2EDL8034G4CXTMA1 vs 2ED2103S06FXUMA1 Perbandingan

Perbandingan bersamaan detil 2EDL8034G4CXTMA1 dari Infineon dan 2ED2103S06FXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDL8034G4CXTMA1 2ED2103S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Half-Bridge (High-Side / Low-Side) —
Configuration Non-Inverting Non-Inverting
Bootstrap Voltage (Max) 120 V 675 V
Peak Source Current 3 A —
Peak Sink Current 4 A —
Jumlah Output 2 —
Rise Time (Typical) [DATA_NEEDED: rise time ns] —
Fall Time (Typical) [DATA_NEEDED: fall time ns] —
Propagation Delay (Typical) [DATA_NEEDED: propagation delay ns] —
Input Logic Compatibility 3.3 V / 5 V —
VCC Supply Voltage [DATA_NEEDED: VCC range V] —
UVLO Protection Yes (VCC and VBS) —
Isolation Type Junction-isolated (level-shifted) —
ESD Rating (HBM) [DATA_NEEDED: ESD HBM kV] —
Suhu Hubung Kerja -40 C to +125 C —
Paket PG-VDSON-10-2 (DSN-10) with exposed pad PG-DSO-8-69 (DSO-8 with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Lead-Free / RoHS Yes (per Infineon product page) —
Level MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Fungsi — Half-Bridge Gate Driver
Technology — High-Voltage Level Shift (SOI)
Number of Drivers — 2 (high-side + low-side)
Driven Device Type — IGBT, N-Channel MOSFET
High-Side Offset Voltage (Max) — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Bootstrap Diode — Integrated
Logic Input Compatibility — 3.3 V / 5 V
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Rentang Suhu Kerja — -40C to +125C
Status RoHS — Compliant

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