2ED2106S06FXUMA1 vs 2ED2108S06FXUMA1 比較
詳細並排比較 2ED2106S06FXUMA1 由 Infineon 與 2ED2108S06FXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 2ED2106S06FXUMA1 | 2ED2108S06FXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Offset Voltage (Voffset max) | 650 V | — |
| Configuration | High-Side and Low-Side (Half-Bridge) | — |
| Source Current (typ.) | 0.29 A | — |
| Sink Current (typ.) | 0.7 A | — |
| Input Logic Compatibility | CMOS, TTL | — |
| Propagation Delay (typ.) | 100 ns | [DATA_NEEDED: propagation delay ns] |
| 輸出數量 | 2 (1 high-side, 1 low-side) | 2 (high-side + low-side) |
| Number of Drivers | 2 | 1 |
| 腳位數 | 8 | — |
| 封裝 | PG-DSO-8-69 (DSO-8) | PG-DSO-8-53 (DSO-8) |
| 安裝類型 | Surface Mount | Surface Mount |
| Bootstrap Diode | Integrated | — |
| 工作溫度範圍 | -40C to +125C | — |
| Packaging | Tape & Reel | — |
| 輸出類型 | Half-Bridge, Non-Inverting | — |
| Driver Configuration | — | Half-Bridge |
| Gate Type | — | N-Channel MOSFET, IGBT |
| Logic Input | — | Non-Inverting |
| Input Voltage (VCC) | — | 10 V to 20 V |
| High-Side Bootstrap Voltage Rating | — | 650 V |
| Peak Source Current (typ.) | — | 0.29 A |
| Peak Sink Current (typ.) | — | 0.7 A |
| Integrated Bootstrap Diode | — | Yes |
| Undervoltage Lockout (UVLO) | — | Yes (VCC and VB) |
| Rise / Fall Time (typ.) | — | [DATA_NEEDED: tr/tf ns] |
| 工作溫度 | — | -40 C to +125 C |
| MSL 等級 | — | 1 |
| RoHS 狀態 | — | Compliant |