferenciais
- D-die process for improved performance (vs K4B4G1646E-BMK0)
- Low voltage operation at 1.35V (vs MT41K256M16HA-125)
- Wide temperature range (vs IS43TR16256AL-125KBL)
Notas de projeto
For reliable operation at 1866 Mbps, follow the PCB layout guidelines in the Samsung datasheet. Ensure proper impedance matching for DQ, DQS, and address/control lines. Use 40-60 ohm single-ended and 80-120 ohm differential impedance. Keep trace lengths matched within 50 mils for DQ/DQS groups. Place decoupling capacitors (0.1uF and 1uF) close to VDD and VDDQ pins to minimize power supply noise.
The K4B4G1646D-BHMA operates at 1.35V, which is lower than standard DDR3 (1.5V). Ensure the power supply can provide adequate current during burst operations. Use a dedicated voltage regulator with low output noise and fast transient response. According to the datasheet, the supply voltage range is 1.283V to 1.45V. Monitor the power supply for droop during high-speed switching.
The K4B4G1646D-BHMA operates over -40°C to +95°C. For high-density memory arrays, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The 96FBGA package has a thermal resistance that depends on PCB copper area. Use thermal vias under the package to improve heat dissipation. According to Samsung, the device is suitable for industrial temperature ranges.
Informações de conformidade
Lead-free and halogen-free per datasheet. RoHS compliant. AEC-Q100 not applicable for memory ICs.
