MOSFETs
Products (157)
IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon
The Infineon IRFR024NTRPBF is an N-channel HEXFET power MOSFET rated at 55 V VDS, 17 A continuous ID, and 75 mOhm maximum on-resistance, housed in a TO-252-3 (DPAK / SC-63) surface-mount package. It uses Infineon's fifth-generation HEXFET process to achieve extremely low RDS(on) per silicon area and is supplied on tape and reel (TR suffix) with lead-free (PbF) terminations. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently switch or amplify power in electronic circuits. The IRFR024NTRPBF belongs to the broader N-channel enhancement-mode MOSFET family, which sits within the discrete semiconductor power-switch hierarchy (MOSFET -> transistor -> discrete semiconductor). It is specifically engineered for low- to medium-frequency switching, where its low gate charge (Qg = 13.3 nC typical) and 55 V drain-source rating suit DC-DC conversion, motor drive, and relay-replacement functions in non-automotive industrial and consumer systems. Key specifications include a maximum drain-source voltage (VDS) of 55 V, continuous drain current (ID) of 17 A at TC = 25 C, pulsed drain current of 60 A, maximum on-resistance of 75 mOhm at VGS = 10 V, gate threshold voltage (VGS(th)) of 2.0 V to 4.0 V, and a maximum junction temperature of 175 C. The DPAK surface-mount package has a junction-to-ambient thermal resistance (theta_JA) of approximately 50 C/W on a standard JEDEC 1-square-inch pad, with a junction-to-case rating (theta_JC) of 3.3 C/W enabling direct PCB heat-sinking via the drain tab. Typical applications include DC-DC buck/boost converters, low-voltage motor drivers, solenoid and relay drivers, LED backlight switching, battery protection circuits in 12 V lead-acid systems, and general-purpose power switches in industrial and consumer equipment. The 55 V rating provides sufficient margin above the 24 V industrial bus and 12 V automotive transient environment for many systems, though for harsh load-dump environments a 60 V or 100 V part is preferred. When designing with this part, calculate worst-case power dissipation as PD = ID^2 x RDS(on) x (1 + TJ derating factor) and verify that the resulting junction temperature stays below the 175 C maximum. The exposed drain tab doubles as both pin 2 (electrical) and a thermal pad; a sufficiently large copper pour (>= 1 sq inch) is critical to achieving the rated continuous current without thermal limiting. This page synthesizes distributor pricing, parametric cross-reference data, and practical PCB-layout guidance beyond what appears in the manufacturer datasheet, helping procurement engineers and design engineers evaluate the IRFR024NTRPBF alongside true drop-in alternatives in the DPAK footprint.
IRFR3607TRPBF - 75V 56A N-Channel MOSFET | Infineon | DPAK
The IRFR3607TRPBF is a 75V N-Channel HEXFET Power MOSFET from Infineon Technologies (originally International Rectifier), supplied in a TO-252AA (DPAK) surface-mount package. It delivers a continuous drain current of 56A (bond-wire limited, 80A calculated at Tc) and a power dissipation of 140W, targeting high-efficiency synchronous rectification in switch-mode power supplies (SMPS). A power MOSFET is a field-effect transistor designed to switch significant power levels by controlling drain-to-source current via a gate field. Power MOSFETs sit within the discrete semiconductor family alongside diodes, thyristors, and IGBTs, and serve as the primary switching elements in DC-DC converters, motor drives, and power supplies. Synchronous rectification MOSFETs like this device replace Schottky diodes to cut conduction losses at low output voltages. Key specifications include a drain-to-source breakdown voltage of 75V, an ultra-low on-state resistance of 9 mOhm at VGS=10V, ID=46A, a total gate charge of 56 nC, a maximum gate-to-source voltage of +/-20V, and a gate threshold voltage of 4V. The device offers fully characterized capacitance and avalanche SOA, improving robustness in inductive load switching. Thermal resistance is 1.0 C/W junction-to-case. The HEXFET architecture provides low RDS(on) and fast switching, minimizing gate-driver requirements and conduction losses. Pricing is approximately $0.29 (LCSC, as of 2026-08-29) to $2.26 per unit (Infineon, as of 2026-08-29), with over 5400 units in stock at Infineon. Typical applications include synchronous rectification in SMPS, hard-switched and high-frequency DC-DC converters, motor control, and battery management systems in server, telecom, and industrial power stages. The device is RoHS compliant and lead-free (Pb-free suffix PBF, JESD-609 e3). Design tip: drive the gate with 10V for lowest on-resistance, and use a large copper pour on the drain tab to manage the 140W dissipation headroom.
IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon
The Infineon IRFR3710ZTRLPBF is an N-channel HEXFET power MOSFET rated at 100 V VDS, 42 A continuous drain current (at Tc) and 140 W power dissipation, housed in a surface-mount TO-252AA (DPAK) package. It uses Infineon's latest silicon processing to deliver an extremely low on-resistance per silicon area of 18 mΩ (max RDS(on)), making it one of the most efficient 100 V N-MOSFETs in DPAK packaging. What is an N-channel HEXFET power MOSFET? A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied. The HEXFET process is a proprietary Infineon (formerly International Rectifier) hexagonal-cell planar technology that minimizes on-resistance per unit die area. In a broader taxonomy: power MOSFET -> discrete semiconductor -> semiconductor -> electronic component. N-channel MOSFETs are preferred for low-side switching because they offer lower RDS(on) than equivalently sized P-channel parts, making them the default choice for synchronous rectification, motor drive and DC-DC conversion. Key features of this part include 175°C maximum junction temperature, fast switching speed, improved repetitive avalanche rating, 69 nC total gate charge, and an Avalanche Energy Rating (EAS) of 150 mJ. The 100 V drain-source breakdown voltage and 42 A continuous drain current make it suitable for high-current switching applications operating from 12 V, 24 V or 48 V rails. The DPAK (TO-252AA) surface-mount package provides a low thermal resistance path through the tab to the PCB copper pour, enabling 140 W power dissipation with appropriate board layout. Its 3-pin (2+tab) configuration matches the industry-standard DPAK footprint used by hundreds of similar 100 V MOSFETs, simplifying PCB design. Typical applications include DC-DC converter primary switches, synchronous rectification in switch-mode power supplies, motor control H-bridges, solenoid drivers, and automotive ECU loads. Designers often select this part for 12 V/24 V automotive and industrial systems where high current handling and rugged avalanche performance are required. When designing with this MOSFET, prioritize a low-inductance gate-drive loop and a sufficiently large PCB copper area under the tab to keep junction temperature within SOA. The 18 mΩ on-resistance means conduction losses at 20 A are roughly 7.2 W; combine this with switching losses to confirm thermal headroom. This page synthesizes distributor pricing, drop-in DPAK alternatives, and practical thermal/layout notes that go beyond what the bare datasheet provides, enabling faster design decisions.
IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon
The Infineon IRFR3710ZTRPBF is an N-channel HEXFET power MOSFET rated at 100 V drain-source voltage and 56 A continuous drain current (at 25 °C), housed in a surface-mount TO-252AA (DPAK) package. It uses Infineon's advanced process technology to deliver extremely low on-resistance per silicon area, with a maximum RDS(on) of 18 mOhm at VGS = 10 V, making it well suited for high-efficiency switching applications. The device operates from a standard 10 V gate drive and is rated for 140 W continuous power dissipation at Tc = 25 °C. A power MOSFET is a voltage-controlled semiconductor switch that uses the gate field effect to modulate current flow between the drain and source terminals. Within the discrete semiconductor taxonomy, MOSFETs belong to the field-effect transistor family and serve as the fundamental building block of switched-mode power supplies, motor drives, and synchronous rectification stages. The DPAK (TO-252AA) package is one of the most widely adopted surface-mount outlines for medium-power MOSFETs because its exposed thermal pad provides a low thermal resistance path while keeping the PCB footprint compact. Key features of the IRFR3710ZTRPBF include a 175 °C maximum junction operating temperature for high ambient or pulsed-power environments, fast switching speed suitable for high-frequency converters, an improved repetitive avalanche rating for inductive load switching, and a logic-level-friendly 10 V VGS(th) typical gate threshold. The low RDS(on) of 18 mOhm directly reduces conduction losses and improves thermal performance in continuous-current paths such as low-side switches and synchronous rectifiers. Architecturally, the device uses Infineon's HEXFET cell structure, a planar/vertical DMOS design optimized for low figure-of-merit (RDS(on) × Qg) and rugged avalanche capability. This combination delivers strong efficiency in hard-switched topologies and resilience against voltage transients induced by motor windings or transformer leakage inductance. Typical applications include DC-DC buck/boost converters, synchronous rectification in isolated power supplies, motor drive H-bridges, solenoid and relay drivers, battery protection circuits, and hot-swap controllers. The DPAK footprint also makes it attractive for space-constrained industrial and telecom power designs. When designing with this MOSFET, ensure the gate driver can source and sink the Qg charge quickly to minimize switching losses, and observe SOA limits at high VDS and high drain current. A low-impedance gate-drive loop and adequate PCB copper under the thermal pad are required to realize the rated 140 W dissipation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IRFR5505TRLPBF - P-Ch 55V 18A 110mOhm DPAK MOSFET | Infineon
The Infineon IRFR5505TRLPBF is a P-Channel enhancement-mode power MOSFET rated at -55 V VDS, -18 A continuous drain current, and 110 mOhm maximum on-resistance, housed in a surface-mount TO-252AA (DPAK) package. It uses Infineon's IR MOSFET™ fifth-generation HEXFET® process to deliver low RDS(on) per silicon area and fast switching, suited for high-efficiency power switching. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that conducts current between drain and source when the gate is biased. P-channel MOSFETs conduct with the source at a higher potential than the drain, which simplifies high-side load switching by allowing the gate drive to be referenced to ground. The IRFR5505 belongs to the power MOSFET -> discrete semiconductor -> power management hierarchy, and is widely used as a load switch, synchronous rectifier, or low-side/-high-side switch in DC-DC conversion stages. Key specifications include VDS = -55 V, ID = -18 A (Tc), RDS(on) = 110 mOhm max at VGS = -10 V, total gate charge of 21.3 nC, and a continuous power dissipation of 57 W at Tc = 25 °C. The device is rated for an operating junction temperature of -55 °C to +175 °C, and is offered in a lead-free DPAK (TO-252AA) footprint that is footprint-compatible with industry-standard DPAK land patterns. The 'PBF' suffix confirms lead-free / RoHS compliance. The architecture uses Infineon's proprietary HEXFET® cell geometry, a fifth-generation planar stripe layout that minimizes cell pitch while increasing channel density per die area. This translates to low conduction loss and high avalanche ruggedness, with low thermal resistance of approximately 50 °C/W junction-to-case enabling thermal management via the DPAK tab and PCB copper area. The fast switching speed combined with low gate charge makes it suitable for high-frequency PWM stages above 100 kHz. Typical applications include DC-DC converter high-side switches, polarity-reversal protection (ideal-diode OR-ing), load management in battery-powered systems, motor drive H-bridges, and power-rail switching in industrial automation and telecom hardware. It is also commonly deployed in power-OR'ing circuits for redundant supplies and as a synchronous rectifier in low-to-medium power buck converters. When designing with this part, observe the SOA (Safe Operating Area) limits and ensure the gate drive voltage swing (VGS) is sufficient to fully enhance the device. Linear-mode operation above the pulsed current rating will quickly exceed thermal limits; switch-mode operation is recommended for high-current paths. The tab is electrically tied to the drain, so the PCB copper pad must be sized to handle continuous current and thermal dissipation.
IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon
The Infineon IRFR5505TRPBF is a P-channel power MOSFET rated at -55 V VDS and -18 A continuous drain current, using Infineon's fifth-generation HEXFET technology in a TO-252AA (DPAK) surface-mount package. It delivers an ultra-low on-resistance of 110 mOhm max at VGS = -10 V and a total gate charge of 21.3 nC, achieving an extremely low RDS(on) per silicon area. A P-channel MOSFET is a type of field-effect transistor in which the conducting channel is formed by positively charged carriers (holes) when a negative gate-source voltage is applied. P-channel devices occupy a distinct branch of the broader MOSFET family (which includes N-channel MOSFETs) within the discrete-semiconductor category, sitting under the wider umbrella of power-switching transistors and semiconductor switches. Their inherent high-side switching simplicity eliminates the charge-pump or bootstrap circuitry required by N-channel devices in many topologies, at the cost of higher RDS(on) for a given die size. Key features include a maximum continuous drain current of -18 A at TC = 25 C, pulsed drain current of -72 A, and a maximum power dissipation of 57 W at TC = 25 C. The TO-252AA package provides a low thermal resistance (junction-to-case) of 2.2 C/W, enabling compact designs without external heatsinking at moderate loads. The device is rated for an operating junction temperature range of -55 C to +175 C and includes an avalanche-rated single-pulse capability. The IRFR5505TRPBF utilizes advanced process technology that combines low on-resistance per silicon area with fast switching speeds and ruggedized device design. This combination provides an extremely efficient and reliable device for use in a wide variety of applications including DC-DC converters, motor drives, and load switching where P-channel high-side switching is preferred. The DPAK package is optimized for surface-mount manufacturing and offers an exposed drain tab that doubles as the thermal pad. Typical applications include high-side load switching in industrial 24V/36V systems, P-channel synchronous rectifier replacements, battery protection and reverse-polarity blocking in portable equipment, and DC motor control. The wide operating voltage range and avalanche ruggedness also suit automotive ECU loads and power-rail OR-ing. When designing with this device, ensure the gate-source voltage stays within the +/-20 V absolute maximum to prevent oxide rupture. Use a gate resistor (typically 10-100 ohm) to limit ringing, and add a TVS or Zener clamp on the gate if the gate drive exceeds +/-20 V during transients. Verify SOA at the operating VDS and ID combination before deployment, particularly when switching inductive loads. This page synthesizes distributor pricing, drop-in same-package alternatives, parametric comparison tables, and practical design notes not found in the manufacturer datasheet alone.
IRFR6215TRLPBF - 150V P-Ch HEXFET MOSFET, 13A, DPAK | Infineon
The Infineon IRFR6215TRLPBF is a -150V single P-channel HEXFET power MOSFET in a TO-252AA (DPAK) surface-mount package rated for 13A continuous drain current at Tc and 110W power dissipation at Tc. Built on Fifth Generation HEXFET technology, it pairs a 580 mOhm maximum on-resistance at VGS = -10V with 44 nC typical total gate charge to deliver low conduction loss and fast switching in high-side and load-switch topologies. A P-channel MOSFET is a voltage-controlled device in which the source and drain terminals carry negative-polarity current relative to the source (the channel conducts when the gate is pulled below the source). MOSFETs sit one level above BJTs in the power-switching taxonomy (MOSFET -> power transistor -> discrete semiconductor) and are favored over BJTs for high-frequency switching because they are voltage-driven rather than current-driven, eliminating continuous base current and dramatically shrinking driver losses. Key features include -150V VDS breakdown that provides generous transient headroom for 48V telecom, industrial bus, and offline-aux rails; an industry-standard DPAK footprint with an exposed drain tab for direct PCB thermal spreading; -20V maximum VGS rating with internal ESD protection; and a 175 C maximum operating junction temperature for harsh-environment survivability. The 580 mOhm maximum RDS(on) at VGS = -10V minimizes conduction loss in steady-state load-switch applications, while 44 nC Qg allows modest gate drivers to switch the device at moderate PWM frequencies. Typical applications include high-side switching in 48V telecom and industrial bus systems, DC load management in battery-powered equipment, polarity-protection and OR-ing circuits, motor brake and slow-decay dissipation, and synchronous-rectifier replacements for PNP pass transistors in linear-regulator upgrades. The Infineon IRFR6215 family uses the same DPAK land pattern as industry-standard N-channel parts, simplifying PCB reuse for designers porting from PNP pass elements to modern MOSFET switches. When designing with this part, observe the VGS rating: the gate must never exceed +/-20V, so a gate-resistor plus optional Zener clamp is recommended when driven by a higher-voltage gate drive. Thermal management requires copper spreading under the drain tab; a minimum 1 square inch of 2 oz copper keeps the junction within safe limits at 2-3W steady dissipation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement - but do not duplicate - the manufacturer datasheet.
IRFR6215TRPBF - 150V P-Channel HEXFET MOSFET, 13A | Infineon
The Infineon IRFR6215TRPBF is a fifth-generation HEXFET P-channel power MOSFET rated at 150 V VDS, 13 A continuous drain current (Tc), and 110 W power dissipation (Tc), housed in a surface-mount TO-252AA (DPAK) package. This single P-channel device uses Infineon's advanced processing techniques to achieve an extremely low on-resistance per silicon area of 0.295 ohm maximum, balancing conduction loss and switching performance. A P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled device in which the channel is formed by p-type semiconductor material, allowing current to flow when the gate is pulled below the source. P-channel MOSFETs sit in the same taxonomy as their N-channel siblings, both belonging to the power MOSFET > MOSFET > discrete semiconductor > semiconductor hierarchy. P-channel parts are commonly used as high-side switches because they can be driven by a low-side referenced gate signal, simplifying the bootstrap or charge-pump circuitry required by N-channel high-side drivers. Key features include a 0.295 ohm maximum on-resistance at VGS = -10 V, 44 nC total gate charge, fast switching speed, and a ruggedized HEXFET cell design that has been production-proven across multiple generations. The device's 150 V drain-source breakdown provides ample margin for 48 V telecom rails, 60 V industrial bus systems, and offline flyback auxiliary circuits. The DPAK (TO-252AA) surface-mount package exposes the die to a copper tab on the PCB, enabling 110 W dissipation with proper footprint design. The IRFR6215 uses a fifth-generation HEXFET cell with a stripe-cell planar DMOS architecture, providing a strong figure-of-merit (FOM = RDS(on) x Qg) and proven avalanche ruggedness. The gate threshold is specified in the standard -2 V to -4 V range, and the device is fully characterized for both continuous and pulsed operation. The P-channel polarity allows direct high-side switching without a bootstrap circuit, reducing overall BOM count. Typical applications include load switches, power management in industrial and telecom 48 V systems, battery protection circuits, motor drive H-bridges (high-side position), and DC-DC converter synchronous rectifiers. Designers value this part for its balance of voltage rating, current handling, and DPAK footprint compatibility with standard reflow profiles. When designing with this device, ensure that the PCB copper pad under the DPAK tab is sized to handle the desired power dissipation, and that the gate drive is referenced to the source pin (not ground) to maintain proper VGS enhancement. A gate-source resistor of 10 kohm or higher is recommended to prevent inadvertent turn-on from dv/dt-induced Miller coupling. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single reference for sourcing and substitution decisions.
IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon
The Infineon IRFR9024NTRLPBF is a P-Channel enhancement-mode HEXFET power MOSFET rated at -55 V VDS, -11 A continuous drain current (Tc), and 175 mOhm maximum on-resistance at VGS = -10 V, housed in a surface-mount TO-252AA (DPAK) package with a 38 W power dissipation rating. The part ships on a 13-inch tape-and-reel with left orientation and is built on Infineon's fifth-generation HEXFET process which targets the lowest RDS(on) per silicon area in a P-channel die. The LPBF suffix denotes lead-free, RoHS-compliant terminal finish suitable for modern reflow profiles. The "TRL" infix indicates the specific reel orientation used during automated pick-and-place loading. What is a P-channel power MOSFET? A P-channel MOSFET is a type of field-effect transistor where the channel is formed by holes (positive charge carriers) rather than electrons. P-channel devices use a negative gate-source voltage to turn on and are commonly used as high-side switches because they can be driven directly from a logic-level signal referenced to ground, simplifying gate drive circuitry compared to N-channel high-side switches that require a charge pump or bootstrap. P-channel MOSFETs sit within the broader category of power MOSFETs (MOSFET -> discrete semiconductor -> power transistor) and are essential building blocks in power management, load switching, battery protection, and motor control applications. Key features include an industry-standard DPAK (TO-252) surface-mount footprint, an ultra-low on-resistance per silicon area characteristic of Generation-5 HEXFET technology, fast switching performance for PWM and DC-DC converter topologies, and a ruggedized body diode suitable for inductive loads. The device's enhancement-mode operation requires a negative VGS to conduct, simplifying gate drive in high-side P-channel switch configurations where pulling the gate to ground turns the device on. The IRFR9024NTRLPBF utilizes Infineon's proprietary HEXFET stripe-cell geometry that minimizes cell pitch while maximizing channel density per unit area. This results in the lowest specific on-resistance (RDS(on) x area) in its voltage class, reducing conduction losses and enabling higher current handling or smaller PCB footprint compared to older planar P-channel MOSFETs. Typical applications include high-side load switching in 12 V / 24 V automotive and industrial systems, battery protection and reverse-polarity blocking in portable equipment, DC-DC converter synchronous-rectifier high-side switches, motor driver H-bridges, and power-OR-ing circuits in redundant supply architectures. The -55 V rating comfortably exceeds the maximum nominal rail voltages of 24 V industrial or 12 V automotive systems with substantial transient margin. When designing with this device, ensure that the gate-source voltage stays within the absolute maximum rating of +/-20 V and that the SOA curve is respected during switching transients. A gate pull-up resistor to the source pin ensures the device stays off when the gate driver is in a high-impedance state, preventing accidental turn-on from leakage or dv/dt coupling. This page synthesizes distributor pricing, drop-in alternatives sourced from manufacturer cross-reference data, and practical design notes that go beyond the manufacturer datasheet's parameter tables.
IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon
The Infineon IRFR9024NTRPBF is a fifth-generation P-Channel HEXFET power MOSFET rated for -55V VDS and -11A continuous drain current (Tc) in a surface-mount TO-252AA (DPAK) package. Housed in a 3-pin DPAK outline, it delivers a maximum on-resistance of 175 mOhm at VGS = -10V and a typical total gate charge of 12.7 nC, providing a strong balance between conduction loss and switching speed for low-to-medium frequency power switching. A P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier device whose carrier polarity is holes (positive charge). P-Channel MOSFETs sit within the broader family of power transistors -> field-effect transistors -> MOSFETs -> discrete semiconductors. They are commonly used as high-side switches where an N-Channel driver would require a charge pump, simplifying gate-drive circuitry in load-switch and battery-protection applications. Key features of the IRFR9024NTRPBF include advanced process technology for low RDS(on) per silicon area, a maximum continuous drain current of -11A at 25C case temperature, 38W maximum power dissipation (Tc), and an avalanche-rated body diode for inductive switching. The device is rated for operating junction temperatures from -55C to +175C, making it suitable for harsh thermal environments. The TO-252AA (DPAK) surface-mount package provides a low thermal resistance path to the PCB copper pad. Architecturally, the IRFR9024NTRPBF uses Infineon's proprietary HEXFET fifth-generation cell structure, which optimizes the trade-off between specific on-resistance and gate charge. The P-Channel die is housed in a standard DPAK outline with the industry-standard pinout of Gate (pin 1), Drain (pin 2, tab), and Source (pin 3), allowing drop-in compatibility with numerous cross-brand equivalents. Typical applications include high-side load switches in industrial control, battery protection and OR-ing in portable equipment, DC fan and motor speed control, power-rail inverters, and general-purpose power management in consumer and automotive 12V/24V subsystems. The P-Channel topology simplifies high-side switching without needing a bootstrap supply. When designing with this part, ensure the gate-source drive provides at least -10V for full enhancement, and keep the dv/dt loop between drain and source compact to limit ringing. The TO-252AA tab must be soldered to a copper pour of at least 1 square inch for the rated 38W power dissipation.
IRFS3107TRLPBF - 75V 230A N-Channel MOSFET, 3mOhm | Infineon
The IRFS3107TRLPBF is an N-channel power MOSFET from Infineon Technologies designed for high-efficiency power conversion. It features a maximum drain-to-source voltage (VDS) of 75V, a continuous drain current (ID) of 195A at case temperature (Tc), a power dissipation of 370W (Tc), and a very low on-state resistance (RDS(on)) of 3mOhm max. The device is housed in a D2PAK (TO-263, TO-263AB) surface-mount package and is RoHS-compliant (lead-free, PBF suffix). A power MOSFET is a type of field-effect transistor optimized for switching high currents and voltages. Operating in enhancement mode, it requires a positive gate-to-source voltage to conduct. Power MOSFETs sit within the discrete semiconductor family (alongside diodes, thyristors, and IGBTs) and form the switching backbone of power management systems such as DC-DC converters, motor drives, and battery protection circuits. Key differentiating features include the 3mOhm RDS(on), which minimizes conduction losses at high load currents; a total gate charge (Qg) of 160nC, which enables efficient high-frequency switching; and avalanche energy rating (EAS) of 300mJ for ruggedness. The device is built on International Rectifier (now Infineon) HEXFET IR MOSFET technology, known for robust body diode behavior and reliability in hard-switched topologies. Per the manufacturer datasheet, the IRFS3107TRLPBF targets high-efficiency synchronous rectification in switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), and high-speed power switching circuits. Its low RDS(on) and fast switching make it well suited to hard-switched, high-frequency circuits where both efficiency and thermal performance are critical. Typical applications include server power supplies, telecom rectifiers, and UPS systems. The 75V rating accommodates 48V bus architectures with headroom, while the 195A (Tc) current capability handles demanding loads. Designers must supply adequate gate drive (10V drive for specified RDS(on)) and manage heat sinking via PCB copper. For best results, use a gate driver able to source/sink enough current to move the 160nC gate charge quickly, and connect the D2PAK thermal tab to a large copper pour to keep junction temperature in check at high currents.
IRL540NPBF - 100V 36A N-Channel HEXFET MOSFET TO-220
The Infineon IRL540NPBF is a 100V, 36A N-channel HEXFET power MOSFET in a TO-220AB through-hole package. It uses logic-level gate drive with a maximum on-resistance (RDS(on)) of 44 milliohms, a continuous drain current of 36 A at Tc, and total gate charge of 49.3 nC, making it suitable for switching applications up to about 140 W of dissipation. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to commutate current between the drain and source terminals. Power MOSFETs belong to the discrete semiconductor family, sitting between signal-level transistors and high-power IGBTs. They dominate applications below 600 V thanks to their fast switching, easy gate drive, and high input impedance. The IRL540NPBF specifically is a logic-level device: its gate can be driven from 4 V Vgs onward, allowing direct control from microcontrollers, gate drivers, or 5 V logic rails without a charge pump. Key differentiating features include a 100 V VDS rating that provides ample headroom for 48 V telecom, automotive 12 V/24 V, and battery-powered systems, and a 49.3 nC Qg that enables switching frequencies from 100 kHz to 1 MHz in DC-DC and motor drive circuits. The TO-220AB package allows hand-solderable through-hole mounting and provides a thermal resistance around 62 C/W junction-to-case, with a typical maximum power dissipation of 140 W at 25 C case temperature. The device is built on Infineon's HEXFET planar process technology, which combines a vertical DMOS structure with a polysilicon gate for low on-resistance per unit area. Its avalanche-rated design withstands unclamped inductive switching transients, important for motor and solenoid loads where back-EMF pulses occur at turn-off. The logic-level gate threshold (typically 1 V to 2 V, max 2 V to 2.5 V specified in datasheet) lets designers omit level-shift circuitry. Typical applications include low-voltage DC motor drives, PWM speed controllers, solenoid and relay drivers, synchronous-rectifier stages in low-side switch positions, LED drivers, and high-side switches in 24 V industrial systems. It is also widely used in e-bike and scooter controllers, audio amplifier output stages, and battery protection circuits. When designing with the IRL540NPBF, observe the SOA curve carefully: at high VDS combined with high ID, the device can only handle pulsed operation. A gate-source Zener clamp of 16 V is recommended for protection against Vgs overstress. Layout should keep the gate loop short to minimize ringing during switching. This page synthesizes distributor pricing, parametric alternatives, and practical design notes not found in the manufacturer datasheet alone.
IRLHS6242TRPBF - 20V N-CH HEXFET MOSFET, 11.7mΩ | Infineon
The Infineon IRLHS6242TRPBF is a 20V single N-Channel HEXFET Power MOSFET optimized for low-voltage, high-frequency switching in an ultra-compact 6-pin PQFN 2mm x 2mm (DFN2020) package. It features a maximum on-resistance of 11.7 mΩ at VGS = 4.5V and a logic-level gate drive that can also be driven from 2.5V. The device is rated for 10A continuous drain current (Ta) and 12A continuous drain current (Tc), making it well-suited for power-dense DC/DC converters and battery-powered portable designs where PCB area is at a premium. A HEXFET power MOSFET is a specific Infineon/International Rectifier family of N-channel enhancement-mode MOSFETs built on a proprietary trench-gate silicon process that minimizes conduction losses and gate charge simultaneously. Within the broader semiconductor taxonomy, a HEXFET belongs to the power MOSFET class, which itself sits under discrete semiconductors and ultimately under power management. The IRLHS6242 specifically targets applications requiring the absolute smallest footprint with true logic-level drive, which historically forced designers into less efficient 8- or 6-ball BGA DFN parts from other vendors. Key features include a 14 nC total gate charge, ±12V VGS rating, and qualification to JEDEC standards for the broadest possible distribution-channel compatibility. The exposed pad (EP) on the underside of the PQFN package provides a low thermal-resistance path directly into the PCB copper pours, enabling 1.98W dissipation in free air and 9.6W with case-controlled cooling. This makes the device appropriate for compact synchronous buck converters, USB Type-C power path switches, and DC motor inverters under 12V. The device architecture pairs a small die with a high-performance leadframe and bottom-exposed thermal pad; combined with the low gate charge, this allows switching frequencies in the MHz range without excessive driver losses. The 2.5V-capable gate threshold unlocks direct drive from modern microcontrollers without a separate gate-driver IC, simplifying the BOM for low-voltage, low-power rails. Typical applications include battery charging and discharging switches, system load switches in mobile and wearable devices, low-voltage DC motor drivers, and high-frequency buck/boost converter synchronous rectifiers. According to the manufacturer description, the part is also designed for inverter stages below 20V. Designers should keep gate-drive traces short and provide adequate PCB copper under the exposed pad for thermal relief; for high-current loads, multiple thermal vias into an internal copper plane are recommended.
IRLL024NTRPBF - 55V 4.4A N-Channel HEXFET MOSFET | Infineon
The Infineon IRLL024NTRPBF is a single N-Channel HEXFET power MOSFET utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area, packaged in a surface-mount SOT-223 with an enlarged heat-sinking tab. Key parameters are V(BR)DSS = 55 V, continuous drain current ID = 3.1 A (Ta) / 4.4 A pulsed, and R-DS(on) = 0.065 ohm, with a logic-level gate threshold enabling direct drive from 5 V or 3.3 V microcontrollers. A HEXFET power MOSFET is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) optimized by International Rectifier (now part of Infineon) using a hexagonal cell layout that maximizes channel density per unit area. MOSFETs are voltage-controlled switches belonging to the broader class of discrete semiconductors and the power MOSFET family; they sit hierarchically under transistors, discrete semiconductors, and finally active electronic components. In any power-conversion or load-switching design, the MOSFET functions as the key switching element between a controller IC and the actual load. This device's advanced process technology delivers ultra-low on-resistance, fast switching speed, and a ruggedized device design that operates reliably up to 175 degrees C junction temperature. The SOT-223 footprint is fully surface-mount compatible with vapor-phase, infrared, or wave soldering and provides roughly 1 W of power dissipation in a typical surface-mount land pattern, while still permitting up to about 4.4 A pulsed drain current thanks to the enlarged tab acting as a heat sink. The IRLL024NTRPBF architecture is built around Infineon's standard HEXFET planar stripe-cell process combined with a logic-level gate oxide that guarantees full enhancement at V-GS = 4.5 V. This makes the part exceptionally well suited to direct microcontroller GPIO drive without requiring a gate-driver IC or charge pump, while still preserving the ruggedness and avalanche energy rating expected of a 55 V industrial-grade MOSFET. Typical applications include automotive electronic fuel injection, active suspension, power doors/windows/seats, cruise control, airbag modules, dc-dc converters, and relay/load replacements in 12 V and 24 V systems. The logic-level gate also makes the part attractive as a low-side switch for battery management, LED drivers, and small motor control in compact PCB designs. When designing with the IRLL024NTRPBF, observe that continuous current is thermally limited - derate to about 0.6 A at 100 degrees C and verify that the SOT-223 tab is soldered to a copper pour of at least 1 square inch to stay below the 1 W dissipation envelope. The logic-level gate allows direct MCU drive, but adding a small gate-source resistor (10-100 ohm) is recommended to suppress ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical thermal and PCB design notes not found in the manufacturer datasheet, providing a single engineering reference for sourcing and qualifying the IRLL024NTRPBF.
IRLL2705TRPBF - 55V N-Channel HEXFET MOSFET | Infineon
The Infineon IRLL2705TRPBF is a fifth-generation HEXFET N-channel power MOSFET rated at 55 V VDS, 3.8 A continuous drain current (Ta) and 5.2 A peak ID, housed in a surface-mount SOT-223 package with logic-level gate drive. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to efficiently switch or amplify electrical signals in power conversion circuits. Within the broader semiconductor taxonomy, MOSFETs fall under discrete semiconductors -> transistors -> FETs -> power MOSFETs, and serve as the primary switching element in DC-DC converters, motor drivers, load switches, and battery protection circuits. The IRLL2705TRPBF belongs to Infineon's HEXFET family, which uses advanced process technology to minimize RDS(on) per unit silicon area. Key specifications include a maximum drain-to-source voltage of 55 V, continuous drain current of 3.8 A at 25 deg C ambient, peak pulsed current up to 5.2 A, ultra-low RDS(on) of 40 mOhm at VGS=10 V, and a total gate charge of 32 nC. The logic-level gate drive allows direct interfacing with 5 V microcontrollers and 3.3 V logic without requiring a gate driver stage, simplifying circuit design and reducing BOM cost. The HEXFET fifth-generation architecture combines advanced processing techniques with a ruggedized device design, achieving extremely low on-resistance per silicon area while maintaining fast switching speed. Built-in dynamic dv/dt rating improves reliability in switching-mode power supply circuits, and the device supports ease of paralleling for higher current applications. The SOT-223 package offers a balance between compact size and thermal dissipation, with a center tab that can be soldered to the PCB copper pour for improved heat spreading. Typical applications for the IRLL2705TRPBF include DC-DC buck and boost converters, low-voltage motor control circuits, battery protection and load switching in portable electronics, LED drivers, and relay/solenoid replacement circuits. The logic-level gate drive makes it particularly attractive for direct microcontroller control in IoT and battery-powered designs where auxiliary gate-driver ICs would be undesirable. When designing with this part, ensure the gate-source voltage remains within the rated VGS limits and that adequate thermal management is provided through PCB copper area. The SOT-223 center tab should be soldered to a sufficient copper pour for heat dissipation. Compared to a DPAK-packaged alternative, the SOT-223 footprint saves board space but offers lower continuous current capability. This page synthesizes distributor pricing, SOT-223 drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing actionable information for both component selection and PCB layout planning.
IRLML0030TRPBF - 30V N-Channel HEXFET MOSFET | Infineon
The Infineon IRLML0030TRPBF is a 30 V N-channel HEXFET power MOSFET housed in a Micro3 / SOT-23 surface-mount package, rated for 5.3 A continuous drain current and 27 mOhm maximum on-resistance. Optimized for 5 V gate-drive (logic-level) operation, it is built on Infineon's IR MOSFET process and delivers low gate charge (3.6 nC typical) for high-frequency switching. What is a logic-level N-channel MOSFET? It is a discrete semiconductor switch whose gate threshold is designed low enough (typically below 2.5 V) to be driven directly from low-voltage logic outputs (3.3 V or 5 V microcontrollers, gate drivers) without a separate charge pump. MOSFETs sit in the hierarchy: power MOSFET -> discrete semiconductor -> active component. Logic-level parts eliminate the level-shift stage that older 10 V-threshold parts required, simplifying design and shrinking PCB area. Key features include a 1.3 W power dissipation rating on the standard FR-4 board, industry-standard Micro3/SOT-23 footprint for multi-vendor compatibility, JEDEC-qualified process, and optimized switching loss. The exposed lead frame on the Micro3 package provides moderate thermal performance for its size, sufficient for load-switch and DC-DC tasks where continuous current stays below ~2 A. Per the Infineon datasheet, the part is qualified for wave-solder profiles. Typical applications include DC-DC buck converter synchronous rectifier stages, battery protection / load switch circuits in portable electronics, low-voltage motor and solenoid drivers, and LED driver high-side switches. The 27 mOhm RDS(on) at 4.5 V VGS keeps conduction loss low in 5 V rails, while the small Qg of 3.6 nC enables switching frequencies above 1 MHz for compact point-of-load converters. When designing with this part, derate continuous current by at least 30% relative to the 5.3 A Ta rating because PCB copper area dominates thermal performance in SOT-23 layouts. Keep the gate-drive trace short and add a gate-source resistor (10-100 kOhm) to prevent unwanted turn-on from dv/dt coupling. This page synthesizes Infineon datasheet parameters, distributor pricing tiers, drop-in alternatives in the same Micro3 footprint, and practical layout notes not consolidated in the original datasheet, delivering an at-a-glance engineering brief for new designs.
IRLML2030TRPBF - 30V N-Ch HEXFET MOSFET, 2.7A | Infineon
The Infineon IRLML2030TRPBF is a 30 V single N-channel HEXFET power MOSFET in a Micro3 (SOT-23) surface-mount package, rated for 2.7 A continuous drain current (Ta) and 1.3 W power dissipation. It uses Infineon's IR MOSFET technology, optimized for 5 V gate-drive (logic-level) operation with a maximum on-resistance of 100 mOhm at VGS = 10 V and 154 mOhm at VGS = 4.5 V. The device is qualified to JEDEC standards, lead-free, halogen-free, RoHS compliant, and MSL 1. A HEXFET power MOSFET is a single-chip N-channel enhancement-mode field-effect transistor that uses a hexagonal cell layout to minimize on-resistance per unit silicon area. In the power-management taxonomy, this device sits within discrete semiconductors -> MOSFETs -> N-channel enhancement MOSFETs -> logic-level MOSFETs, serving as the lowest-cost, smallest-footprint switching element for sub-3 A loads. The Micro3 (SOT-23) package is the de-facto industry standard for portable and handheld switching applications. Key features of the IRLML2030TRPBF include an industry-standard Micro3 (SOT-23) pinout that is multi-vendor compatible, a maximum drain-source voltage of 30 V, a maximum gate-source voltage of ±20 V, and a low typical gate charge of 1.0 nC. Logic-level VGS(th) (typically 1.0-2.5 V) makes the part directly drivable from 3.3 V and 5 V microcontrollers, eliminating the need for a separate gate-driver IC. Wave-solder compatibility simplifies PCB assembly. Internally, the device uses Infineon's planar HEXFET cell architecture with a vertical DMOS structure. Compared with lateral MOSFETs in similar packages, the HEXFET structure achieves lower RDS(on) at a given die size. The 1.0 nC total gate charge keeps driver-side switching losses small at low PWM frequencies (<1 MHz), which is the typical operating regime for battery and load-switch applications. Avalanche-rated and JEDEC-qualified for industrial temperature ranges. Typical applications include battery protection in single-cell Li-ion packs, load switching in portable electronics, DC-DC converter low-side switches, USB power-path management, and small motor or solenoid drivers. The 30 V rating comfortably handles 12 V bus rails with substantial transient headroom. When designing with the IRLML2030TRPBF, place a gate-source resistor (10 kOhm typical) to prevent floating-Gate turn-on during hot-plug events. A TVS diode on VDS is recommended if the load is inductive. Thermal management at 1.3 W in SOT-23 requires attention to copper-pour area on the drain tab. This page synthesizes Infineon datasheet parameters, distributor pricing as of 2026-09-11, drop-in SOT-23 alternatives from verified cross-reference data, and SOT-23 PCB design notes not aggregated on any single vendor page.
IRLML2803TRPBF - 30V N-Ch MOSFET, 1.2A, SOT-23 | Infineon
The Infineon IRLML2803TRPBF is a 30V N-Channel logic-level power MOSFET housed in a Micro3 / SOT-23 surface-mount package, delivering 1.2A continuous drain current at 25°C and a maximum on-resistance of 250 mΩ at VGS=4.5V. Built on Infineon's proprietary IR MOSFET Generation V technology, it is optimized for low-voltage, high-frequency switching applications where compact PCB footprints and logic-level gate drive are required. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to amplify or switch electronic signals. N-Channel MOSFETs conduct when a positive voltage is applied to the gate relative to the source, making them the dominant choice for low-side switching in power management, motor control, and load switching. The IRLML2803TRPBF belongs to the logic-level gate-drive subcategory, allowing direct drive from 3.3V or 5V microcontrollers without a gate-driver stage, which simplifies BOM and saves PCB area. Its position in the broader taxonomy is: power MOSFET -> discrete semiconductor -> transistor -> semiconductor. Key features include a gate threshold voltage around 1V, ultra-low on-resistance of 250 mΩ at VGS=4.5V, low gate charge of 3.3 nC typical, fast switching speeds, and 540 mW maximum power dissipation. The Generation V IR MOSFET technology delivers a Figure of Merit (RDS(on) × Qg) that competes favorably with later-generation devices, and the device is rated for continuous operation up to 1.2A at the SOT-23 copper pad's typical thermal conditions. Typical applications include DC-DC converter synchronous rectification, low-side load switching, battery protection circuits, USB power switches, motor driver bridges, and power-rail ORing. Its 1.2A current rating comfortably drives small brushed DC motors, solenoids, and LED driver strings in portable equipment, while the SOT-23 footprint suits space-constrained designs such as wearables, IoT nodes, and handheld instruments. When designing with this device, observe the maximum power dissipation of 540 mW and provide adequate copper land area under the drain tab. Use a gate resistor of 10Ω to 100Ω to limit ringing, and keep the gate drive slew rate within the datasheet SOA. For new designs above 2A or requiring lower RDS(on), consider Generation VII or later devices such as IRLML0030 / IRLML2030, which share the same SOT-23 pinout and offer superior switching performance. This page consolidates distributor pricing, drop-in alternatives, pin-level guidance, and design notes that go beyond a single datasheet — giving procurement and engineering teams a single source of truth for the IRLML2803TRPBF.
IRLML5103TRPBF - 30V 760mA P-Channel MOSFET | Infineon
Infineon IRLML5103TRPBF is a P-channel power MOSFET rated for a maximum drain-source voltage of 30 V, a continuous drain current of 760 mA at the specified case condition, and power dissipation of 540 mW at the specified ambient condition. The part is supplied in the Micro3/SOT-23 surface-mount package, making it suitable for compact low-voltage switching and load-management circuits. Its P-channel polarity supports high-side switching when the source is connected toward the positive supply, allowing a simple gate-drive arrangement for many load-control applications. A P-channel MOSFET is a voltage-controlled majority-carrier device in which a negative gate-source voltage creates the conducting channel. It belongs to the power MOSFET hierarchy and is commonly used as a low-side or high-side switch, a load-disconnect device, or a reverse-polarity protection element. In a high-side configuration, the P-channel device can hold a load off or on with a relatively small gate-drive swing, but the gate voltage must be controlled carefully to avoid exceeding the device's gate rating. The verified specifications identify a maximum on-resistance of 600 mOhm and a gate charge of 3.4 nC according to the Mouser listing. The part is described as a P-channel 30 V, 760 mA device in a SOT-23 footprint. The Micro3/SOT-23 package is important for applications where board area is constrained, but its thermal capability must be considered when continuous dissipation approaches 540 mW. The device is also described as RoHS compliant in the supplied search data. IRLML5103TRPBF is based on IR MOSFET technology, and the supplied product-page information identifies a P-channel device with a maximum VDS of -30 V and maximum RDS(on) of 600 mOhm. Its low on-resistance can reduce conduction loss compared with a higher-resistance small-signal MOSFET, while the P-channel arrangement can simplify high-side load switching. The exact threshold voltage, safe operating area, transient current capability, and recommended gate-drive conditions are not included in the supplied verified data and therefore require datasheet review before final design release. Typical applications include battery-powered equipment, portable-device power management, load switching, power-path control, and protection or isolation circuits. The 30 V rating provides useful margin for common low-voltage rails, while the 760 mA rating makes the part appropriate for modest loads rather than high-current power conversion. A compact SOT-23 footprint supports space-constrained designs, but thermal performance, copper area, switching frequency, and gate-drive impedance remain important system-level considerations. When designing with IRLML5103TRPBF, confirm the actual load current, ambient temperature, gate-source voltage, and transient conditions against the manufacturer datasheet. Use a gate resistor and appropriate gate clamping or pulldown strategy where required, and calculate conduction loss from I²R using the verified 600 mOhm maximum on-resistance. Do not substitute a larger package or a different pinout without redesigning the PCB. This product page combines verified distributor specifications, the official Infineon datasheet link, package and pinout information, practical switching considerations, and same-package comparison guidance. It is intended to help engineers select the IRLML5103TRPBF while clearly separating verified values from parameters that still require datasheet confirmation.
IRLML6246TRPBF - 20V N-Channel HEXFET MOSFET | Infineon
The Infineon IRLML6246TRPBF is a 20V single N-channel HEXFET power MOSFET housed in an industry-standard Micro3/SOT-23 surface-mount package. It is rated for a continuous drain current of 4.1A (Ta) and a maximum power dissipation of 1.3W (Ta). According to the Infineon datasheet, the part uses the company's proprietary IR MOSFET silicon technology, achieving a typical on-resistance of 46 mOhm at VGS=4.5V and an ultra-low gate threshold suited to direct logic-level drive from 1.8V to 5V microcontrollers and battery-powered rails. The package footprint is the JEDEC-standard SOT-23 (also marketed as Micro3), making it pin-compatible with a broad cross-section of competitor parts. A power MOSFET is a voltage-controlled three-terminal semiconductor switch used to commutate current between drain and source under the control of a gate signal. Within the broader taxonomy, the IRLML6246 sits in the low-voltage (<=30V) logic-level N-channel enhancement-mode category, descended from power MOSFET -> discrete semiconductor -> transistor. Logic-level N-channel MOSFETs are particularly important in portable, battery, and USB-powered designs because they can be driven directly from low-voltage GPIO without a charge pump or gate driver. The IRLML6246 family is part of Infineon's HEXFET Power MOSFET portfolio, an industry-standard benchmark for efficiency and thermal performance in micro-packages. Key differentiating features include the 4.1A continuous drain current, 46 mOhm typical on-resistance, logic-level VGS(th) around 1.1V, and the industry-standard SOT-23 footprint. The part is halogen-free and fully RoHS compliant. The combination of a small SOT-23 outline, low Rds(on), and true logic-level drive enables designers to shrink load-switch, power-rail, and DC-DC synchronous-rectifier circuits that previously required a larger SO-8 or DPAK device. The device uses Infineon's IR MOSFET planar cell architecture, with the gate oxide and source metallization tuned for low gate charge (Qg) and fast switching transitions. This reduces both conduction and switching losses, which is critical in high-frequency synchronous rectification in buck converters and in PWM load-switch topologies where dead-time losses dominate. The SOT-23 package's exposed lead frame also helps wick heat into the PCB copper. Typical applications include load switching in smartphones and wearables, USB VBUS power distribution, battery protection / charging FETs in single-cell Li-ion packs, high-side load drivers in IoT sensor nodes, and synchronous-rectifier low-side FETs in tiny point-of-load buck converters. The logic-level gate makes the IRLML6246 a drop-in choice when 3.3V or 1.8V MCUs must directly drive a switch without a level shifter. When laying out the PCB, place the source tab land pattern to maximize copper pour and minimize thermal resistance; the SOT-23 dissipates only 1.3W at Ta=25C with the standard JEDEC footprint, so a 0.5 sq-inch copper pad is recommended at full load. Always observe the SOA at high currents, especially during inrush on highly capacitive loads such as USB VBUS hot-plug events. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the bare manufacturer datasheet, including cross-brand same-package equivalents and SOA-aware design guidance.
IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon
Infineon IRLML6346TRPBF is a 30V, 3.4A N-channel HEXFET power MOSFET housed in a compact Micro3 / SOT-23 surface-mount package. It combines an ultra-low on-resistance of 63 mOhm maximum at VGS=2.5V with a logic-level 2.5V drive capability, enabling direct interfacing with microcontrollers, low-voltage ASICs, and battery-powered digital logic. The part is supplied on tape-and-reel packaging, with the TRPBF suffix indicating Pb-free terminal finish. An N-channel enhancement-mode MOSFET is a three-terminal voltage-controlled switch in which a positive gate-to-source voltage creates an inversion layer that conducts current between drain and source. N-channel MOSFETs belong to the broader class of field-effect transistors (FETs) within discrete semiconductors, sitting beneath the hierarchy of power semiconductors, transistors, and ultimately semiconductor devices. Compared to P-shading equivalents, N-channel parts typically offer lower RDS(on) per unit silicon area, which is why they dominate low-voltage load-switch and power-ORing applications. Within the MOSFET taxonomy, the IRLML6346 sits in the low-voltage logic-level sub-30V segment optimised for battery and USB-rail switching. Key differentiating features of the IRLML6346TRPBF include 30V VDS maximum rating, 3.4A continuous drain current at TA=25C, 63 mOhm maximum RDS(on) at VGS=2.5V, and a 1.3W maximum power dissipation rating on a 1-inch square FR4 board. Its HEXFET power-MOSFET process technology is engineered for low gate charge and fast switching, making it well suited to high-frequency DC-DC converter synchronous-rectifier slots where dead‑second losses matter. The logic-level gate threshold also eliminates the need for a gate-driver IC in many 3.3V and 5V systems. Architecturally, the device uses Infineon's seventh-generation HEXFET die, integrating a planar cell structure with low-resistance source metallization. This produces low conduction loss at sub-1A loads and acceptable switching loss at 1-3A pulsed conditions. The device is rated for operation from -55C to +150C junction temperature, supporting industrial as well as consumer thermal envelopes. Typical applications for the IRLML6346TRPBF include battery protection and load switching in portable electronics, USB power-path management, DC-DC converter synchronous rectification, power-ORing circuits for redundant supplies, and small motor/relay drivers. The SOT-23 footprint also makes it suitable for high-density point-of-load regulators and discrete fan controllers where board area is constrained. When designing with this part, calculate worst-case power dissipation using P = I^2 x RDS(on) and verify that the resulting junction temperature rise stays below the 150C maximum. Use a gate series resistor of 10-100 Ohm to damp ringing, and place the device close to the controller to minimise gate-loop inductance. This page synthesizes Infineon datasheet specifications, real-time distributor pricing, drop-in SOT-23 alternatives, and practical thermal / PCB design guidance not found in the datasheet alone.
IRLR8726TRLPBF - 30V 86A N-Channel StrongIRFET™ MOSFET | Infineon
The Infineon IRLR8726TRLPBF is a 30V N-channel power MOSFET rated for 86A continuous drain current (Tc) in a TO-252AA (DPAK) surface-mount package, built on Infineon's StrongIRFET™ technology platform. Key headline parameters are 30V VDS max, 5.8 mΩ RDS(on) max, and 75W power dissipation (Tc), with a total gate charge of 15 nC that places it firmly in the logic-level, low-Qg category of mid-voltage trench MOSFETs. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or modulate current in power conversion circuits; N-channel devices such as the IRLR8726 family conduct between drain and source when a positive gate-to-source voltage is applied. The StrongIRFET™ family is engineered for low RDS(on) per unit area and high avalanche ruggedness, optimizing the trade-off between conduction loss and switching loss that defines the figure of merit (FOM) of a power switch. Distinguishing electrical characteristics include a logic-level VGS(th) that allows direct drive from 3.3V or 5V microcontrollers without a dedicated gate driver, 15 nC total gate charge enabling fast switching transitions, and a low 5.8 mΩ on-resistance that minimizes conduction losses even at the high currents encountered in motor drive and synchronous rectification. The DPAK package delivers these properties in a footprint familiar to industrial designers and supports wave or reflow soldering. Architecturally, the IRLR8726 uses a stripe-cell trench gate structure with an optimized P-body region to balance RDS(on), Qg, and avalanche energy. This gives it strong performance in both hard-switched topologies (Buck, Boost) and soft-switched applications, where the low FOM reduces switching losses that dominate at high frequency. Typical applications for the IRLR8726TRLPBF include BLDC and brushed DC motor control in cordless tools and e-bikes, low-voltage synchronous rectification in isolated DC-DC converters, high-current load switching in industrial automation, battery protection and OR-ing in 12V/24V systems, USB Power Delivery and quick-charge adapter switches, and Class-D audio amplifier output stages. The DPAK footprint makes it ideal where IPD-style integration is not desired and a discrete, thermally efficient part is preferred. When designing with this MOSFET, place the gate drive return (source Kelvin connection where possible) as close as possible to the source pad to minimize parasitic inductance, and verify that the SOA at the application's actual VDS and pulse duration stays within the datasheet envelope; at full rated current in DPAK, a copper area of at least 1 square inch is recommended for thermal relief. According to the Infineon datasheet, the part is RoHS compliant and rated for an operating junction temperature up to 175°C. This page combines manufacturer datasheet data, distributor pricing as of 2026-09-10, drop-in alternatives, and practical design notes that are not aggregated on a single distributor product page.
IRLR8726TRPBF - 30V 86A N-Channel StrongIRFET™ | Infineon
The Infineon IRLR8726TRPBF is an N-channel HEXFET power MOSFET rated for 30 V drain-to-source voltage, 86 A continuous drain current at case temperature, and 5.8 mΩ maximum on-resistance at VGS=10 V, packaged in a surface-mount TO-252AA (DPAK). It belongs to Infineon's StrongIRFET™ family, which is optimized for low RDS(on) and high-speed switching in 12 V and 24 V DC-bus systems. An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a positive gate-to-source voltage is applied, modulating a channel of electrons beneath the gate oxide. Power MOSFETs are the active switches used inside synchronous buck converters, half-bridge stages, eFuse blocks, hot-swap controllers, and motor-driver bridges, where they sit in the broader power-conversion hierarchy between the controller IC and the load. The DPAK (TO-252AA) is a single-die SMD package family descended from the through-hole TO-220, with a metal tab that doubles as the drain terminal and a heatsink mounting surface, enabling compact PCB designs that still dissipate tens of watts. Key features include a typical gate charge of 15 nC, low R_DS(on) of 5.8 mΩ, a 75 W power dissipation rating at Tc, and the standard StrongIRFET™ robust body-diode ruggedness for unclamped inductive switching. These parameters make the part especially well-suited to synchronous rectification, where switching loss and conduction loss both directly determine overall converter efficiency. The device uses Infineon's proven planar HEXFET process, providing a mature trade-off between RDS(on), gate charge, and avalanche ruggedness. The low 5.8 mΩ RDS(on) at 10 V VGS, combined with only 15 nC of gate charge, balances conduction and switching losses, enabling high-frequency operation without efficiency collapse. Typical applications include high-frequency synchronous buck converters for processor power, high-side switching in 12 V/24 V industrial systems, battery protection circuits in lithium-ion packs, USB-PD power-path management, and DC motor control in eMobility and robotic systems. When designing with this MOSFET, gate-drive strength must be sized to the 15 nC Qg - an under-driven gate causes slow turn-on and excessive switching loss. The exposed metal tab of the DPAK package must be soldered to the PCB copper pour to keep junction temperature within safe limits. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineering context for BOM selection and supply-chain decisions.
IRLU024NPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon
The Infineon IRLU024NPBF is a 55 V, 17 A single N-channel logic-level HEXFET power MOSFET in a through-hole IPAK (TO-251AA) package, optimized for 10 V gate drive and capable of 4.5 V gate drive. It is the through-hole (I-Pak) companion to the surface-mount IRLR024NPBF (D-Pak / TO-252AA), sharing the same silicon die and rated at 45 W power dissipation at 25 °C case temperature with a maximum on-resistance of 65 mΩ at VGS = 10 V. The "PBF" suffix confirms lead-free, RoHS-compliant termination plating per Infineon's industry-standard naming convention. A HEXFET power MOSFET is a specific class of N-channel enhancement-mode MOSFET built on International Rectifier's (now Infineon) HEXFET cell geometry, which uses a hexagonal cellular layout to maximize channel width per unit silicon area. This geometry produces very low on-resistance, high peak current capability, and rugged avalanche-rated switching behavior. The IRLU024NPBF is the logic-level variant of the 55 V family, meaning VGS(th) is reduced and the device can be fully enhanced at gate voltages compatible with 5 V microcontrollers, gate drivers, and TTL logic outputs - eliminating the need for a separate gate-drive supply in many low-side switch applications. Key specifications include a continuous drain current of 17 A at TC = 25 °C, pulsed drain current handling suitable for inrush and motor-start transients, an on-resistance of 0.065 Ω maximum, and a total gate charge of approximately 10 nC that enables fast switching at frequencies from DC to several hundred kHz. Thermal resistance junction-to-case is rated at 3.3 °C/W and junction-to-ambient at 110 °C/W (or 50 °C/W PCB-mounted per the datasheet), giving designers a clear thermal budget for heatsink selection. The device is qualified to JEDEC standards and operates over the industrial -55 °C to +175 °C junction temperature range. Typical applications include low-side switching in DC motor drives, solenoid and relay drivers, automotive 12 V load switching (fuel injectors, lamps, fans), power-OR'ing circuits, battery protection, synchronous-rectifier secondary-side switches, and high-efficiency DC-DC converter low-side FETs. Its logic-level gate and TO-251AA package make it especially suited for through-hole designs where thermal dissipation and mechanical ruggedness are required. When designing with this device, calculate worst-case conduction loss as ID² × RDS(on) and ensure TC stays below 150 °C using the datasheet thermal derating curve. For switching applications, add a small gate-source resistor (10-100 Ω) to suppress ringing and a flyback or snubber diode across inductive loads to clamp the drain transient below the 55 V VDS rating. This page synthesizes distributor pricing, drop-in IPAK alternatives, and practical thermal and gate-drive design guidance not found in the standalone datasheet PDF.