H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix
MPN： H5AN8G6NCJR-VKC ✓ 啟用中| 數量 | 單價 | 小計 |
|---|---|---|
| 1 | $79.55 | $79.55 |
| 10 | $75 | $750.00 |
| 100 | $70 | $7,000.00 |
| 500 | $65 | $32,500.00 |
| 1,000 | $60 | $60,000.00 |
H5AN8G6NCJR-VKC 概覽
DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It offers higher speed, lower operating voltage (1.2V vs 1.5V for DDR3), and improved signal integrity through on-die termination (ODT) and data bus inversion (DBI). DDR4 is the industry standard for main memory in servers, desktops, laptops, and embedded systems, providing the bandwidth and capacity required for modern computing workloads.
Key features include a burst length of 8 (BL8) with burst chop (BC4), programmable CAS latency, write leveling, dynamic on-chip termination (Dynamic ODT), ZQ calibration, and CRC (cyclic redundancy check) for data integrity. The device supports auto self-refresh, auto precharge, asynchronous reset, and data mask functions, ensuring reliable operation in demanding environments. It operates over a temperature range of 0°C to +95°C (TC), making it suitable for commercial and industrial applications.
The H5AN8G6NCJR-VKC utilizes advanced CMOS process technology, achieving low power consumption with a typical operating current of 28mA (IDD2N) and 45mA (IDD4R). The 96-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm, enabling high-speed signal routing. The device is lead-free and halogen-free, complying with RoHS and REACH regulations.
Typical applications include server main memory, networking switches and routers, high-performance computing (HPC), and embedded systems requiring high-density, high-bandwidth memory. The 2666 Mbps data rate and 8Gb density make it ideal for memory modules (DIMMs) and system-on-module (SoM) designs.
When designing with this device, ensure proper decoupling of the VDD and VDDQ supplies with 0.1uF and 1uF capacitors placed close to the balls. Follow the DDR4 JEDEC standard (JESD79-4) for signal integrity and layout guidelines, including controlled impedance traces and matched lengths for the data, address, and command buses.
直接替換替代品，適用於 H5AN8G6NCJR-VKC — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： H5AN8G6NCJR-VKC （相同外形與佔位） — 差異在於 Package, Operating Temperature, Data Rate, RoHS Status, Burst Length.
快速比較工具 — 選擇替代零件進行並排比較：
H5AN8G6NDJR-XNC
✗ 缺貨
$55.6818 / 單位
查看資料表 →H5AN8G6NAFR-UHC
✓ 有庫存
$5.7422 / 單位
查看資料表 →K4A8G165WB-BCRC
✗ 缺貨
$12.57 / 單位
查看資料表 →NT5CC256M16ER-EKT
聯絡詢價
查看資料表 →W634GU6RB12I
聯絡詢價
查看資料表 →MT40A1G8SA-075E
📋 參考替代品（不在目錄中）
H5AN8G6NCJR-VKC 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| Density | 8 Gb |
| 組織 | 512M x 16 |
| 資料速率 | 2666 Mbps |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) |
| 工作溫度 | 0°C to +95°C |
| 封裝 | FBGA-96 |
| Operating Current (IDD2N) | 28 mA |
| Operating Current (IDD4R) | 45 mA |
| Burst Length | 8 (BC4) |
| Lead-Free | Yes |
| 無鹵素 | Yes |
| RoHS | Compliant |
H5AN8G6NCJR-VKC 腳位配置
| 腳位 A1 | VDD — Power supply |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | VSS — Ground |
| 腳位 B1 | DQ1 — Data input/output 1 |
| 腳位 B2 | VDDQ — I/O power supply |
| 腳位 B3 | DQ2 — Data input/output 2 |
| 腳位 C1 | DQ3 — Data input/output 3 |
| 腳位 C2 | VSSQ — I/O ground |
| 腳位 C3 | DQ4 — Data input/output 4 |
| 腳位 D1 | DQ5 — Data input/output 5 |
| 腳位 D2 | VDD — Power supply |
| 腳位 D3 | DQ6 — Data input/output 6 |
| 腳位 E1 | DQ7 — Data input/output 7 |
| 腳位 E2 | VSS — Ground |
| 腳位 E3 | DQS0 — Data strobe 0 |
| 腳位 F1 | DQS0# — Data strobe 0 complement |
| 腳位 F2 | VDDQ — I/O power supply |
| 腳位 F3 | DM0 — Data mask 0 |
| 腳位 G1 | VSSQ — I/O ground |
| 腳位 G2 | CK — Clock |
| 腳位 G3 | CK# — Clock complement |
典型應用
H5AN8G6NCJR-VKC 適用於 6 應用s: Server Main Memory, Networking Equipment, High-Performance Computing (HPC), Embedded Systems, Data Center Storage, Telecommunications.
Server Main Memory
The H5AN8G6NCJR-VKC provides 8Gb density and 2666 Mbps data rate, making it ideal for server DIMMs. Its low 1.2V operation reduces power consumption in data centers. The high bandwidth supports virtualization, cloud computing, and big data analytics. When used in RDIMMs, the on-die termination and CRC ensure signal integrity over long traces. The 96-ball FBGA package allows high-density module designs, enabling larger memory capacity per server.
推薦
Networking Equipment
In networking switches and routers, the H5AN8G6NCJR-VKC provides high-bandwidth memory for packet buffering and forwarding tables. Its 2666 Mbps data rate ensures low latency for high-throughput traffic. The auto self-refresh and low power modes help manage thermal budgets in compact chassis. The FBGA-96 package fits space-constrained line cards. The device's CRC and write leveling features enhance reliability in noisy environments.
推薦
High-Performance Computing (HPC)
The H5AN8G6NCJR-VKC supports HPC applications requiring large memory capacity and high bandwidth. Its 8Gb density allows building high-capacity memory pools. The 2666 Mbps data rate provides fast data access for compute-intensive workloads. The low operating voltage reduces power consumption in large clusters. The device's advanced features like dynamic ODT and ZQ calibration ensure stable operation at high speeds.
推薦
Embedded Systems
The H5AN8G6NCJR-VKC is suitable for embedded systems requiring high-density memory, such as industrial PCs and edge computing devices. Its 8Gb density provides ample memory for complex applications. The 0°C to +95°C temperature range covers most embedded environments. The FBGA-96 package is compact for space-limited designs. The device's low power consumption is beneficial for battery-powered or thermally constrained systems.
推薦
Data Center Storage
In data center storage systems, the H5AN8G6NCJR-VKC provides high-bandwidth memory for caching and metadata management. Its 2666 Mbps data rate accelerates storage controllers. The low power consumption helps reduce operational costs. The device's reliability features, such as CRC and auto self-refresh, ensure data integrity. The FBGA-96 package enables high-density storage controller designs.
推薦
Telecommunications
The H5AN8G6NCJR-VKC is used in telecom infrastructure for buffering and processing. Its high bandwidth supports 5G and edge computing workloads. The 1.2V operation reduces power in base stations. The device's wide temperature range and reliability features make it suitable for outdoor equipment. The FBGA-96 package allows compact line card designs.
推薦
推薦產品摘要
工程參考資料，適用於 H5AN8G6NCJR-VKC — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | H5AN8G6NDJR-XNC | K4A8G165WB-BCRC | MT40A1G8SA-075E |
|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 |
| Brand | SK Hynix | SK Hynix | Samsung | Micron |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Data Rate | 2666 Mbps | 3200 Mbps | 2666 Mbps | 2666 Mbps |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Lead-Free | Yes | Yes | Yes | Yes |
主要差異化特點
- Higher speed grade than base part (對比H5AN8G6NCJR-xxC)
- Cross-brand compatibility (對比K4A8G165WB-BCRC)
- Low power consumption (對比MT40A1G8SA-075E)
設計說明
For DDR4 routing, maintain controlled impedance of 40-50 ohms for single-ended signals and 80-100 ohms differential for DQS and CK. Keep trace lengths matched within +/- 10 mils for data groups and +/- 20 mils for address/command. Use ground planes under the FBGA-96 package to minimize noise.
Decouple VDD and VDDQ with 0.1uF and 1uF capacitors placed as close as possible to the balls. Use a solid power plane for VDD and VDDQ. The 1.2V supply should have low impedance across the frequency range of interest to ensure stable operation at 2666 Mbps.
The H5AN8G6NCJR-VKC operates up to +95°C. Ensure adequate airflow or heatsinking in high-density designs. The FBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA. For high-power applications, consider thermal vias under the package.
合規資訊
Lead-free and halogen-free per datasheet. RoHS compliant. Not AEC-Q100 qualified.
