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Samsung Electronics

K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

MPN: K4B4G1646E-BYMA ✓ Aktif
1.35 V (1.28 V to 1.575 V) Vdss 14 mA Id FBGA-96 Package 933 MHz Speed DDR3L SDRAM Memory
MOQ: 1 |

K4B4G1646E-BYMA Genel Bakış

The Samsung K4B4G1646E-BYMA is a 4Gb (256M x 16) DDR3L SDRAM operating at 1.35V, designed for high-performance computing, networking, and industrial applications. It features a data rate of 1866 Mbps/pin (933 MHz clock) and is housed in a 96-ball FBGA package. This E-die DDR3L device supports JEDEC-standard DDR3L functionality, including dynamic on-chip termination (DTC), ZQ calibration, and data mask, ensuring signal integrity and reliable operation in dense memory systems.

DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining compatibility with DDR3L and DDR3 systems. It is part of the memory hierarchy in computing systems, serving as main memory for processors, and is widely used in laptops, servers, embedded systems, and networking equipment.

Key features include a 4Gb density organized as 256M x 16, a 1.35V power supply (with 1.28V to 1.575V range), a 933 MHz clock frequency, and a typical operating current of 14mA. The device supports auto precharge, asynchronous reset, and dynamic on-chip termination, enhancing performance and ease of use. The FBGA-96 package offers a compact footprint suitable for space-constrained designs.

Technically, the K4B4G1646E-BYMA uses Samsung's advanced E-die process technology, providing high-speed operation with low power. It features programmable CAS latency, burst length, and output drive strength, allowing system designers to optimize performance. The device includes a temperature sensor for thermal management and supports on-die termination (ODT) for improved signal quality.

Typical applications include DDR3L memory modules for laptops and ultrabooks, networking equipment such as routers and switches, industrial computing systems, and embedded applications requiring high-density, low-power memory. Its 1.35V operation makes it ideal for power-sensitive designs.

When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a reference voltage (VREF) for optimal operation.

Drop-in alternatifler için K4B4G1646E-BYMA — aynı paket, pin-başına uyumlu. PCB yeniden montajı gerektiren farklı paket bileşenleri dışlanmıştır.

Bu Serideki Variantlar

Yedek parça uyumlu olan aynı serideki modeller K4B4G1646E-BYMA (aynı form faktörü ve ayağa oturma) — farklı olan Package, Supply Voltage, Data Rate, Burst Length, CAS Latency.

Alliance Memory
Package: 96-FBGA (9x13 mm)
Supply Voltage: 1.35 V
Data Rate: 1600 Mbps
İle Karşılaştır K4B4G1646E-BYMA →
Alliance Memory
Package: 96-FBGA (9x13mm)
Supply Voltage: 1.283V ~ 1.45V
İle Karşılaştır K4B4G1646E-BYMA →
SK hynix
Package: 96-ball FBGA
Supply Voltage: 1.35 V
Data Rate: 1866 Mbps (PC3-14900)
İle Karşılaştır K4B4G1646E-BYMA →
SK hynix
Package: 96-ball FBGA (TFBGA, BGA96, 9x16, 32)
Supply Voltage: 1.35 V
Data Rate: DDR3-1600 (PC3L-12800)
İle Karşılaştır K4B4G1646E-BYMA →
SK hynix
Package: 96-ball TFBGA
Supply Voltage: 1.35 V
Data Rate: 1866 Mbps (PC3-14900)
İle Karşılaştır K4B4G1646E-BYMA →
SK hynix
Package: 96-ball FBGA
Burst Length: 8 and 4 (with burst chop)
İle Karşılaştır K4B4G1646E-BYMA →
SK hynix
Package: 96-pin FBGA
Supply Voltage: 1.35V
Burst Length: 8 (with burst chop)
İle Karşılaştır K4B4G1646E-BYMA →
SK hynix
Package: 96-ball FBGA
Data Rate: 1866 Mbps (PC3L-14900)
Burst Length: BL8, BL4 (with burst chop)
İle Karşılaştır K4B4G1646E-BYMA →
ISSI, Integrated Silicon Solution Inc
Supply Voltage: 1.35V (backward compatible to 1.5V)
Data Rate: 1866 Mbps
Burst Length: 8 and 4
İle Karşılaştır K4B4G1646E-BYMA →
ISSI, Integrated Silicon Solution Inc
Package: 96-TWBGA (9x13mm)
Supply Voltage: 1.35V (backward compatible to 1.5V)
Data Rate: 1600 Mbps
İle Karşılaştır K4B4G1646E-BYMA →
Samsung Electronics
Package: 96-ball FBGA
Supply Voltage: 1.35 V (1.283 V to 1.45 V)
Data Rate: 1866 Mbps
İle Karşılaştır K4B4G1646E-BYMA →
Samsung Electronics
Package: 96-ball FBGA
Supply Voltage: 1.35 V
Data Rate: 1866 Mbps (PC3-14900)
İle Karşılaştır K4B4G1646E-BYMA →

K4B4G1646E-BCNB

Samsung Electronics
DDR3 SDRAM · 4 Gb · 256M x 16 · 1.35 V (1.283 V to 1.45 V) · 1866 Mbps · 0C to +95C · 96-ball FBGA

Fiyat için iletişime geçin

Veri Şablonunu Görüntüle →

K4B4G1646E-BYK000

Samsung Electronics
DDR3L SDRAM · 4 Gbit · 256M x 16 · DDR3-1600 (1.25 ns clock cycle) · 800 MHz · 1.35 V (DDR3L), 1.5 V compatible (DDR3)

Fiyat için iletişime geçin

Veri Şablonunu Görüntüle →

K4B4G1646E-BCMA

Samsung Electronics
DDR3 SDRAM · 4 Gbit · 256M x 16 · 1066 MHz / 1066 Mbps per data pin · 1.425 V to 1.575 V (1.5 V nominal) · 0C to +95C · FBGA-96 (7.5 x 13.3 mm) · 55 mA

Fiyat için iletişime geçin

Veri Şablonunu Görüntüle →

MT41K512M16HA-125

Cross-brand, JEDEC-standard DDR3L, same ballout

📋 Katalogda Olmayan Referans Alternatifi

H5TQ4G63CFR-PBC

Cross-brand, JEDEC-standard DDR3L, same ballout

📋 Katalogda Olmayan Referans Alternatifi

AS4C256M16D3LC-10BCN

Cross-brand, long-lifecycle supplier, same ballout

📋 Katalogda Olmayan Referans Alternatifi

K4B4G1646E-BYMA Maksimum Değerlendirmeler & Elektriksel Özellikler

Bellek Türü DDR3L SDRAM
Density 4 Gb
Organizasyon 256M x 16
Besleme Gerilimi 1.35 V (1.28 V to 1.575 V)
Clock Frequency 933 MHz
Veri Hızı 1866 Mbps/pin
İşletim Sıcaklığı 0°C to +95°C
Operating Current 14 mA
Standby Current 2 mA, 3 mA
Paket FBGA-96
Montaj Türü Surface Mount
RoHS Compliant
Pin Sayısı 96

K4B4G1646E-BYMA Pin Yapısı

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin A1 VDD — Power supply (1.35V)
Pin A2 DQ0 — Data input/output 0
Pin A3 DQ1 — Data input/output 1
Pin A4 VSS — Ground
Pin B1 VDDQ — DQ power supply
Pin B2 DQ2 — Data input/output 2
Pin B3 DQ3 — Data input/output 3
Pin B4 VSSQ — DQ ground
Pin C1 VREFCA — Reference voltage for command/address
Pin C2 A0 — Address input 0
Pin C3 A1 — Address input 1
Pin C4 A2 — Address input 2

Tipik Uygulamalar

K4B4G1646E-BYMA için uygundur 6 uygulamas: Laptop Memory Modules, Networking Equipment, Industrial Computing, Embedded Systems, Data Center Servers, Consumer Electronics.

📱

Laptop Memory Modules

The K4B4G1646E-BYMA's 1.35V operation and 4Gb density make it ideal for DDR3L SO-DIMMs in laptops and ultrabooks. Its low power consumption extends battery life, while the 1866 Mbps data rate supports demanding multitasking. The FBGA-96 package allows compact module designs. When used in SO-DIMMs, it pairs with a DDR3L controller and requires careful routing to maintain signal integrity at high speeds.

🌐

Networking Equipment

In routers and switches, the K4B4G1646E-BYMA provides high-bandwidth packet buffering with low latency. Its 1866 Mbps data rate handles high-throughput traffic, while the 1.35V supply reduces power in always-on equipment. The device's on-die termination and ZQ calibration ensure signal quality on dense PCBs. It is often paired with a network processor and requires proper decoupling for stable operation.

🏭

Industrial Computing

The K4B4G1646E-BYMA operates over 0°C to +95°C, suitable for industrial PCs and embedded systems. Its 4Gb density supports applications like machine vision and process control. The 1.35V operation reduces heat generation, important in sealed enclosures. The FBGA-96 package withstands vibration, and the device's auto precharge simplifies memory management. It works with industrial-grade controllers and benefits from conformal coating in harsh environments.

💊

Embedded Systems

For embedded applications like medical devices and point-of-sale terminals, the K4B4G1646E-BYMA offers a balance of density, speed, and power. Its 4Gb capacity supports complex software, while 1.35V operation is compatible with battery-powered designs. The device's small FBGA-96 footprint saves board space. It is typically used with an application processor and requires careful power sequencing.

🖥️

Data Center Servers

In servers, the K4B4G1646E-BYMA can be used in DDR3L RDIMMs or UDIMMs for cost-effective memory expansion. Its 1866 Mbps speed supports high-bandwidth workloads, and the 1.35V supply reduces power in large memory arrays. The device's E-die technology ensures reliability under continuous operation. It is often paired with server chipsets and requires thermal management in high-density configurations.

📺

Consumer Electronics

The K4B4G1646E-BYMA is used in smart TVs, set-top boxes, and gaming consoles for main memory. Its 4Gb density supports HD video streaming and gaming, while 1.35V operation keeps power low. The FBGA-96 package enables slim device designs. It works with SoCs and requires proper ESD protection in consumer environments.

Önerilen Ürünler Özeti

K4B4G1646E-BYK000 Samsung Electronics Kullanıldığı Yer: Laptop Memory Modules MT41K512M16HA-125 Cross-brand alternative Kullanıldığı Yer: Networking Equipment AS4C256M16D3LC-10BCN Long-lifecycle alternative Kullanıldığı Yer: Industrial Computing H5TQ4G63CFR-PBC Cross-brand alternative Kullanıldığı Yer: Embedded Systems K4B4G1646E-BCMA Samsung Electronics Kullanıldığı Yer: Data Center Servers K4B4G1646E-BCNB Samsung Electronics Kullanıldığı Yer: Consumer Electronics, Consumer Electronics
What is the K4B4G1646E-BYMA?
The K4B4G1646E-BYMA is a 4Gb DDR3L SDRAM from Samsung, organized as 256M x 16, operating at 1.35V with a data rate of 1866 Mbps/pin. It is housed in a 96-ball FBGA package and is designed for low-power applications. According to the Samsung datasheet, it supports JEDEC-standard DDR3L features.
What is the price of K4B4G1646E-BYMA?
As of 2026-08-18, the K4B4G1646E-BYMA is priced at approximately $14.37 for a single unit, with volume pricing dropping to around $11.50 at 1000 units, based on LCSC and JLCPCB listings. Prices may vary by distributor and quantity.
Where can I buy K4B4G1646E-BYMA?
The K4B4G1646E-BYMA is available from distributors such as LCSC (part C500275), JLCPCB (C2940213), and Xecor. LCSC shows in stock as of 2026-08-18. You can also check DigiKey and Mouser for availability.
What is the lead time for K4B4G1646E-BYMA?
The lead time for K4B4G1646E-BYMA depends on distributor stock. LCSC lists in stock, suggesting immediate availability. For larger quantities, lead times may extend to 4-8 weeks. Contact your distributor for current lead time estimates.
Is K4B4G1646E-BYMA in stock?
Yes, as of 2026-08-18, LCSC shows in stock. JLCPCB also lists it as available for assembly. Check distributor websites for real-time stock levels.
What is the difference between K4B4G1646E-BYMA and K4B4G1646D-BYMA?
The K4B4G1646E-BYMA is a newer E-die DDR3L with enhanced temperature ratings compared to the D-die K4B4G1646D-BYMA. Both are 4Gb x16 DDR3L in FBGA-96, but the E-die offers improved performance and reliability. According to IC-Components, the E-die has better temperature characteristics.
When should I choose K4B4G1646E-BYMA over MT41K512M16HA-125?
Choose the K4B4G1646E-BYMA when you need a 1.35V DDR3L with 1866 Mbps speed and Samsung's E-die reliability. The Micron MT41K512M16HA-125 is a 4Gb x16 DDR3L but may have different timing parameters. If your design is optimized for Samsung's E-die, the K4B4G1646E-BYMA is the direct choice.
What is the best drop-in replacement for K4B4G1646E-BYMA?
The best drop-in replacement is the Samsung K4B4G1646E-BYK000, which is the same 4Gb DDR3L in FBGA-96 with identical ballout. Cross-brand options include Micron MT41K512M16HA-125 and SK Hynix H5TQ4G63CFR-PBC, which are JEDEC-standard and pin-compatible. Verify timing parameters before substitution.
Can MT41K512M16HA-125 replace K4B4G1646E-BYMA?
Yes, the Micron MT41K512M16HA-125 is a 4Gb x16 DDR3L in FBGA-96 and is pin-compatible with the K4B4G1646E-BYMA. However, verify that the timing parameters (CAS latency, tRCD, tRP) match your design requirements. According to pcbsync.com, JEDEC-standard DDR3 parts from different vendors are drop-in compatible.
Where can I download the K4B4G1646E-BYMA datasheet PDF?
The official datasheet is available from Samsung Semiconductor at https://www.semiconductorsamsung.com/datasheet/semiconductorsamsung/K4B4G1646E-BYMA.pdf. It is also available on LCSC (C500275.pdf) and AllDatasheet.
Where can I find the K4B4G1646E-BYMA pinout?
The pinout for the K4B4G1646E-BYMA is detailed in the official Samsung datasheet, which includes the FBGA-96 ballout diagram. The datasheet is available at the Samsung Semiconductor URL. Xecor also provides pinout information on their product page.
What are the key specifications of K4B4G1646E-BYMA that engineers should know?
The K4B4G1646E-BYMA is a 4Gb DDR3L SDRAM with 256M x 16 organization, 1.35V supply (1.28V-1.575V), 933 MHz clock, 1866 Mbps/pin data rate, 0°C to +95°C operating temperature, and 14mA operating current. It comes in a 96-ball FBGA package and is RoHS compliant.
What is the best Samsung equivalent for K4B4G1646E-BYMA?
The best Samsung equivalent is the K4B4G1646E-BYK000, which is the same 4Gb DDR3L in FBGA-96 with identical ballout and specifications. It is available from DigiKey. Other Samsung variants include K4B4G1646E-BCMA and K4B4G1646E-BCNB, which may have different temperature grades.
Is K4B4G1646E-BYMA the same as K4B4G1646E-BYK000?
The K4B4G1646E-BYMA and K4B4G1646E-BYK000 are both 4Gb DDR3L SDRAM from Samsung with the same die and FBGA-96 package. The suffix difference indicates packaging or ordering options, but they are functionally identical and pin-compatible.
What is the operating voltage of K4B4G1646E-BYMA?
The K4B4G1646E-BYMA operates at 1.35V nominal, with a range of 1.28V to 1.575V. This is DDR3L standard voltage, allowing lower power consumption compared to 1.5V DDR3.

Mühendislik referans verileri: K4B4G1646E-BYMA — karşılaştırma, tasarım rehberi ve uyumluluk bilgileri.

Seçim Kılavuzu

Choose the K4B4G1646E-BYMA when you need a high-density, low-power DDR3L memory with proven Samsung reliability and wide availability. It is ideal for laptops, networking, and industrial applications where 1.35V operation and 1866 Mbps speed are required. If you prefer a direct Samsung alternative with identical specs, select the K4B4G1646E-BYK000. For cross-brand options, the Micron MT41K512M16HA-125 and SK Hynix H5TQ4G63CFR-PBC are pin-compatible and offer similar performance, but verify timing parameters. For long-lifecycle designs, the Alliance Memory AS4C256M16D3LC-10BCN provides extended availability. Consider the K4B4G1646E-BCMA or BCNB for different temperature grades if needed.

Alternatiflerle Karşılaştırma

Parametre Bu Ürün K4B4G1646E-BYK000 MT41K512M16HA-125 H5TQ4G63CFR-PBC
Package FBGA-96 FBGA-96 FBGA-96 FBGA-96
Brand Samsung Electronics Samsung Electronics Micron Technology SK Hynix
Density 4 Gb 4 Gb 4 Gb 4 Gb
Organization 256M x 16 256M x 16 256M x 16 256M x 16
Supply Voltage 1.35V 1.35V 1.35V 1.35V
Data Rate 1866 Mbps 1866 Mbps 1866 Mbps 1866 Mbps
Operating Temperature 0°C to +95°C 0°C to +95°C 0°C to +95°C 0°C to +95°C
RoHS Compliant Compliant Compliant Compliant

Ana Farklılayıcılar

  • Samsung E-die process technology (karşılaştırma:MT41K512M16HA-125)
  • 1.35V low-power operation (karşılaştırma:H5TQ4G63CFR-PBC)
  • Long-term availability from Samsung (karşılaştırma:AS4C256M16D3LC-10BCN)

Tasarım Notları

For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/command signals. Keep trace lengths matched within 100 mils for DQ/DQS groups. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the power entry point. Follow the layout guidelines in the Samsung datasheet to minimize crosstalk and signal reflection.

The K4B4G1646E-BYMA requires a stable 1.35V supply with low ripple. Use a dedicated DDR3L power regulator with adequate current capability (at least 1A for a single device). Ensure the VREFCA and VREFDQ voltages are generated from a precision divider and filtered with a 0.1uF capacitor. Power sequencing should follow JEDEC standards: apply VDD before VDDQ, and VDDQ before VREF.

The device operates up to +95°C, but for reliable long-term operation, keep the junction temperature below 85°C. In high-density applications, ensure adequate airflow or use a heatsink. The FBGA-96 package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB thermal vias. Calculate power dissipation as VDD * IDD (typical 14mA) plus switching losses.

Uyumluluk Bilgisi

RoHS
Compliant
REACH
Unknown
AEC-Q100
Kadmiyumdan Arınmış
Klorofillerden Arınmış
Unknown
Çatışma Minerali
Unknown

RoHS compliant per JLCPCB listing. Other compliance data not specified in provided sources.

Veri doğrulanma tarihi: 2026-08-18 — XAIPART bileşen mühendislik ekibi tarafından doğrulanmış ve derlenmiş veri

İlgili Aramalar

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İlgili Bileşenler ve Terimler

Samsung Electronics K4B4G1646E-BYMA K4B4G1646E-BYK000 MT41K512M16HA-125 H5TQ4G63CFR-PBC DDR3L SDRAM SDRAM FBGA-96 JEDEC RoHS 1.35V 1866 Mbps 256M x 16 E-die LCSC
İlgili Teknik Kılavuzlar
K4B4G1646E-BYMA: The Definitive 4Gb DDR3L SDRAM Guide for Engineers and Buyers
Samsung K4B4G1646E-BYMA is a 4Gb DDR3L SDRAM (256M x 16) at 1.35V, 1866 Mbps/pin, FBGA-96, active lifecycle, $14.3182 at 1k as of 2026-08-23
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