MPX10DP vs MPXC2011DT1 比較

詳細並排比較 MPX10DP 由 STMicroelectronics 與 MPXC2011DT1 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MPXC2011DT1 MPXC2011DT1 - 10kPa Differential Pressure Sensor 4-SSIP | NXP

MPXC2011DT1 - 10kPa Differential Pressure Sensor 4-SSIP | NXP

MPXC2011DT1 ✓ 啟用中

規格比較

參數 MPX10DP MPXC2011DT1
品牌 STMicroelectronics NXP Semiconductors
類別 Pressure Sensors Pressure Sensors
生命週期狀態 啟用中 啟用中
Pressure Type Differential Differential
Operating Pressure Range 0 kPa to 10 kPa (0 to 1.45 PSI) 0 kPa to 10 kPa (0 PSI to 1.45 PSI)
Maximum Overload Pressure [DATA_NEEDED: maximum overload pressure] —
輸出類型 Analog Wheatstone bridge (uncompensated) Analog Wheatstone bridge (ratiometric)
Output Voltage Span 0 mV to 35 mV at 3 V excitation —
Supply Voltage (Excitation) 3 V DC typical —
Port Configuration Dual male 0.19 in (4.93 mm) tube, axial —
封裝 / 外殼 4-SIP Module —
安裝類型 Through-Hole Through-hole (PCB mount with side-port tubing)
工作溫度 [DATA_NEEDED: operating temperature range] 0 °C to +85 °C
Bridge Impedance [DATA_NEEDED: input/output bridge resistance] —
Linearity [DATA_NEEDED: linearity %FS] —
Temperature Compensation None (uncompensated) —
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status not in web data]
Media Compatibility Dry gases (non-corrosive) —
Full-Scale Output — 25 mV typical at 10 V excitation
Sensitivity — 2.5 mV/kPa typical
Excitation Voltage — 3 V DC to 10 V DC (10 V nominal)
封裝 — 4-SSIP Chip Pak module, side port
Port Style — Female, 3.25 mm (0.128 in) barbed side port
Termination Style — Through-hole PCB, 4 leads
Compensation — On-chip temperature compensated and calibrated
Technology — Piezoresistive silicon strain gauge
Module Dimensions — 7.6 mm x 12.8 mm nominal

資料表與資源

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