BSD235CH6327XTSA1 vs BSR802NL6327HTSA1 Comparison
Detailed side-by-side comparison of BSD235CH6327XTSA1 by Infineon and BSR802NL6327HTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ Active
Specification Comparison
| Parameter | BSD235CH6327XTSA1 | BSR802NL6327HTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS™ | — |
| Configuration | N+P complementary dual MOSFET | — |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 950 mA | — |
| P-Channel Continuous Drain Current (ID) | 530 mA (negative polarity) | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Package Type | PG-SOT363-6-1 (SOT-363, 6-pin) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS™ low-voltage | OptiMOS 2 (N-Channel Trench MOSFET) |
| Operating Temperature Range | -55 °C to +150 °C (junction) | — |
| Polarity | N-channel + P-channel | — |
| Channel Mode | Enhancement | — |
| RoHS Status | Compliant (lead-free) | Compliant |
| MSL Level | 1 | — |
| Pin Count | 6 | 3 |
| Part Number | — | BSR802NL6327HTSA1 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 20 V |
| Continuous Drain Current (ID) max | — | 3.7 A (Ta=25C) |
| Power Dissipation (PD) max | — | 500 mW (Ta=25C) |
| On-Resistance (RDS(on)) typ | — | 23 mOhm @ VGS=4.5 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Package | — | PG-SC59-3 (SC-59 / SOT-346) |
| Operating Junction Temperature | — | -55C to +150C |
| Qualification | — | Automotive |