NT5AD512M16C4-JR vs AS4C512M16D4-75BIN Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5AD512M16C4-JR sa pamamagitan ng Nanya Technology at AS4C512M16D4-75BIN sa pamamagitan ng Alliance Memory. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Alliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5AD512M16C4-JR | AS4C512M16D4-75BIN |
|---|---|---|
| Brand | Nanya Technology | Alliance Memory |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $73.75 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Organisasyon | 512M x16 | — |
| Density | 8 Gbit | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Rate ng Data | 1.6 GHz (DDR4-3200) | 2666 Mbps |
| Packhaging | TFBGA-96 | 96-FBGA (7.5x13) |
| Hanay ng Temperature na Operasyon | 0°C to +95°C | — |
| Standby Current | 0.023 A (max) | — |
| Number of Terminals | 96 | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| Laki ng Memory | — | 8 Gbit |
| Memory Organization | — | 512M x 16 |
| Clock Frequency | — | 1.333 GHz |
| Access Time | — | 18 ns |
| Write Cycle Time | — | 15 ns |
| Volte ng Pagbibigay | — | 1.2 V |
| Temperature na Operasyon | — | -40°C to +95°C |
| Uri ng Pagpapasok | — | Surface Mount |
| Interface | — | POD |
| Bilang ng Pins | — | 96 |
| Tindminan RoHS | — | Compliant |
| Mga Karakteristika | — | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration |