BSD235CH6327XTSA1 vs BSR802NL6327HTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSD235CH6327XTSA1 sa pamamagitan ng Infineon at BSR802NL6327HTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSR802NL6327HTSA1 BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon

BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon

BSR802NL6327HTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSD235CH6327XTSA1 BSR802NL6327HTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET —
Drain-to-Source Voltage (VDS) 20 V —
N-Channel Continuous Drain Current (ID) 950 mA —
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) —
Total Power Dissipation (Ptot) 500 mW —
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS™ low-voltage OptiMOS 2 (N-Channel Trench MOSFET)
Hanay ng Temperature na Operasyon -55 °C to +150 °C (junction) —
Polarity N-channel + P-channel —
Channel Mode Enhancement —
Tindminan RoHS Compliant (lead-free) Compliant
Level ng MSL 1 —
Bilang ng Pin 6 3
Part Number — BSR802NL6327HTSA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 20 V
Continuous Drain Current (ID) max — 3.7 A (Ta=25C)
Power Dissipation (PD) max — 500 mW (Ta=25C)
On-Resistance (RDS(on)) typ — 23 mOhm @ VGS=4.5 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Packhaging — PG-SC59-3 (SC-59 / SOT-346)
Temperature ng Junction na Operasyon — -55C to +150C
Qualification — Automotive

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