BSD235CH6327XTSA1 vs BSR802NL6327HTSA1 Perbandingan
Perbandingan bersamaan detil BSD235CH6327XTSA1 dari Infineon dan BSR802NL6327HTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | BSD235CH6327XTSA1 | BSR802NL6327HTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS™ | — |
| Configuration | N+P complementary dual MOSFET | — |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 950 mA | — |
| P-Channel Continuous Drain Current (ID) | 530 mA (negative polarity) | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Package Type | PG-SOT363-6-1 (SOT-363, 6-pin) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS™ low-voltage | OptiMOS 2 (N-Channel Trench MOSFET) |
| Rentang Suhu Kerja | -55 °C to +150 °C (junction) | — |
| Polarity | N-channel + P-channel | — |
| Channel Mode | Enhancement | — |
| Status RoHS | Compliant (lead-free) | Compliant |
| Level MSL | 1 | — |
| Jumlah Pin | 6 | 3 |
| Part Number | — | BSR802NL6327HTSA1 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 20 V |
| Continuous Drain Current (ID) max | — | 3.7 A (Ta=25C) |
| Power Dissipation (PD) max | — | 500 mW (Ta=25C) |
| On-Resistance (RDS(on)) typ | — | 23 mOhm @ VGS=4.5 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Paket | — | PG-SC59-3 (SC-59 / SOT-346) |
| Suhu Hubung Kerja | — | -55C to +150C |
| Qualification | — | Automotive |