H5TC4G63AFR-PBI vs K4B4G1646E-BYMA Comparison

Detailed side-by-side comparison of H5TC4G63AFR-PBI by SK hynix and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5TC4G63AFR-PBI

H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI Obsolete
Samsung Electronics
K4B4G1646E-BYMA K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA βœ“ Active

Specification Comparison

Parameter H5TC4G63AFR-PBI K4B4G1646E-BYMA
Brand SK hynix Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Obsolete Active
Stock Status In Stock In Stock
Unit Price (USD) $6.50 $14.32
Memory Type DDR3L SDRAM DDR3L SDRAM
Organization 256M x 16 256M x 16
Total Memory Size 4 Gb β€”
Data Rate DDR3-1600 (PC3L-12800) 1866 Mbps/pin
Supply Voltage 1.35 V 1.35 V (1.28 V to 1.575 V)
Number of Banks 8 β€”
Burst Length 8 (BL8) [DATA_NEEDED: Burst Length]
CAS Latency Programmable [DATA_NEEDED: CAS Latency]
On-Die Termination (ODT) Yes β€”
Refresh Period 7.8 us at 85Β°C β€”
Operating Temperature Range -40Β°C to +95Β°C β€”
Package 96-ball FBGA (TFBGA, BGA96, 9x16, 32) FBGA-96
Mounting Type Surface Mount Surface Mount
Number of Terminals 96 β€”
RoHS Status Compliant β€”
Density β€” 4 Gb
Clock Frequency β€” 933 MHz
Operating Temperature β€” 0Β°C to +95Β°C
Operating Current β€” 14 mA
Standby Current β€” 2 mA, 3 mA
RoHS β€” Compliant
Number of Pins β€” 96

Datasheets & Resources

Browse All Products Create BOM Request Quote