MT40A256M16GE-083E vs H5AN4G6NBJR-UHC 比較
詳細並排比較 MT40A256M16GE-083E 由 Micron Technology 與 H5AN4G6NBJR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron
MT40A256M16GE-083E ✗ 停產規格比較
| 參數 | MT40A256M16GE-083E | H5AN4G6NBJR-UHC |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 停產終止 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| 組織 | 256M x 16 | 256M x 16 |
| Clock Frequency | 1200 MHz (DDR4-2400) | 1.6 GHz |
| 供應電壓 | 1.2 V | — |
| 封裝 | 96-ball FBGA, 9 x 14 mm | FBGA-96 (PBGA-96) |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | Parallel | — |
| Technology | CMOS DRAM | CMOS |
| ECCN | EAR99 | — |
| Country of Origin | China | — |
| 無鹵素 | Compliant | — |
| Lead Free | Yes | — |
| Introduction Date | August 2017 | — |
| Lifecycle | Obsolete / End of Life (per distributor cross-reference data) | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| CAS 延遲 | [DATA_NEEDED: CAS latency at DDR4-2400] | — |
| Refresh | [DATA_NEEDED: refresh rate] | — |
| 記憶體容量 | — | 4 Gbit |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes (DM) |
| Asynchronous Reset | — | Yes (RESET_n) |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes (command/address CRC) |
| RoHS 狀態 | — | Compliant |