IPN80R4K5P7ATMA1 vs IPN95R1K2P7ATMA1 比較
詳細並排比較 IPN80R4K5P7ATMA1 由 Infineon 與 IPN95R1K2P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPN80R4K5P7ATMA1 | IPN95R1K2P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P7 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 800 V | — |
| Continuous Drain Current (ID, Tc) | 1.5 A | — |
| Power Dissipation (Pd, Tc) | 6 W | — |
| On-Resistance (RDS(on), VGS=10V) | 4.5 ohm max | — |
| 封裝 | PG-SOT223 (surface mount, 3-pin + tab) | SOT-223-3 (PG-SOT223) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | CoolMOS Superjunction (SJ) | CoolMOS P7 (Super Junction) |
| Operating Mode | Enhancement-mode | — |
| Grade | Industrial | — |
| Application | Low-power SMPS, flyback converters, LED drivers | — |
| RoHS 狀態 | Compliant | Compliant |
| Reel / Tape Packaging | Tape & Reel (T/R) | — |
| Drain-to-Source Voltage (V_DSS) | — | 950 V |
| Continuous Drain Current (I_D) at T_C | — | 6 A |
| Maximum On-Resistance R_DS(on) at V_GS=10V | — | 1200 mOhm (1.2 Ohm) |
| Gate Drive Voltage (max R_DS(on)) | — | 10 V |
| Power Dissipation (T_C) | — | 7 W |
| 腳位數 | — | 3 (2 + Tab) |
| Series | — | CoolMOS P7 |
| 工作溫度範圍 | — | -55C to +150C |
| Packaging | — | Tape & Reel |
| Part Status | — | Active |