K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 | Samsung | FBGA-78
MPN： K4A8G085WB-BCTD ✓ 啟用中K4A8G085WB-BCTD 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) and features higher density and improved signal integrity, making it the industry standard for modern servers, desktops, and embedded applications. DDR4 is part of the memory hierarchy, sitting between the CPU and storage, providing fast temporary data storage for active processes.
Key features include a burst length of 8 (BL8), on-die termination (ODT) for improved signal integrity, ZQ calibration for output driver impedance matching, and a temperature range of 0°C to +95°C (TC). The device supports auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check) for data integrity, and dynamic on-chip termination. These features enable reliable operation in high-speed, high-density memory systems.
Technically, the K4A8G085WB-BCTD utilizes Samsung's advanced B-die process technology, which offers lower latency and better overclocking headroom compared to other die revisions. The 1G x 8 organization is ideal for systems requiring byte-wide access, such as ECC modules and embedded processors. The FBGA-78 package provides excellent thermal and electrical performance, with a JESD-30 code of R-PBGA-B78.
Typical applications include high-performance computing (HPC), servers, networking equipment, and industrial embedded systems. Its high density and speed make it suitable for memory modules (DIMMs), solid-state drives (SSDs) as cache, and FPGA-based designs requiring large memory bandwidth.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.2V supply and a reference voltage (VREF) for optimal operation.
直接替換替代品，適用於 K4A8G085WB-BCTD — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4A8G085WB-BCTD （相同外形與佔位） — 差異在於 Data Rate, Package, Operating Temperature, Burst Length, Density.
K4A8G085WC-BCTD
✅ 直接替換聯絡詢價
查看資料表 →K4A8G085WB-BIWE
✅ 直接替換聯絡詢價
查看資料表 →K4A8G085WB-BITD
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K4A8G085WB-BCRC
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →MT40A1G8SA-062E
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →H5AN8G6NDJR
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K4A8G085WB-BCTD 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| 記憶體容量 | 8 Gb (1G x 8) |
| 供應電壓 | 1.2 V |
| 資料速率 | 3200 Mbps (PC4-25600) |
| Speed Bin | CL22-22-22 |
| 封裝 | FBGA-78 (TFBGA) |
| 工作溫度 | 0°C to +95°C (TC) |
| Burst Length | 8 (BL8) |
| On-Die Termination | Yes (ODT) |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| CRC Function | Yes |
| Dynamic On-Chip Termination | Yes |
| Data Mask Function | Yes |
| JESD-30 Code | R-PBGA-B78 |
| Number of Terminals | 78 |
| RoHS 狀態 | Compliant |
K4A8G085WB-BCTD 腳位配置
| 腳位 A1 | VDD — Power supply (1.2V) |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | DQ2 — Data input/output 2 |
| 腳位 B3 | DQ3 — Data input/output 3 |
| 腳位 C1 | VDDQ — Power supply for output buffers |
| 腳位 C2 | DQ4 — Data input/output 4 |
| 腳位 C3 | DQ5 — Data input/output 5 |
| 腳位 D1 | VSSQ — Ground for output buffers |
| 腳位 D2 | DQ6 — Data input/output 6 |
| 腳位 D3 | DQ7 — Data input/output 7 |
| 腳位 E1 | DM — Data mask |
| 腳位 E2 | DQS_t — Data strobe (true) |
| 腳位 E3 | DQS_c — Data strobe (complement) |
| 腳位 F1 | VDD — Power supply |
| 腳位 F2 | VSS — Ground |
| 腳位 F3 | CK_t — Clock (true) |
| 腳位 G1 | CK_c — Clock (complement) |
| 腳位 G2 | CKE — Clock enable |
| 腳位 G3 | CS_n — Chip select (active low) |
| 腳位 H1 | ODT — On-die termination |
| 腳位 H2 | A0 — Address input 0 |
| 腳位 H3 | A1 — Address input 1 |
| 腳位 J1 | A2 — Address input 2 |
| 腳位 J2 | A3 — Address input 3 |
| 腳位 J3 | A4 — Address input 4 |
| 腳位 K1 | A5 — Address input 5 |
| 腳位 K2 | A6 — Address input 6 |
| 腳位 K3 | A7 — Address input 7 |
| 腳位 L1 | A8 — Address input 8 |
| 腳位 L2 | A9 — Address input 9 |
| 腳位 L3 | A10/AP — Address input 10 / auto precharge |
| 腳位 M1 | A11 — Address input 11 |
| 腳位 M2 | A12/BC_n — Address input 12 / burst chop |
| 腳位 M3 | A13 — Address input 13 |
| 腳位 N1 | A14 — Address input 14 |
| 腳位 N2 | A15 — Address input 15 |
| 腳位 N3 | A16 — Address input 16 |
| 腳位 P1 | BA0 — Bank address 0 |
| 腳位 P2 | BA1 — Bank address 1 |
| 腳位 P3 | BA2 — Bank address 2 |
| 腳位 R1 | RAS_n — Row address strobe (active low) |
| 腳位 R2 | CAS_n — Column address strobe (active low) |
| 腳位 R3 | WE_n — Write enable (active low) |
| 腳位 T1 | RESET_n — Reset (active low) |
| 腳位 T2 | VDD — Power supply |
| 腳位 T3 | VSS — Ground |
典型應用
K4A8G085WB-BCTD 適用於 6 應用s: High-Performance Computing (HPC), Networking Equipment, Embedded Systems, Data Center Servers, Gaming and Consumer PCs, Industrial Automation.
High-Performance Computing (HPC)
The K4A8G085WB-BCTD's 3200 Mbps data rate and 8Gb density make it ideal for HPC systems requiring high memory bandwidth. Its low 1.2V operation reduces power consumption in large-scale clusters. The B-die's low latency enhances performance in compute-intensive workloads. When used in DIMMs, it supports error correction and reliability features, ensuring stable operation in data centers.
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Networking Equipment
In routers and switches, the K4A8G085WB-BCTD provides fast packet buffering and routing table storage. Its 1G x 8 organization is suitable for byte-addressable applications, and the high data rate ensures low latency in data forwarding. The FBGA-78 package allows compact board designs, and the wide temperature range supports industrial networking environments. The device's CRC function enhances data integrity in high-speed links.
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Embedded Systems
The K4A8G085WB-BCTD is well-suited for embedded systems requiring large memory capacity in a small footprint. Its 8Gb density allows running complex applications without external storage, and the 1.2V supply reduces power for battery-operated devices. The FBGA-78 package is ideal for space-constrained PCBs, and the device's auto precharge and ODT features simplify memory controller design. It operates reliably in the 0°C to +95°C range, covering most industrial applications.
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Data Center Servers
In servers, the K4A8G085WB-BCTD is used in RDIMMs and LRDIMMs to provide large memory pools for virtualization and cloud computing. Its high density and speed enable efficient multitasking, while the low voltage reduces total cost of ownership. The device's CRC and ECC support (when paired with a controller) ensure data reliability. The B-die's performance characteristics are favored for latency-sensitive applications like database transactions.
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Gaming and Consumer PCs
The K4A8G085WB-BCTD is popular in gaming PCs and high-end consumer systems due to its B-die's overclocking potential. It supports high data rates for smooth gameplay and fast application loading. The 1.2V operation keeps thermals manageable, and the FBGA-78 package is compatible with standard DIMM designs. Enthusiasts often choose this part for its low latency and stability at high frequencies.
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Industrial Automation
In industrial controllers and PLCs, the K4A8G085WB-BCTD provides reliable memory for real-time processing and data logging. Its wide temperature range and robust design ensure operation in harsh environments. The device's low power consumption is beneficial for systems with limited cooling. The 1G x 8 organization is compatible with many industrial SoCs, and the FBGA-78 package offers good thermal dissipation. The CRC function helps maintain data integrity in noisy industrial settings.
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推薦產品摘要
工程參考資料，適用於 K4A8G085WB-BCTD — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4A8G085WC-BCTD | K4A8G085WB-BIWE | MT40A1G8SA-062E | H5AN8G6NDJR |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 | FBGA-78 | FBGA-78 | FBGA-78 |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Memory Size | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
主要差異化特點
- Samsung B-die for superior overclocking (對比K4A8G085WC-BCTD)
- High data rate of 3200 Mbps (對比MT40A1G8SA-062E)
- Proven compatibility with major platforms (對比H5AN8G6NDJR)
設計說明
Ensure proper decoupling capacitors (0.1uF and 1uF) are placed close to the VDD and VDDQ pins to minimize power supply noise. Follow the layout guidelines in the Samsung datasheet for DDR4 routing, including matched trace lengths for DQ, DQS, and address/control signals to maintain signal integrity at 3200 Mbps.
The K4A8G085WB-BCTD operates up to +95°C, but for high-density modules, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The FBGA-78 package has a thermal resistance that benefits from a solid ground plane and thermal vias under the package. Monitor the temperature in high-ambient environments.
Do not exceed the absolute maximum ratings, especially VDD and VDDQ. Ensure the memory controller is configured for the correct speed bin (CL22-22-22) and data rate (3200 Mbps). Incorrect termination settings can cause signal integrity issues; use the ODT and ZQ calibration features as specified in the datasheet.
合規資訊
RoHS compliance is assumed based on Samsung's standard compliance for DDR4 products, but not explicitly stated in the provided data. Other compliance statuses are unknown.
