H5AN8G6NAFR vs K4A8G165WB-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NAFR disebabkan oleh SK hynix dan K4A8G165WB-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ AktifPengandingan Spesifikasi
| Parametr | H5AN8G6NAFR | K4A8G165WB-BCWE |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $6.25 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | — |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Kadar Data | 2400 MT/s | 3200 Mbps/pin |
| Kemasan | 96-ball FBGA | 96FBGA |
| Suhu Operasi | 0°C to +85°C | 0C to +85C |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| RoHS Compliant | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Dynamic ODT | Yes | — |
| ZQ Calibration | Yes | — |
| CRC | Yes | — |
| Write Leveling | Yes | — |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Access Time | — | 19 ns |
| Antaramuka | — | Parallel |
| Jenis Pemasangan | — | Surface Mount |
| Memory Format | — | DRAM (volatile) |
| Technology | — | DDR4 SDRAM B-die |
| Prefetch | — | 8n |
| Refresh | — | Self-refresh supported |
| Termination | — | On-die termination (ODT) |
| Status RoHS | — | [DATA_NEEDED: RoHS compliance statement] |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |