BSD235CH6327XTSA1 vs BSR802NL6327HTSA1 Comparison

Detailed side-by-side comparison of BSD235CH6327XTSA1 by Infineon and BSR802NL6327HTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSD235CH6327XTSA1

BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOSβ„’

BSD235CH6327XTSA1 βœ“ Active
Infineon
BSR802NL6327HTSA1

BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon

BSR802NL6327HTSA1 βœ“ Active

Specification Comparison

Parameter BSD235CH6327XTSA1 BSR802NL6327HTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.12 $0.15
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOSβ„’ β€”
Configuration N+P complementary dual MOSFET β€”
Drain-to-Source Voltage (VDS) 20 V β€”
N-Channel Continuous Drain Current (ID) 950 mA β€”
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) β€”
Total Power Dissipation (Ptot) 500 mW β€”
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) β€”
Mounting Type Surface Mount Surface Mount
Technology OptiMOSβ„’ low-voltage OptiMOS 2 (N-Channel Trench MOSFET)
Operating Temperature Range -55 Β°C to +150 Β°C (junction) β€”
Polarity N-channel + P-channel β€”
Channel Mode Enhancement β€”
RoHS Status Compliant (lead-free) Compliant
MSL Level 1 β€”
Pin Count 6 3
Part Number β€” BSR802NL6327HTSA1
Channel Type β€” N-Channel
Drain-Source Voltage (VDS) max β€” 20 V
Continuous Drain Current (ID) max β€” 3.7 A (Ta=25C)
Power Dissipation (PD) max β€” 500 mW (Ta=25C)
On-Resistance (RDS(on)) typ β€” 23 mOhm @ VGS=4.5 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Package β€” PG-SC59-3 (SC-59 / SOT-346)
Operating Junction Temperature β€” -55C to +150C
Qualification β€” Automotive

Datasheets & Resources

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