K4A4G085WD-BCRC vs K4A4G085WE-BCRC 比較
詳細並排比較 K4A4G085WD-BCRC 由 Samsung Electronics 與 K4A4G085WE-BCRC 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A4G085WD-BCRC | K4A4G085WE-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Memory Density | 4 Gbit | — |
| 組織 | 512M x 8 | 512M x 8 |
| 記憶體類型 | DDR4 SDRAM (D-die) | DDR4 SDRAM |
| 資料速率 | 2400 Mb/s (PC2400) | 2400 Mbps |
| 供應電壓 | 1.2 V | — |
| 封裝 | FBGA-78 (TFBGA) | FBGA-78 |
| Number of Terminals | 78 | — |
| 介面 | Parallel | Parallel |
| Access Mode | Multi-bank page burst | — |
| 安裝類型 | Surface Mount | Surface Mount |
| CAS 延遲 | [DATA_NEEDED: CAS Latency] | — |
| 工作溫度範圍 | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | 8n / 1X refresh (per JEDEC DDR4) |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | Compliant (per LCSC listing) |
| MSL 等級 | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: Moisture Sensitivity Level] |
| Density | — | 4 Gbit |
| Clock Cycle Time (tCK) | — | 0.833 ns |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Core Voltage (VPP) | — | 2.5 V |
| Process Node Family | — | Samsung E-die |
| Bank Groups | — | 4n prefetch DDR4 architecture |
| 工作溫度 | — | [DATA_NEEDED: Operating Temperature Range] |