H5TC4G63AFR-PBA vs K4A8G165WB-BIRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63AFR-PBA sa pamamagitan ng SK hynix at K4A8G165WB-BIRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BIRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5TC4G63AFR-PBA | K4A8G165WB-BIRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | $3.98 | $32.50 |
| Uri ng Memory | DDR3L SDRAM | DDR4 SDRAM |
| Density | 4Gb | 8 Gb |
| Organisasyon | 256M x 16 | 512M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V | — |
| Rate ng Data | 1866 Mbps (PC3L-14900) | 2400 Mbps |
| Packhaging | 96-ball FBGA | 96-FBGA |
| Ball Pitch | 0.8mm | — |
| Number of Banks | 8 | — |
| Burst Length | 8 and 4 (with burst chop) | 8 (BL8) and 4 (BC4) |
| CAS Latency (CL) | 11, 12, 13 | — |
| Hanay ng Temperature na Operasyon | 0°C to +95°C (Tcase) | — |
| Interface | 16-bit I/O | Pseudo-open-drain |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Partial Array Self-Refresh | Yes | — |
| RoHS | Compliant | Compliant |
| Volte ng Pagbibigay | — | 1.2 V |
| Temperature na Operasyon | — | -40°C to +95°C |
| Latensya ng CAS | — | 15, 16, 17 |
| On-Die Termination | — | Yes |
| Refresh | — | Auto-refresh and self-refresh |
| Row Address | — | 16K |
| Column Address | — | 1K |