BSD235CH6327XTSA1 vs BSR802NL6327HTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSD235CH6327XTSA1 disebabkan oleh Infineon dan BSR802NL6327HTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSD235CH6327XTSA1 BSR802NL6327HTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET —
Drain-to-Source Voltage (VDS) 20 V —
N-Channel Continuous Drain Current (ID) 950 mA —
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) —
Total Power Dissipation (Ptot) 500 mW —
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS™ low-voltage OptiMOS 2 (N-Channel Trench MOSFET)
Gambaran Suhu Operasi -55 °C to +150 °C (junction) —
Polarity N-channel + P-channel —
Channel Mode Enhancement —
Status RoHS Compliant (lead-free) Compliant
Aras MSL 1 —
Kiraan Pin 6 3
Part Number — BSR802NL6327HTSA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 20 V
Continuous Drain Current (ID) max — 3.7 A (Ta=25C)
Power Dissipation (PD) max — 500 mW (Ta=25C)
On-Resistance (RDS(on)) typ — 23 mOhm @ VGS=4.5 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Kemasan — PG-SC59-3 (SC-59 / SOT-346)
Suhu Hubungan Operasi — -55C to +150C
Qualification — Automotive

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