H5TC4G63AFR-PBI vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of H5TC4G63AFR-PBI by SK hynix and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5TC4G63AFR-PBI | K4B4G1646E-BYMA |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Obsolete | Active |
| Unit Price (USD) | — | $14.32 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Organization | 256M x 16 | 256M x 16 |
| Total Memory Size | 4 Gb | — |
| Data Rate | DDR3-1600 (PC3L-12800) | 1866 Mbps/pin |
| Supply Voltage | 1.35 V | 1.35 V (1.28 V to 1.575 V) |
| Number of Banks | 8 | — |
| Burst Length | 8 (BL8) | [DATA_NEEDED: Burst Length] |
| CAS Latency | Programmable | [DATA_NEEDED: CAS Latency] |
| On-Die Termination (ODT) | Yes | — |
| Refresh Period | 7.8 us at 85°C | — |
| Operating Temperature Range | -40°C to +95°C | — |
| Package | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Terminals | 96 | — |
| RoHS Status | Compliant | — |
| Density | — | 4 Gb |
| Clock Frequency | — | 933 MHz |
| Operating Temperature | — | 0°C to +95°C |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| RoHS | — | Compliant |
| Number of Pins | — | 96 |