IPN80R4K5P7ATMA1 vs IPN95R1K2P7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPN80R4K5P7ATMA1 sa pamamagitan ng Infineon at IPN95R1K2P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPN80R4K5P7ATMA1 IPN95R1K2P7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family CoolMOS P7 —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 800 V —
Continuous Drain Current (ID, Tc) 1.5 A —
Power Dissipation (Pd, Tc) 6 W —
On-Resistance (RDS(on), VGS=10V) 4.5 ohm max —
Packhaging PG-SOT223 (surface mount, 3-pin + tab) SOT-223-3 (PG-SOT223)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology CoolMOS Superjunction (SJ) CoolMOS P7 (Super Junction)
Operating Mode Enhancement-mode —
Grade Industrial —
Application Low-power SMPS, flyback converters, LED drivers —
Tindminan RoHS Compliant Compliant
Reel / Tape Packaging Tape & Reel (T/R) —
Drain-to-Source Voltage (V_DSS) — 950 V
Continuous Drain Current (I_D) at T_C — 6 A
Maximum On-Resistance R_DS(on) at V_GS=10V — 1200 mOhm (1.2 Ohm)
Gate Drive Voltage (max R_DS(on)) — 10 V
Power Dissipation (T_C) — 7 W
Bilang ng Pin — 3 (2 + Tab)
Series — CoolMOS P7
Hanay ng Temperature na Operasyon — -55C to +150C
Packaging — Tape & Reel
Part Status — Active

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