FDS6575 vs IRF7351TRPBF 比較

詳細並排比較 FDS6575 由 onsemi 與 IRF7351TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 FDS6575 IRF7351TRPBF
品牌 onsemi Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel —
Drain-Source Voltage (VDS) -20 V 60 V
Continuous Drain Current (ID) -10 A 8 A
On-Resistance (RDS(on)) 13 mOhm max at VGS = -4.5 V —
Gate Drive Voltage Range 2.5 V to 8 V —
閘極臨界電壓 [DATA_NEEDED: gate threshold voltage range] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] 24 nC
Technology PowerTrench (rugged gate) IR MOSFET (HEXFET trench)
封裝 SOIC-8 (SO-8) 8-SO (SO-8 / SOIC-8) Surface Mount
安裝類型 Surface Mount Surface Mount
Power Dissipation [DATA_NEEDED: power dissipation at TA] —
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
Configuration Single MOSFET Dual N-Channel MOSFET (Half-Bridge)
Gate Source Voltage (VGS) Range [DATA_NEEDED: VGS max rating] —
RoHS 狀態 Compliant Compliant (PBF suffix = lead-free)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF7351TRPBF
On-Resistance RDS(on) max — 17.8 mOhm
On-Resistance RDS(on) typ (per digchips) — 0.0137 ohm (13.7 mOhm)
Power Dissipation (PD) — 2 W
工作溫度 — -55C to +150C (junction)
Typical Application — Synchronous Rectifier for Isolated DC-DC Converters
Lead-Free — Yes
MSL 等級 — [DATA_NEEDED: MSL Level]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]

資料表與資源

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