2EDL8034G4CXTMA1 vs 2ED2103S06FXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2EDL8034G4CXTMA1 disebabkan oleh Infineon dan 2ED2103S06FXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2EDL8034G4CXTMA1 2ED2103S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Half-Bridge (High-Side / Low-Side) —
Configuration Non-Inverting Non-Inverting
Bootstrap Voltage (Max) 120 V 675 V
Peak Source Current 3 A —
Peak Sink Current 4 A —
Bilangan Output 2 —
Rise Time (Typical) [DATA_NEEDED: rise time ns] —
Fall Time (Typical) [DATA_NEEDED: fall time ns] —
Propagation Delay (Typical) [DATA_NEEDED: propagation delay ns] —
Input Logic Compatibility 3.3 V / 5 V —
VCC Supply Voltage [DATA_NEEDED: VCC range V] —
UVLO Protection Yes (VCC and VBS) —
Isolation Type Junction-isolated (level-shifted) —
ESD Rating (HBM) [DATA_NEEDED: ESD HBM kV] —
Suhu Hubungan Operasi -40 C to +125 C —
Kemasan PG-VDSON-10-2 (DSN-10) with exposed pad PG-DSO-8-69 (DSO-8 with exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / RoHS Yes (per Infineon product page) —
Aras MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Fungsi — Half-Bridge Gate Driver
Technology — High-Voltage Level Shift (SOI)
Number of Drivers — 2 (high-side + low-side)
Driven Device Type — IGBT, N-Channel MOSFET
High-Side Offset Voltage (Max) — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Bootstrap Diode — Integrated
Logic Input Compatibility — 3.3 V / 5 V
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Gambaran Suhu Operasi — -40C to +125C
Status RoHS — Compliant

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