H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix
MPN: H5AN8G6NDJR-UHC ✓ نشطH5AN8G6NDJR-UHC نظرة عامة
DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3 with higher density, lower operating voltage (1.2V vs 1.5V), and improved signal integrity through on-die termination (ODT) and data bus inversion. As a volatile memory type, it stores data in capacitors that require periodic refreshing, and it transfers data on both edges of the clock signal, doubling throughput. DDR4 is the industry standard for main memory in servers, desktops, laptops, and high-performance embedded systems.
Key features include auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (Dynamic ODT), ZQ calibration, CRC (cyclic redundancy check), and write leveling. These features enhance signal integrity, power efficiency, and reliability in high-speed systems. The device supports a maximum operating temperature of 85°C and is lead-free and halogen-free, compliant with RoHS.
Architecturally, the H5AN8G6NDJR-UHC uses a 1x-nm class process technology, achieving high density with low power consumption. The 16-bit I/O configuration (x16) is ideal for applications requiring moderate bus width with high capacity per chip, reducing the number of devices needed on a memory module. The 96-ball FBGA package with a rectangular shape (JESD-30 code R-PBGA-B96) provides excellent thermal and electrical performance.
Typical applications include DDR4 memory modules (UDIMM, SODIMM, RDIMM), embedded computing systems, networking equipment, industrial PCs, and high-performance computing platforms. The 3200Mbps speed grade supports demanding workloads such as data analytics, virtualization, and real-time signal processing.
When designing with this device, ensure proper VDD (1.2V) and VDDQ decoupling with 0.1uF and 1uF capacitors placed close to the balls. Follow the JEDEC DDR4 layout guidelines for impedance matching and signal integrity, and use the ZQ pin with a 240-ohm resistor to ground for calibration.
بدائل مباشرة لـ H5AN8G6NDJR-UHC — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع H5AN8G6NDJR-UHC (نفس عامل الشكل والبصمة) — يختلف في Package, Data Rate, Operating Temperature, Burst Length, Refresh.
H5AN8G6NDJR-XNC
✅ بديل مباشر✗ غير متوفر
$55.6818 / وحدة
عرض ورقة البيانات ←H5AN8G6NAFR-UHC
✅ بديل مباشر✓ متوفر في المخزون
$5.7422 / وحدة
عرض ورقة البيانات ←H5AN8G6NCJR-VKC
✅ بديل مباشر✗ غير متوفر
$60 / وحدة
عرض ورقة البيانات ←K4A8G165WC-BCRC
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←MT40A512M16JY-075E
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←AS4C512M16D4A-62BCN
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5AN8G6NDJR-UHC الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR4 SDRAM |
| Density | 8 Gb |
| التنظيم | 512M x 16 |
| Speed Grade | 3200 Mbps (PC4-25600) |
| Supply Voltage (VDD) | 1.2 V |
| Supply Voltage (VDDQ) | 1.2 V |
| Number of Terminals | 96 |
| العلبة | FBGA-96 (13x7.5 mm) |
| Package Shape | RECTANGULAR |
| JESD-30 Code | R-PBGA-B96 |
| Maximum Operating Temperature | 85 °C |
| Minimum Operating Temperature | 0 °C |
| RoHS | Compliant |
| Lead-Free | Yes |
| خالٍ من الهالوجين | Yes |
| Additional Features | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling |
تكوين أطراف H5AN8G6NDJR-UHC
| دبوس A1 | VDD — Power supply (1.2V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ2 — Data input/output 2 |
| دبوس B3 | DQ3 — Data input/output 3 |
| دبوس C1 | VDDQ — I/O power supply (1.2V) |
| دبوس C2 | DQ4 — Data input/output 4 |
| دبوس C3 | DQ5 — Data input/output 5 |
| دبوس D1 | VSSQ — I/O ground |
| دبوس D2 | DQ6 — Data input/output 6 |
| دبوس D3 | DQ7 — Data input/output 7 |
| دبوس E1 | DM0 — Data mask 0 |
| دبوس E2 | DQS0 — Data strobe 0 |
| دبوس E3 | DQS0# — Data strobe 0 complement |
| دبوس F1 | VDD — Power supply (1.2V) |
| دبوس F2 | VSS — Ground |
| دبوس F3 | VDDQ — I/O power supply (1.2V) |
| دبوس G1 | A0 — Address input 0 |
| دبوس G2 | A1 — Address input 1 |
| دبوس G3 | A2 — Address input 2 |
| دبوس H1 | A3 — Address input 3 |
| دبوس H2 | A4 — Address input 4 |
| دبوس H3 | A5 — Address input 5 |
| دبوس J1 | A6 — Address input 6 |
| دبوس J2 | A7 — Address input 7 |
| دبوس J3 | A8 — Address input 8 |
| دبوس K1 | A9 — Address input 9 |
| دبوس K2 | A10/AP — Address input 10 / Auto-precharge |
| دبوس K3 | A11 — Address input 11 |
| دبوس L1 | A12/BC — Address input 12 / Burst chop |
| دبوس L2 | A13 — Address input 13 |
| دبوس L3 | A14 — Address input 14 |
| دبوس M1 | A15 — Address input 15 |
| دبوس M2 | A16 — Address input 16 |
| دبوس M3 | BA0 — Bank address 0 |
| دبوس N1 | BA1 — Bank address 1 |
| دبوس N2 | BG0 — Bank group 0 |
| دبوس N3 | BG1 — Bank group 1 |
| دبوس P1 | CK — Clock |
| دبوس P2 | CK# — Clock complement |
| دبوس P3 | CKE — Clock enable |
| دبوس R1 | CS# — Chip select |
| دبوس R2 | ODT — On-die termination |
| دبوس R3 | RAS# — Row address strobe |
| دبوس T1 | CAS# — Column address strobe |
| دبوس T2 | WE# — Write enable |
| دبوس T3 | RESET# — Reset |
| دبوس U1 | ZQ — Calibration reference |
| دبوس U2 | VDD — Power supply (1.2V) |
| دبوس U3 | VSS — Ground |
التطبيقات النموذجية
H5AN8G6NDJR-UHC مناسب لـ 6 التطبيقs: Server Main Memory, Networking Equipment, Industrial PCs, High-Performance Computing, Embedded Systems, Consumer Electronics.
Server Main Memory
The H5AN8G6NDJR-UHC provides 8Gb density and 3200Mbps bandwidth, ideal for RDIMM and LRDIMM modules in servers. Its high speed supports data-intensive workloads like virtualization and cloud computing. The 1.2V operation reduces power consumption in data centers, while features like CRC and write leveling ensure reliable operation at high frequencies. When used in a dual-rank module, multiple devices can be combined to achieve capacities up to 64GB, meeting the demands of enterprise applications.
موصى به
Networking Equipment
In routers, switches, and network appliances, the H5AN8G6NDJR-UHC offers the high bandwidth needed for packet processing and routing tables. The 3200Mbps data rate enables fast lookup and forwarding, while the 8Gb density supports large routing tables and buffering. The device's low power consumption is critical for power-over-Ethernet (PoE) switches where thermal budgets are tight. Its FBGA-96 package allows compact board designs, and the auto self-refresh feature reduces standby power, extending equipment life in always-on network infrastructure.
موصى به
Industrial PCs
For industrial PCs used in automation and control, the H5AN8G6NDJR-UHC provides reliable, high-speed memory in harsh environments. With a maximum operating temperature of 85°C, it suits factory floors and outdoor installations. The 8Gb density supports complex control algorithms and data logging, while the 3200Mbps speed ensures real-time responsiveness. The device's robust design, including CRC and write leveling, maintains data integrity in electrically noisy industrial settings. Its FBGA-96 package is compatible with standard industrial motherboards, enabling easy integration.
موصى به
High-Performance Computing
In HPC clusters and workstations, the H5AN8G6NDJR-UHC delivers the memory bandwidth required for scientific simulations and data analytics. The 3200Mbps speed grade supports high-throughput computing, while the 8Gb density enables large datasets to reside in memory. The device's low latency and high reliability are essential for parallel processing workloads. Its 1.2V operation reduces power in large-scale systems, and the FBGA-96 package allows high-density DIMM designs. Features like dynamic ODT improve signal integrity at multi-GHz speeds, ensuring stable operation in demanding HPC environments.
موصى به
Embedded Systems
The H5AN8G6NDJR-UHC is suitable for high-end embedded systems such as medical imaging, military, and aerospace applications. Its 8Gb density and 3200Mbps speed support real-time image processing and complex algorithms. The device's commercial temperature range (0-85°C) is adequate for many embedded environments, and its low power consumption is beneficial for battery-powered or thermally constrained designs. The FBGA-96 package is compact, enabling small form-factor boards. Features like auto self-refresh and ZQ calibration ensure reliable operation in embedded systems with varying power conditions.
موصى به
Consumer Electronics
In high-end consumer devices like gaming PCs and workstations, the H5AN8G6NDJR-UHC provides the memory performance needed for gaming, content creation, and multitasking. The 3200Mbps speed ensures smooth frame rates and fast application loading, while the 8Gb density supports large games and creative software. The device's low power consumption is beneficial for laptops, extending battery life. Its FBGA-96 package is standard for SODIMM modules, enabling easy upgrades. Features like write leveling and dynamic ODT enhance stability in consumer systems with varying memory configurations.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ H5AN8G6NDJR-UHC — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | H5AN8G6NDJR-XNC | H5AN8G6NAFR-UHC | H5AN8G6NCJR-VKC | K4A8G165WC-BCRC | MT40A512M16JY-075E | AS4C512M16D4A-62BCN |
|---|---|---|---|---|---|---|---|
| Package | FBGA-96 (13x7.5mm) | FBGA-96 (13x7.5mm) - same | FBGA-96 (13x7.5mm) - same | FBGA-96 (13x7.5mm) - same | FBGA-96 (13x7.5mm) - same | FBGA-96 (13x7.5mm) - same | FBGA-96 (13x7.5mm) - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | Samsung | Micron | Alliance Memory |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Speed Grade | 3200 Mbps | 3200 Mbps | 3200 Mbps | 2666 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Max Operating Temperature | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
أبرز الفروقات
- Higher speed grade than VKC variant (مقابلH5AN8G6NCJR-VKC)
- Same-brand drop-in compatibility (مقابلH5AN8G6NDJR-XNC)
- Cross-brand availability (مقابلK4A8G165WC-BCRC)
ملاحظات التصميم
Decouple VDD and VDDQ with 0.1uF and 1uF capacitors placed as close as possible to the FBGA balls. Use a solid power plane for VDD and VDDQ to minimize impedance. The 1.2V supply should be regulated within +/-5% per JEDEC DDR4 specifications. Ensure adequate bulk capacitance on the module to handle transient currents during read/write bursts.
Follow JEDEC DDR4 layout guidelines for impedance matching (typically 40-50 ohms single-ended, 80-100 ohms differential). Route DQ, DQS, and address/control signals with matched trace lengths to minimize skew. Use ground planes between signal layers to reduce crosstalk. Place the ZQ pin's 240-ohm resistor to ground close to the device, as specified in the datasheet.
Use the dynamic ODT feature to optimize signal integrity by adjusting termination impedance during reads and writes. Enable write leveling to compensate for clock-to-strobe skew. Use the CRC feature to detect data corruption on the data bus. Ensure the memory controller is configured for the correct speed grade (3200Mbps) and timing parameters from the datasheet.
معلومات الامتثال
RoHS compliant, lead-free, and halogen-free per SK Hynix datasheet. REACH and conflict minerals status not specified in provided data.
