H5AN8G8NCJR-XNC vs H5AN8G8NDJR 比較
詳細並排比較 H5AN8G8NCJR-XNC 由 SK hynix 與 H5AN8G8NDJR 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G8NCJR-XNC | H5AN8G8NDJR |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit | — |
| 組織 | 1 Gb x 8 | 1G x 8 |
| 資料速率 | 3200 Mbps (DDR4-3200) | 3200 MT/s |
| Clock Frequency | 1.6 GHz | — |
| 供應電壓 | 1.14 V to 1.26 V (1.2 V nominal) | — |
| 封裝 | 78-ball FBGA, 7.5 mm x 11 mm | FBGA-78 (7.5x11 mm) |
| 工作溫度 | 0 C to +85 C | 0°C to +95°C (Tc) |
| 安裝類型 | Surface Mount | — |
| 介面 | DDR4 (8-bit data interface) | — |
| Architecture | Bank-group based DDR4 | — |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge | — |
| On-Chip Termination | Dynamic ODT | — |
| Calibration | ZQ calibration, write leveling | — |
| Error Handling | CRC function | — |
| Reset | Asynchronous reset | — |
| Data Mask | Data mask function | — |
| Current - Operating | 39 mA | — |
| Current - Standby | 30 mA | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free / Halogen-Free | Yes | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| VDDQ | — | 1.2 V |
| VPP | — | 2.5 V |
| CAS 延遲 | — | 22 (typical) |
| tRCD | — | 22 ns |
| tRP | — | 22 ns |
| Burst Length | — | 8 and 4 (with burst chop) |
| Self-Refresh Current | — | 30 mA (typical) |
| Active Standby Current | — | 60 mA (typical) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |