10AX090S3F45I2SG vs 10AX090S3F45E2LG Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 10AX090S3F45I2SG sa pamamagitan ng Intel at 10AX090S3F45E2LG sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 10AX090S3F45I2SG 10AX090S3F45E2LG
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Series Arria 10 GX Arria 10 GX
Logic Elements 900,000 900,000
Embedded Memory Bits 59,234,304 —
User I/Os 624 —
Process Technology 20 nm —
Core Supply Voltage 0.9 V —
Packhaging 1932-ball FCBGA (F45) 1932-ball FCBGA (F45, 45mm flip-chip BGA)
Uri ng Pagpapasok Surface Mount Surface Mount (BGA)
Temperature Grade Industrial —
Speed Grade I2 S3 (-2 speed grade equivalent)
Transceivers Up to 96 (12.5 Gbps chip-to-chip) 624 (per package aggregate channels)
Hard PCIe IP PCIe Gen3 x8 (backwards compatible to Gen2/Gen1) —
Hard Memory Controllers 2 (DDR4, DDR3, QDRIV, RLDRAM3) —
DSP Blocks Variable-precision, up to ~1.5 TFLOPs FP32 1,518
LVDS Channels Up to 1.6 Gbps —
Tindminan RoHS Compliant Compliant
Adaptive Logic Modules (ALMs) — 339,620
Embedded Memory (bits) — 59,234,304
Maximum Transceiver Data Rate — 17.4 Gbps (GX variant, datasheet ceiling up to 25.78 Gbps on GT)
Process Node — TSMC 20nm
Core Voltage (nominal) — 0.9 V
User I/O Banks — 12
Maximum User I/O — 624
Hanay ng Temperature na Operasyon — 0C to 100C (E2 commercial)
Memory Interfaces — DDR4 up to 2666 MT/s, DDR3, QDR IV, RLDRAM 3

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