H5AN8G8NCJR-XNC vs H5AN8G8NDJR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G8NCJR-XNC sa pamamagitan ng SK hynix at H5AN8G8NDJR sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G8NCJR-XNC | H5AN8G8NDJR |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $30.69 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gbit | — |
| Organisasyon | 1 Gb x 8 | 1G x 8 |
| Rate ng Data | 3200 Mbps (DDR4-3200) | 3200 MT/s |
| Clock Frequency | 1.6 GHz | — |
| Volte ng Pagbibigay | 1.14 V to 1.26 V (1.2 V nominal) | — |
| Packhaging | 78-ball FBGA, 7.5 mm x 11 mm | FBGA-78 (7.5x11 mm) |
| Temperature na Operasyon | 0 C to +85 C | 0°C to +95°C (Tc) |
| Uri ng Pagpapasok | Surface Mount | — |
| Interface | DDR4 (8-bit data interface) | — |
| Architecture | Bank-group based DDR4 | — |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge | — |
| On-Chip Termination | Dynamic ODT | — |
| Calibration | ZQ calibration, write leveling | — |
| Error Handling | CRC function | — |
| Reset | Asynchronous reset | — |
| Data Mask | Data mask function | — |
| Current - Operating | 39 mA | — |
| Current - Standby | 30 mA | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free / Halogen-Free | Yes | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| VDDQ | — | 1.2 V |
| VPP | — | 2.5 V |
| Latensya ng CAS | — | 22 (typical) |
| tRCD | — | 22 ns |
| tRP | — | 22 ns |
| Burst Length | — | 8 and 4 (with burst chop) |
| Self-Refresh Current | — | 30 mA (typical) |
| Active Standby Current | — | 60 mA (typical) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |