2ED2106S06FXUMA1 vs 2ED2108S06FXUMA1 Perbandingan

Perbandingan bersamaan detil 2ED2106S06FXUMA1 dari Infineon dan 2ED2108S06FXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED2106S06FXUMA1 2ED2108S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility CMOS, TTL —
Propagation Delay (typ.) 100 ns [DATA_NEEDED: propagation delay ns]
Jumlah Output 2 (1 high-side, 1 low-side) 2 (high-side + low-side)
Number of Drivers 2 1
Jumlah Pin 8 —
Paket PG-DSO-8-69 (DSO-8) PG-DSO-8-53 (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Bootstrap Diode Integrated —
Rentang Suhu Kerja -40C to +125C —
Packaging Tape & Reel —
Tipe Output Half-Bridge, Non-Inverting —
Driver Configuration — Half-Bridge
Gate Type — N-Channel MOSFET, IGBT
Logic Input — Non-Inverting
Input Voltage (VCC) — 10 V to 20 V
High-Side Bootstrap Voltage Rating — 650 V
Peak Source Current (typ.) — 0.29 A
Peak Sink Current (typ.) — 0.7 A
Integrated Bootstrap Diode — Yes
Undervoltage Lockout (UVLO) — Yes (VCC and VB)
Rise / Fall Time (typ.) — [DATA_NEEDED: tr/tf ns]
Suhu Kerja — -40 C to +125 C
Level MSL — 1
Status RoHS — Compliant

Spek dan Sumber

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